A5087208066- X-ray Diffraction in Crystallography
- Ferroelectric and Negative Capacitance Devices
- Crystallization and Solubility Studies
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Maritime Navigation and Safety
- Advanced Memory and Neural Computing
- Gold and Silver Nanoparticles Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Robotic Path Planning Algorithms
- Quantum Dots Synthesis And Properties
- Advanced biosensing and bioanalysis techniques
- Semiconductor materials and interfaces
- Metal and Thin Film Mechanics
- Advanced Measurement and Detection Methods
The University of Tokyo
2024
Tokyo University of Information Sciences
2024
Northeast Electric Power University
2024
Peking University
1997
<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{Hf}_{\text{0.5}}$</tex-math> </inline-formula> notation="LaTeX">$\text{Zr}_{\text{0.5}}$</tex-math> notation="LaTeX">$\text{O}_{\text{2}}$</tex-math> (HZO)-based ferroelectric field effect transistor (FeFET) has been recognized as a promising nonvolatile memory due to its excellent scalability and CMOS process compatibility. To realize operation with...
Ferroelectric HfO2-based thin films have attracted increasing interest due to their potential applications in nonvolatile memory areas. However, unique properties, such as imprint, lead serious reliability issues. In this study, the origin of imprint behavior is investigated by using TiN/Hf0.5Zr0.5O2 (10 nm)/TiN MFM capacitors. By modulating internal electric field during we discover that charge injection/de-trapping metal–ferroelectric interfaces plays an essential role rather than movement...