Chang Su

ORCID: 0009-0009-2699-895X
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About
Contact & Profiles
Research Areas
  • Semiconductor materials and devices
  • Advanced Optical Sensing Technologies
  • Real-time simulation and control systems
  • Advanced Photonic Communication Systems
  • Electrocatalysts for Energy Conversion
  • Electronic and Structural Properties of Oxides
  • Ga2O3 and related materials
  • Advanced battery technologies research
  • Advancements in Solid Oxide Fuel Cells
  • GaN-based semiconductor devices and materials
  • Advancements in PLL and VCO Technologies
  • Electrochemical Analysis and Applications
  • Advanced Fiber Laser Technologies

University of Oxford
2025

Xi'an Institute of Optics and Precision Mechanics
2024-2025

University of Chinese Academy of Sciences
2018-2025

Chinese Academy of Sciences
2018-2025

University of Science and Technology of China
2024

Institute of Modern Physics
2018

<title>Abstract</title> Metal anodes hold considerable promise for high-energy-density batteries but are fundamentally limited by electrochemical irreversibility caused uneven metal deposition and dendrite formation, which compromise battery lifespan safety. The chaotic ion flow (or flux vortex) near the electrode surface, driving these instabilities, has remained elusive due to limitations in conventional techniques such as scanning electron atomic force microscopies, invasive incapable of...

10.21203/rs.3.rs-5657098/v1 preprint EN cc-by Research Square (Research Square) 2025-01-20

The timing jitter of a single-photon avalanche diode (SPAD) plays critical role in the design and optimization front-end circuits. This paper proposes simplified model based on Verilog-A. uses random numbers to determine locations photon absorptions carrier avalanches absorption probabilities, thereby achieving calculation response time. By introducing detection probability, has corrected time obtained under ideal assumptions achieved compatibility with excess bias voltage effects, which can...

10.3390/electronics14061115 article EN Electronics 2025-03-12

10.1109/tcad.2025.3572026 article EN IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 2025-01-01

InGaAs/InP single-photon avalanche photodiodes (SPADs) is capable of detecting in the near-infrared spectrum for applications such as quantum communication, fluorescence lifetime imaging, and Light detection ranging(LIDAR). The effect multiplication layer width on performance SPADs both linear Geiger mode have been theoretically studied. Three-types planer with different are fabricated evaluated. results this study suggest that modifying can regulate breakdown voltage, punch-through dark...

10.1109/jqe.2024.3399176 article EN IEEE Journal of Quantum Electronics 2024-05-09
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