A5037437172- Advanced ceramic materials synthesis
- Advanced materials and composites
- Metal and Thin Film Mechanics
- High-Temperature Coating Behaviors
- High Entropy Alloys Studies
- Silicon and Solar Cell Technologies
- Additive Manufacturing Materials and Processes
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Aluminum Alloys Composites Properties
- MXene and MAX Phase Materials
- Nuclear materials and radiation effects
- Force Microscopy Techniques and Applications
- Nuclear Physics and Applications
- Intermetallics and Advanced Alloy Properties
- Non-Destructive Testing Techniques
- Glass properties and applications
- Metal Alloys Wear and Properties
- Titanium Alloys Microstructure and Properties
- Powder Metallurgy Techniques and Materials
- Laser-Ablation Synthesis of Nanoparticles
- Ferroelectric and Piezoelectric Materials
- NMR spectroscopy and applications
- Microwave Dielectric Ceramics Synthesis
- Recycling and utilization of industrial and municipal waste in materials production
KU Leuven
2008-2018
National Institute of Technology Raipur
2014
University of the Witwatersrand
2011
The vibrational properties of single crystal Si and Ge are studied between room melting temperature T m using the impulse excitation technique. From measurements, dependent Young’s moduli E <ijk> extracted in <100>-, <110>- <111>- directions. For both semiconductors, decrease smoothly with increasing retain high values up to . Using semi-empiric Wachtman's equation allows an excellent fit experimental data for dependence <100> , <110> <111> 0.6 ,....
Abstract Stress induced by the thermal gradients near meltsolid interface affects intrinsic point defect properties and quality of single crystal Si grown from a melt. Also during device processing, stress in substrate influences behavior treatments. To be able to simulate control distribution one needs know elastic constants at high temperatures. In present study, vibrational samples are studied between room melt temperature using impulse excitation technique. From measurements, dependent...
The model developed by Makishima and Mackenzie (M–M) may yield reasonable estimates for the E‐modulus of a range glasses. In M–M bonding enthalpy packing densities present in compounds that form glass are taken as input calculation. This study shows more accurate estimate can be obtained incorporating structural information from MAS ‐ NMR data. Specifically, we have determined means impulse excitation technique (IET) ionomer glasses with composition 4.5 SiO 2 –3 Al O 3 –1.5 P 5 MO –2 MF ,...
In this study, the phase evolution and properties of CoCrCuFeNiSix (x = 0, 0.3, 0.6 0.9 atomic ratios) high entropy alloys prepared by powder metallurgy route is investigated. The x-ray diffraction analysis reveals presence mixed phases face-centered body-centered cubic after 20 h milling. addition Si (0.3, 0.9) favors formation structure during mechanical alloying. However, heating spark plasma sintering encourages transformation evolved alloying to sigma phases. microhardness value...
The Impulse Excitation Technique (IET) is a non-destructive technique for evaluation of the elastic and damping properties materials. This based on mechanical excitation solid body by means light impact. For isotropic, homogeneous materials simple geometry (prismatic or cylindrical bars), resonant frequency free vibration provides information about Moreover, amplitude decay related to internal friction material. At present, IET well-established calculation moduli in monolithic, isotropic...
Abstract In the present study, vibrational properties of single crystal Ge samples are studied between room and melt‐ing temperature using impulse excitation technique (IET). From IET measurements, dependent Young's moduli Eijk extracted in (100), (110) (111) crystallographic directions inert atmosphere. The results show an anomalous softening elastic constant around 890 °C during measure‐ment. values 88 to 132 GPa obtained close melting temperature, depending on direction. Empiric...
1. Introduction . Mechanical and thermal stresses play an important role in many of the processes used to produce electronic devices. For example, bulk Si Ge single crystals are grown from a melt. Near melt/solid interface high develop that can lead dislocation formation loss crystal. As recently demonstrated, also stress levels below yield have impact on intrinsic point defect cluster crystal [1,2]. It is therefore surprising few reports be found Young's modulus E at temperatures [3]. In...