A5015287783- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- solar cell performance optimization
- Photovoltaic System Optimization Techniques
- Semiconductor Quantum Structures and Devices
- Photocathodes and Microchannel Plates
- Ga2O3 and related materials
- Silicon Nanostructures and Photoluminescence
- Surface and Thin Film Phenomena
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Surface Polishing Techniques
- Thermography and Photoacoustic Techniques
- Electrocatalysts for Energy Conversion
- Molecular Junctions and Nanostructures
- Nanowire Synthesis and Applications
- Photovoltaic Systems and Sustainability
- Laser and Thermal Forming Techniques
- Urinary Tract Infections Management
Loyola University Chicago
2023
Stony Brook University
2023
IMEC
2006-2019
Imec the Netherlands
2006-2014
KU Leuven
2006-2013
Tata Institute of Fundamental Research
2002
ETH Zurich
1997-1999
École Polytechnique Fédérale de Lausanne
1995-1996
The advent of sensitive enhanced culture (metaculturomic) and culture-independent DNA-based (metagenomic) methods has revealed a rich collection microbial species that inhabit the human urinary tract. Known as microbiome, this community microbes consists hundreds distinct range across entire phylogenetic spectrum. This new knowledge clashes with standard clinical microbiology laboratory methods, established more than 60 years ago, focus attention on relatively small subset universally...
This work proves that blistering is the partial delamination of a thick enough Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer caused by gaseous desorption in upon thermal treatments above critical temperature: acts as gas barrier and bubble formation occurs. First, using an atmospheric pressure rapid processor with ionization mass spectrometry, desorbing species heating Si/Al...
Epitaxial PbSe layers on Si(111) relax nearly completely owing to the easy dislocation glide in main ${100}〈110〉$ system. Threading dislocations introduced by thermal mismatch strains are able move distances of several cm and escape at edges samples. Etch-pit densities as low ${10}^{6}\phantom{\rule{0ex}{0ex}}\mathrm{cm}{}^{\ensuremath{-}2}$ were obtained with a thickness $d\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}4\phantom{\rule{0ex}{0ex}}\ensuremath{\mu}\mathrm{m}$. The etch-pit...
Abstract A next generation material for surface passivation of crystalline Si is Al 2 O 3 . It has been shown that both thermal and plasma‐assisted (PA) atomic layer deposition (ALD) provide an adequate level p‐ n‐type substrates. However, conventional time‐resolved ALD limited by its low rate. Therefore, experimental high‐deposition‐rate prototype reactor based on the spatially separated principle developed rates up to 1.2 nm/s have demonstrated. In this work, quality uniformity films are...
Abstract In this paper, we evaluate p‐type passivated emitter and rear locally diffused (p‐PERL) n‐type totally (n‐PERT) large area silicon solar cells featuring nickel/copper/silver (Ni/Cu/Ag) plated front side contacts. By using p‐PERL n‐PERT, both cell structures can be produced with only a few adaptations in the entire process sequence because feature same design: homogeneous n + region low surface concentration, SiO 2 /SiN x :H passivation, Ni/Cu/Ag Energy conversion efficiencies up to...
Quantum computing has demonstrated superior efficiency compared to classical computing. circuits are essential for implementing functions and achieving correct computational outcomes. circuit compilers, which translate high-level quantum operations into hardware-specific gates while optimizing performance, serve as the interface between software stack physical machines. However, untrusted compilers can introduce malicious hardware Trojans circuits, altering their functionality leading...
Epitaxial growth of PbSe on (111)- and (100)-oriented Si substrates without an intermediate buffer layer is studied. It found that Si(111) the orientation IV-VI can by varied from (100) at 200 °C to (111) 400 substrate temperature. On Si(100), only layers were obtained for whole temperature range. with thicknesses above 0.5 μm cracked due thermally induced mechanical strain cooldown room This cannot be relaxed dislocation glide in first systems as it case (111)-oriented layers. The...
A next generation material for Si surface passivation is atomic layer deposited (ALD) Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> . However, conventional time-resolved ALD limited by its low deposition rate. Initially, a high-deposition-rate prototype reactor based on the spatially-separated principle has been developed, with rates up to 1.2 nm/s. Later, spatial technique...
