A5102802796- Ga2O3 and related materials
- Perovskite Materials and Applications
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Dielectric materials and actuators
- Phase Change Materials Research
- Advanced Thermoelectric Materials and Devices
- GaN-based semiconductor devices and materials
- Solid-state spectroscopy and crystallography
- Quantum Dots Synthesis And Properties
- Innovative Energy Harvesting Technologies
- Solar-Powered Water Purification Methods
- Advanced Sensor and Energy Harvesting Materials
- Plasmonic and Surface Plasmon Research
- Gold and Silver Nanoparticles Synthesis and Applications
- Photocathodes and Microchannel Plates
- Orbital Angular Momentum in Optics
Indian Institute of Technology Bombay
2022-2024
The Ohio State University
2023
Okinawa Institute of Science and Technology Graduate University
2015
Dark current is considered as one of the important parameters to suppress temporal noise and enhance sensitivity photodetectors. This study shows effect active layer thickness different interfacial layers in suppression leakage current. High-sensitivity (D* > 1012 Jones) perovskite photodetectors (PPDs) are fabricated using device structure ITO/PEDOT: PSS/FA0.95Cs0.05PbI3 (dPVSK)/ electron transport (ETL)/BCP/Ag with <1 pA Hz−½. These PPDs have a broadband response from...
With the growing demand and environmental concerns regarding applied electronic materials, a shift toward lead-free piezoelectric materials has been seen since past decade. Polyvinylene difluoride (PVDF) serves as ultralight-weight polymer for flexible self-powered sensors actuators; however, it suffers from low energy harvesting efficiency (10–12 V maximum output at typical pressure in range of 10–20 N/cm2 pure PVDF) due to dominance nonpolar alpha (α) phase. In this work, we developed...
We study the optical properties of hybrid gold nanodisk and nanohole arrays present experimental evidence nanoparticle trapping using these devices. The fabrication procedure electron beam lithography (EBL) is also discussed. This design exhibits a splitting resonance modes (low high energy modes) due to coupling electromagnetic interaction between plasmons. devices demonstrate plasmon tunabilities from visible near-infrared region (NIR) by varying dimensions features this design....
Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes to eliminate the challenges posed by conventional mesa diodes. An alternate way fabricate using atomic layer deposited ZnO was explored effect of diffusion process on studied X-ray diffraction. The optimum conditions were then make diffused Zn concentration...
Fabrication and systematic characterization of GaN/Si(111)-based visible-blind ultraviolet photodetectors, with Pt/Au contacts, is reported. We demonstrate a record-high detectivity 4.93x10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">14</sup> Jones, for bias voltages exceeding V <inf xmlns:xlink="http://www.w3.org/1999/xlink">B</inf> = 14 V. The high obtained due to extremely low dark current (~ pA, even 40 V), responsivity, in the...