A5045743228- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Molecular Junctions and Nanostructures
- Semiconductor materials and devices
- Quantum Information and Cryptography
- Surface and Thin Film Phenomena
- Thyroid and Parathyroid Surgery
- Medical and Biological Sciences
- Engineering Technology and Methodologies
- Graphene research and applications
- Physics of Superconductivity and Magnetism
- Terahertz technology and applications
- Material Properties and Applications
- Topological Materials and Phenomena
- Advanced Chemical Physics Studies
- Bone Tissue Engineering Materials
- Mechanical and Optical Resonators
- Material Properties and Failure Mechanisms
- Electron and X-Ray Spectroscopy Techniques
- Cold Atom Physics and Bose-Einstein Condensates
- Anatomy and Medical Technology
- Metallurgical Processes and Thermodynamics
- Photochemistry and Electron Transfer Studies
- Quantum, superfluid, helium dynamics
Institute of Semiconductor Physics
2015-2024
Russian Academy of Sciences
2015-2024
Novosibirsk State University
1999-2024
E.O. Paton Electric Welding Institute
2013-2020
Novosibirsk State Technical University
2018-2019
"VNIINM" named after AA Bochvar
2018
Siberian Branch of the Russian Academy of Sciences
1995-2016
National Academy of Sciences of Ukraine
2013
Institute of Physics
2000
Computing Center
1992
We study microwave photoresponse of a short p-channel MOSFET in the subthreshold regime at temperatures from room to helium. observe large (several times) enhancement conductance 300 K, an order 77 and giant (up 4–5 orders magnitude) 4.2 K. It is shown that this mainly due microwave-induced hole tunneling between source drain. The result obtained exhibits real possibility developing substantially different kind radiation detectors fabricated on basis ordinary MOS-technology.
An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At same time a positive magnetoresistance arises at high temperatures. A model accounting electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes observation. It supported numerical simulation zero magnetic field.
A residual disorder in the gate system is main problem on way to create artificial graphene based two-dimensional electron gas. The can be significantly screened/reduced due many-body effects. To analyse screening/disorder we consider AlGaAs/GaAs/AlGaAs heterostructure with two metallic gates. We demonstrate that design least susceptible corresponds weak coupling regime (opposite tight binding) which realised via a of quantum anti-dots. most relevant type area random variation areas results...
Filling the ``terahertz gap'' is a prime technological goal. In this study, quantum point contact (QPC) operating in tunneling regime changes its conductivity by more than two orders of magnitude response to rather weak THz light. This change, caused photon-assisted tunneling, shows that QPCs under these conditions are good candidates for detectors and microwave radiation. Such detector elements do not require antennas, small, easily fabricated planar technology, thus can be handily...
Fluid dynamics is one of the cornerstones modern physics and has recently found applications in transport electrons solids. In most solids electron dominated by extrinsic factors, such as sample geometry scattering from impurities. However hydrodynamic regime Coulomb interactions transform motion independent particles to collective a viscous `electron fluid'. The fluid viscosity an intrinsic property system, determined solely electron-electron interactions. Resolving universal challenging,...
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend the orientation of magnetic field with respect to electric current. This effect, first reported a decade ago and confirmed number publications, has remained an open problem. In this work, we present systematic experimental studies disentangle different mechanisms contributing effect develop theory which describes it successfully. We show that there is new mechanism for anisotropy...
We discuss quantization of the conductance in short, ultraclean one-dimensional quantum wires a design where an electron gas is induced electrostatically. Two-level sets gates allow independent control density constriction and reservoirs, thus varying G as function bias on G(Vtg,Vsg). Up to 12 clean well-resolved G(Vsg) plateaus confirm high quality constriction. The experimental curves are modeled using three-dimensional self-consistent calculations Thomas–Fermi approximation electrostatic...
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas AlGaAs/GaAs/AlGaAs well wide temperature range (1.5K - 110K). This covers both the diffusive and ballistic interaction regimes for our samples. It has been therefore possible to crossover between these longitudinal Hall effect. perform parameter free comparison data at zero magnetic field, coefficient, magnetoresistivity recent theories interaction-induced...
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps observed, when the G changes within wide range 0<G<6e^2/h. Calculations electrostatics confirm that measured correspond to successive change total charge $e$. By modelling it is shown progression Coulomb into region G>2e^2/h may be due suppression inter-1D-subband...
We report the observation of Fermi energy controlled redirection ballistic electron flow in a three-terminal system based on small (100 nm) triangular quantum dot defined two-dimensional gas (2DEG). Measurement shows strong large-scale sign-changing oscillations partial conductance coefficient difference G(21) - G(23) gate voltage zero magnetic field. Simple formulas and numerical simulation show that effect can be explained by interference is associated with weak asymmetry or inequality...
We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such 1D ballistic structure we observed, {\em for first time,} that steps show gradual decrease from $2e^2/h$ $0.97 \times 2e^2/h$ with increasing negative gate voltage short, clean constriction. suggest this phenomenon due differing shifts subbands changing spilt-gate voltage. Both simple analytical...