A5101991739- Semiconductor Lasers and Optical Devices
- Advancements in PLL and VCO Technologies
- Radio Frequency Integrated Circuit Design
- Photonic and Optical Devices
- VLSI and Analog Circuit Testing
- Semiconductor materials and devices
Hubei University of Technology
2023
Texas Instruments (United States)
2002-2004
In this article, an industry leading 21 mask count 90nm CMOS SoC technology with integrated RF, analog, dense memory, low power or high-speed logic, and high-voltage DEMOS options is demonstrated. RF analog characteristics high on-chip voltage capability enable single chip radio design as well many additional applications.
A new SiGe integration technique is introduced that allows the low cost of a self-aligned 65 GHz heterojunction bipolar transistor (HBT) with 0.55dB noise figure (NF) using simple processing steps and non-selective epitaxy deposition. The presented as part 0.25/spl mu/m production RF technology includes NPNs, 14GHz PNPs, very high Q passives, resistance substrates, drain-extended CMOS (DEMOS) fully isolated wells. In addition to component characterization, measurements fabricated WCDMA...
As electronic products are updated, chips need to be constantly optimized for design, and the ring oscillator is one of essential structures. By studying area, power consumption other elements, best design solution meet relevant performance investigated. It plays a role in promoting development chip industry. In this paper, we first model frequency area it. The optimal size obtained, then design. relationship between energy number inverters analyzed by principle, an integer programming...