A5061185361- Solidification and crystal growth phenomena
- Semiconductor Quantum Structures and Devices
- Metallurgical Processes and Thermodynamics
- Advanced Semiconductor Detectors and Materials
- Rheology and Fluid Dynamics Studies
- Fluid Dynamics and Turbulent Flows
- Fluid Dynamics and Thin Films
- Semiconductor materials and devices
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- ZnO doping and properties
- Heat and Mass Transfer in Porous Media
- Thin-Film Transistor Technologies
- Advanced Photocatalysis Techniques
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Terahertz technology and applications
- Machine Learning in Materials Science
- Electronic and Structural Properties of Oxides
- Phase Change Materials Research
- Aluminum Alloy Microstructure Properties
- GaN-based semiconductor devices and materials
Solid State Physics Laboratory
1983-2024
Indian Institute of Technology Delhi
2014-2019
Defence Research and Development Organisation
2018
β‐Ga 2 O 3 is one of the most promising wide‐bandgap materials for optoelectronic applications as well a conducting substrate GaN‐based device technologies. Single crystals undoped are grown by optical floating zone technique utilizing compressed dry air growth atmosphere. The properties highly anisotropic. Optimization processing recipe wafers along different orientations suitable development conducted. Structural, optical, and electrical determined. Efforts made to fabricate Schottky...
Electron transport properties of the 2-dimensional electron gas (2DEG) in Al<sub>0.3</sub>Ga<sub>0.</sub>7 N/AlN/GaN High Mobility Transistor (HEMT) grown on Fe doped GaN template was investigated (a) experimentally using temperature dependent Hall measurements and (b) theoretically by taking into consideration different scattering mechanisms like polar optical phonon, dislocation interface roughness etc. The HEMT structure exhibited very high mobilities ~1700 cm<sup>2</sup> /V s at room...
Turbulent characteristics of Czochralski melt flow are presented using the unsteady Reynolds-averaged Navier–Stokes (URANS) turbulence modeling approach. Three-dimensional, transient computations were performed Launder and Sharma low-Re k-ε model Menter shear stress transport (SST) k-ω on an idealized setup with counterrotating crystal crucible. A comparative assessment is between these two (RANS) models in capturing turbulent thermal behaviors. It was observed that SST predicted a better...
A comparative assessment is performed between purely porous formulation of the mushy zone controlled by permeability and hybrid formulations both viscosity during solidification a binary alloy.The Darcy's Carman-Kozeny equation used to model in for all models.The first employs switching functions simultaneously control up critical solid fraction thereafter it switches formulation.The second assumes be non-newtonian slurry with liquid following power law medium thereafter.A twodimensional...