A5011263170- Perovskite Materials and Applications
- Nanowire Synthesis and Applications
- Solid-state spectroscopy and crystallography
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Photorefractive and Nonlinear Optics
- Crystal Structures and Properties
- Silicon Nanostructures and Photoluminescence
- Luminescence Properties of Advanced Materials
- Conducting polymers and applications
- Chalcogenide Semiconductor Thin Films
Korea Advanced Institute of Science and Technology
2023-2024
A novel method, named “selective reactivity-assisted sacrificial additive coating”, allowed the BF 4 − from to react selectively with Cs + perovskite, forming CsBF passivate A-site vacancy on surface.
Mixed–halide perovskites have emerged as a promising candidate for optoelectronics, due to their tunable optical properties. However, photoinduced phase segregation remains an obstacle stable performance in solar cells. Here, we conducted both bulk and nanoscale measurements elucidate the mechanism of halide ion migration that leads segregation. By utilizing Kelvin probe force microscopy (KPFM) under illumination, observed time-evolution from grain boundaries agreed with photoluminescence...
Tunnel-oxide-passivated contact on a crystalline Si improves the photovoltage of photoelectrode to reach 640–650 mV even after high-temperature process up 600 °C, which makes it useful as bottom cell monolithic tandem device.