A5046891270- Semiconductor Lasers and Optical Devices
- Spectroscopy and Laser Applications
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Photonic and Optical Devices
- Ga2O3 and related materials
- Advanced Fiber Laser Technologies
Qufu Normal University
2023
Shanghai Institute of Microsystem and Information Technology
2011
Chinese Academy of Sciences
2011
Arizona State University
2008
This work reports on InAs/In0.53Ga0.47As strain compensated quantum well structures InP-based metamorphic buffer to generate the type-I emission of beyond 3 μm. The is composed InxAl1−xAs graded layer and In0.8Ga0.2As virtual substrate layer. Atomic force microscope, transmission electron microscope x-ray diffraction measurements show moderate surface structural properties. A photoluminescence signal up 3.05 μm has been achieved at 300 K, which one longest wavelengths from interband...
InAs/InGaAs quantum well laser structures have been grown on InP-based metamorphic In0.8Al0.2As buffers by gas source molecular beam epitaxy. The effects of barrier and waveguide layers the material qualities device performances were characterized. X-ray diffraction photoluminescence measurements prove benefits strain compensation in active region quality. characteristics lasers with different reveal that separate confinement heterostructure plays a crucial role these lasers. Type-I...
Control over the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is crucial for their practical applications current semiconducting devices. However, oxide surface structures inducing 2DEG are still ambiguous because oxide-stoichiometry (OS) matching possess occupied donor states at 1.0-1.8 eV below conduction band minimum of bulk but usually not available energy than counting (EC) rule structures. In this work, a global optimization algorithm was introduced to explore...
Theoretical calculations of the mode characteristics an equilateral-triangle resonator (ETR) with a 10μm cavity side length show that fundamental mode, longitudinal index 25, has wavelength 2.185μm and separation 100nm. This quality factor (∼2×105) is much larger than first (∼5×104) second (∼3×104) order modes, indicating single lasing should be accessible over broad tuning range. An electrically injected ETR based on this design fabricated from InGaAsSb∕AlGaAsSb∕GaSb, graded-index...