I. Zatočilová

ORCID: 0009-0009-8802-0500
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About
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Research Areas
  • Particle Detector Development and Performance
  • CCD and CMOS Imaging Sensors
  • Radiation Detection and Scintillator Technologies
  • Radiation Effects in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon and Solar Cell Technologies
  • Industrial Vision Systems and Defect Detection
  • Sensor Technology and Measurement Systems
  • Medical Imaging Techniques and Applications
  • Advanced MEMS and NEMS Technologies
  • 3D IC and TSV technologies
  • Particle physics theoretical and experimental studies
  • Advanced Optical Sensing Technologies
  • Experimental Learning in Engineering
  • Analytical Chemistry and Sensors
  • Semiconductor materials and devices

University of Freiburg
2024

Czech Academy of Sciences
2023-2024

Czech Academy of Sciences, Institute of Physics
2023-2024

Deutsches Elektronen-Synchrotron DESY
2024

TU Dortmund University
2024

European Organization for Nuclear Research
2024

University of Bonn
2024

Dortmund University of Applied Sciences and Arts
2024

University of Birmingham
2020

Carleton University
2020

Abstract Most of the tracking detectors for high energy particle experiments are filled with silicon since they radiation hard, can give very small spatial resolution and take advantage electronics foundries' developments production lines. Strip useful to cover large areas purposes, while consuming less power per area compared pixel sensors. The majority physics use conventional strip fabricated in foundries that do not stitching, relying on a number worldwide provide amounts detectors....

10.1088/1748-0221/20/01/c01027 article EN cc-by Journal of Instrumentation 2025-01-01

Abstract The bulk damage of p-type silicon detectors caused by high doses gamma irradiation has been studied. study was carried out on three types n + -in-p diodes with comparable geometries but different initial resistivities. This allowed to determine how parameters studied samples influence radiation-induced changes in the measured characteristics. were irradiated a Cobalt-60 source total ionizing ranging from 0.50 up 8.28 MGy, and annealed for 80 minutes at 60 °C. Geant4 toolkit...

10.1088/1748-0221/19/02/c02039 article EN cc-by Journal of Instrumentation 2024-02-01

In the passive CMOS Strips Project, strip sensors were designed at University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules connected stitching foundry order obtain typical lengths required for LHC Phase-II upgrade ATLAS or CMS trackers. Sensors electrical properties simulated using Sentaurus TCAD results compared experimentally measured data. Detector modules also constructed several thoroughly...

10.1016/j.nima.2024.169132 article EN cc-by-nc-nd Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2024-02-05

Abstract During the prototyping phase of new ATLAS Inner-Tracker (ITk) strip sensors, a degradation device breakdown voltage at high humidity was observed. Although temporary, showing fast recovery in dry conditions, study influence on sensor performance critical to establish counter-measures and handling protocols during production testing order ensure proper upgraded detector. The work presented here has objective for first time deterioration presence ambient ITk production-layout sensors...

10.1088/1748-0221/18/02/p02012 article EN cc-by Journal of Instrumentation 2023-02-01

Current high energy particle trackers use mostly silicon detectors as they give very good spatial resolution, are radiation hard, easy to integrate in electronic circuits and can take advantage of technology development for their fabrication. When covering large areas sensitive materials, strip convenient since be produced the full area wafer, have reduced readout channels compared pixel detectors, when stacked smartly, precise 3D resolution. Fabricating with a CMOS foundry promotes...

10.22323/1.448.0067 article EN cc-by-nc-nd 2024-02-05

In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such concept for tracking detectors. The Strips project investigates passive strip sensors fabricated by LFoundry in 150nm technology. By employing the technique of stitching, two different formats have been realised. performance characterised measurements at DESY II Test Beam Facility. response was...

10.1016/j.nima.2024.169407 article EN cc-by Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2024-04-29

In the passive CMOS Strips Project, strip sensors were designed at University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules connected stitching foundry order obtain typical lengths required for LHC Phase-II upgrade ATLAS or CMS trackers. After dicing, tested a probe station characterised Sr90-source as well laser-based edge- top-TCT systems. Sensors also simulated using Sentaurus TCAD. At last,...

10.48550/arxiv.2309.16358 preprint EN cc-by-nc-sa arXiv (Cornell University) 2023-01-01

Most of the tracking detectors for high energy particle experiments are filled with silicon since they radiation hard, can give very small spatial resolution and take advantage electronics foundries developments production lines. Strip useful to cover large areas purposes, while consuming less power per area compared pixel sensors. The majority physics use conventional strip fabricated in that do not stitching, relying on a number worldwide provide amounts detectors. Fabricating CMOS foundry...

10.48550/arxiv.2409.17749 preprint EN arXiv (Cornell University) 2024-09-26

The bulk damage of p-type silicon detectors caused by high doses gamma irradiation has been studied. study was carried out on three types n$^{+}$-in-p diodes with comparable geometries but different initial resistivities. This allowed to determine how parameters studied samples influence radiation-induced changes in the measured characteristics. were irradiated a Cobalt-60 source total ionizing ranging from 0.50 up 8.28 MGy, and annealed for 80 minutes at 60 {\deg}C. Geant4 toolkit...

10.48550/arxiv.2309.16293 preprint EN cc-by-nc-sa arXiv (Cornell University) 2023-01-01
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