A5072274041- Photonic Crystal and Fiber Optics
- Advanced Fiber Optic Sensors
- Semiconductor Quantum Structures and Devices
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Multiferroics and related materials
- Magnetic and transport properties of perovskites and related materials
- Photonic and Optical Devices
- Optical Systems and Laser Technology
- Optical Network Technologies
- Perovskite Materials and Applications
- Advanced Condensed Matter Physics
Chinese Academy of Sciences
2007-2024
Shanghai Institute of Optics and Fine Mechanics
2023-2024
Nanjing University
2006-2007
International Centre for Materials Physics
2007
Institute of Semiconductors
2001-2006
State Key Laboratory on Integrated Optoelectronics
2006
The dependence of magnetotransport behaviors on $A$-site disorder induced by cational size mismatch in ferromagnetic manganites is investigated characterizing a series samples with the same mean radius $⟨{r}_{A}⟩=1.20\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}}$ but different ionic radii variance ${\ensuremath{\sigma}}^{2}={\ensuremath{\sum}}_{i}{x}_{i}{r}_{i}^{2}\ensuremath{-}{⟨{r}_{A}⟩}^{2}$, where ${x}_{i}$ and ${r}_{i}$ are atomic fraction $i$-type ions at $A$-site, respectively. It...
Perovskite-type polycrystalline La1∕3Sr2∕3FeO3 particles with different sizes (80–2000nm) were prepared using a simple sol-gel technique. In samples of nanoparticles diameter less than 300nm, weak ferromagnetism was observed at room temperature, which attributed to the lattice distortion. The magnetic and specific heat measurements suggest that charge ordering state largely suppressed due lowering particle size, but temperature remained unaffected.
Hollow core photonic bandgap fiber (HC-PBGF) has potential in the application of optics gyroscopes (FOGs) for its properties low nonlinearity, and excellent environmental adaptability.However, due to structural complexity, HC-PBGF is prone defects during fabrication process, which will cause degradation longitude uniformity optical fiber.The longitudinal non-uniformity structure limits preparation length HC-PBGF, while high-precision FOGs need be made with long-distance high-performance...
A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure, which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get large 3dB bandwidth due different strain introduced into the layer. more than 40nm, 65nm has been obtained in experiment theory, respectively. characteristics such polarization insensitive structure have...
The narrow stripe selective growth of the InGaAlAs bulk waveguides and MQW was first investigated. Flat clear interfaces were obtained for selectively grown under optimized conditions. These covered by specific InP layers, which can keep from being oxidized during fabrication devices. PL peak wavelength shifts 70 nm 73 with a small mask width varying 0 to 40 μm, interpreted in considering both migration effect masked region (MMR) lateral vapor diffusion (LVD). quality confirmed...
Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the bulk and MQW were successful grown on patterned substrates at optimized growth conditions. The mask width varied from 0 to 40 mum, while window region between a pair stripes was fixed 2.5 mum. These selectively covered specific InP layers, which can keep being oxidized during fabrication devices. In particular, there exhibit strong dependences photoluminescence (PL) spectrum for samples....