The characteristics of p-n+ junctions in PbTe layers on Si(111) grown by molecular beam epitaxy are described. temperature dependence the leakage currents and ideality factors show that generation-recombination limited over 300–100 K range. lifetimes deduced for minority carriers (about 0.1 ns) suggest their diffusion length is density threading dislocations, which was about 108 cm−2 these heavily lattice mismatched layers. theoretical limit at 200 would be attained reducing dislocation a...
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this letter, we report on the fabrication of near-ultraviolet photodetectors based gallium nitride (GaN) layers grown a Si(111) substrate. Optoelectronic characterization was performed using front-side and backside illumination, latter possible by locally etching Si substrate under detectors reactive ion etching. The dark current after removal decreased two orders magnitude to around 20 fA at...
Rear side passivated c-Si solar cells are gaining in the last years particular interest by research organisation and industrial cell manufacturers. Those devices typically rely on chemically polished rear surfaces before applying dielectric passivation layers. It is purpose of this work to study influence polishing step performance CZ-Si that have been textured with in-line alkaline texturing equipment for formation random pyramids front wafer. Varying chemical surface preparation, roughness...
In this work, the influence of c-Si surface finishing (hydrophobic/hydrophilic) prior to deposition Al2O3 passivation layer on quality is investigated. The samples are characterized by a combination Quasi-Steady-State-PhotoConductance (QSSPC) Capacity-Conductance (CV), X-ray Photoelectron Spectroscopy (XPS) and Fourier Transformed InfraRed (FTIR) measurements. Furthermore, FTIR measurements used determine thickness interfacial SiOx layer.
This paper presents a detailed overview of the process steps involved in hybrid integration III-V infrared detector arrays and silicon readout electronics. is divided distinct parts: postprocessing Silicon circuit, Indium solderbump formation by electroplating flip-chip process. In contrast to commercially available arrays, indium technology applied array only not readout. causes specific requirements metallization sequence prior order obtain proper reflow. Two different schemes are...
This work characterizes p-type Silicon surface passivation using a high-k material (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> or HfO ) combining capacitance voltage (CV) and lifetime measurements. For AI samples, the substrate bulk quality is equivalent to CZ used in industrial solar cell processing. While has been proven provide high on doped surfaces, influence of growth...
Atomic layer deposition (ALD) of thin Al2O3 (≤ 10 nm) films is used to improve both front and rear surface passivation large-area screen-printed p-type CZ Si passivated emitter cells (PERC). As passivation, the SiNx anti reflection coating (ARC) capped with Al2O3, giving improved hydrogenation during co-firing a recombination current (J0,front) 128 ± 5 fA/cm2. blister-free stack Al2O3/SiOx/SiNx employed, leading optimal back (J0,rear) 92 6 Internal quantum efficiency (IQE) measurements...
Blister-free Al2O3-based surface passivation stacks for p-type Si passivated emitter and rear cells (PERCs) are developed. Measuring the blistering area effective recombination velocity, it is shown that using (i) an Al2O3 layer ≤ 10 nm (ii) out-gassing this film above 600 °C prior to capping necessary. These blister-free implemented as PERC: 148.25 cm 2 screen-printed with average efficiency of 19.0 % have been made. There obvious gain in open circuit voltage 5 mV compared SiOx PERC, thanks...
In this work, we report on a self-aligned nickel silicide formation technique based excimer laser annealing (ELA). We evaluate process for the front contact of industrial PERC type solar cells random pyramid textured Si surfaces where damage to surface texture, emitter passivation, or shallow junction should be avoided minimized. obtained by POCl3 diffusion were processed large area (12.5x12.5 cm2) CZ-Si. Self-aligned litho-free Ni/Cu contacts defined ps-laser ablation SiO2/SiNx...
Epitaxial Pb1−xSnxSe layers have been grown on Si substrates, and Schottky-barrier infrared sensors were fabricated in the using Pb blocking contacts. The observed current–voltage characteristics (saturation currents j0 ideality factors n) as a function of temperature are quantitatively explained with fluctuation model barrier heights [J. H. Werner, W. Güttler, J. Appl. Phys. 69, 1991 (1522)]. amount mean σ, which is typically 10–30 meV, depends layer quality fabrication procedure. Higher σ...