A5103019130- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Photolithography Techniques
- Optical Coatings and Gratings
- Advanced Measurement and Metrology Techniques
- Surface Roughness and Optical Measurements
- Near-Field Optical Microscopy
- Optical measurement and interference techniques
- Industrial Vision Systems and Defect Detection
- Semiconductor materials and devices
- Advanced MEMS and NEMS Technologies
- Radiomics and Machine Learning in Medical Imaging
- Thyroid Cancer Diagnosis and Treatment
- Electron and X-Ray Spectroscopy Techniques
- Advanced Surface Polishing Techniques
- Image Processing Techniques and Applications
- Semiconductor materials and interfaces
- Advanced Fiber Optic Sensors
- Scientific Measurement and Uncertainty Evaluation
- Force Microscopy Techniques and Applications
- Hepatocellular Carcinoma Treatment and Prognosis
- Advanced Optical Sensing Technologies
- Acoustic Wave Resonator Technologies
- Surface and Thin Film Phenomena
- Non-Destructive Testing Techniques
- Cold Atom Physics and Bose-Einstein Condensates
Shandong Institute of Automation
2018-2021
Chinese Academy of Sciences
1999-2021
The First Affiliated Hospital, Sun Yat-sen University
2018-2021
Sun Yat-sen University
2018-2021
University of Chinese Academy of Sciences
2018-2020
Southwest Medical University
2020
Xiamen University of Technology
2016-2019
National Institute of Standards and Technology
2010-2019
Physical Measurement Laboratory
2013-2019
Union Hospital
2019
We aimed to evaluate the performance of newly developed deep learning Radiomics elastography (DLRE) for assessing liver fibrosis stages. DLRE adopts radiomic strategy quantitative analysis heterogeneity in two-dimensional shear wave (2D-SWE) images.A prospective multicentre study was conducted assess its accuracy patients with chronic hepatitis B, comparison 2D-SWE, aspartate transaminase-to-platelet ratio index and based on four factors, by using biopsy as reference standard. Its robustness...
<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Objective:</i> We aimed to propose a highly automatic and objective model named online transfer learning (OTL) for the differential diagnosis of benign malignant thyroid nodules from ultrasound (US) images. xmlns:xlink="http://www.w3.org/1999/xlink">Methods:</i> The OTL mothed combined strategy learning. Two datasets (1750 with 1078 672 nodules, 3852 3213 639 nodules) were collected develop...
Quantitative optical measurements of deep sub-wavelength, three-dimensional, nanometric structures with sensitivity to sub-nanometer details address an ubiquitous measurement challenge. A Fourier domain normalization approach is used in the imaging code simulate full three-dimensional scattered light field nominally 15 nm sized structures, accurately replicating as a function focus position. Using field, nanometer scale such 2 thin conformal oxide and topography are rigorously fitted for...
Recently, there has been significant research investigating new optical technologies for dimensional metrology of features 22 nm in critical dimension and smaller. When modeling measurements, a library curves is assembled through the simulation multidimensional parameter space. A nonlinear regression routine described this paper then used to identify an optimum set parameters that yields closest experiment-to-theory agreement. However, parametric correlation, measurement noise, model...
Optical microscopy is sensitive both to arrays of nanoscale features and their imperfections. Optimizing scattered electromagnetic field intensities from deep sub-wavelength nanometer scale structures represents an important element optical metrology. Current, well-established methods used identify defects in semiconductor patterning are jeopardy by upcoming sub-20 nm device dimensions. A novel volumetric analysis for processing focus-resolved images presented using simulated experimental...
To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit rich information content generated when simulating or acquiring several images of sub-wavelength-sized defects through best focus. These images, which are <i>xy</i> planes, collected using polarized illumination stacked according focus position, <i>z</i>, interpolation, volumetric pixels ("voxels") formed sized approximately 40 per side. From...
This paper compares and contrasts different combinations of scatterfield scatterometry optical configurations as well introduces a new approach to embedding atomic force microscopy (AFM) or other reference metrology results directly in the uncertainty analysis library-fitting process reduce parametric uncertainties. We present both simulation experimental data demonstrating this method, which is based on application Bayesian library-based regression fitting critical dimension (OCD) data....
There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer-scale changes observed when measuring dimensions of subwavelength 20 nm features or defects below 15 using angle-resolved focus-resolved data. However, these inherently involve complex analysis complicated three-dimensional electromagnetic fields. This paper develops a new approach enable the rigorous...
Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This experimental study, augmented with simulation, evaluates scatterfield microscopy to enhance detectability on two separate 22 nm node intentional array wafers. Reducing the illumination wavelength nominally delivers direct improvements detectability. Precise control focus position is also critical for maximizing signal. Engineering...
Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of pitches and linewidths decrease lithography, detection optical scattering from killer obscured by other variations, called wafer noise. Understanding separating these signals are critical to reduce false positives overlooked defects. The effects noise on defect assessed using volumetric...
MORPHINE tolerance and dependence were investigated in scopolamine-treated rats. The results showed that scopolamine treatment (up to 2 mg/kg) did not affect basal line or morphine-induced latency the tail-flick test but significantly increased escape Morris water-maze task. Co-administration of could considerably attenuate development morphine naloxone-precipitated withdrawal syndrome. Pretreatment for 7 days prior administration also reduced symptoms. Scopolamine was further shown...
Hybrid metrology, e.g., the combination of several measurement techniques to determine critical dimensions, is an increasingly important approach meet needs semiconductor industry. A proper use hybrid metrology may yield not only more reliable estimates for quantitative characterization three-dimensional (3-D) structures but also a realistic estimation corresponding uncertainties. Recent developments at National Institute Standards and Technology feature optical dimension measurements...
In this paper we present overlay measurement techniques that use small targets for advanced semiconductor applications. We employ two different optical methods to measure using modified conventional microscope platforms. They are scatterfield and through-focus scanning (TSOM) imaging methods. the TSOM method a target is scanned through focus of an microscope, simultaneously acquiring images at focal positions. The constructed images. Overlay analysis then performed method, aperture conjugate...
New techniques recently developed at the National Institute of Standards and Technology using bright-field optical tools are applied to signal-based defect analysis features with dimensions well below measurement wavelength. A key this approach is engineering illumination as a function angle entire scattered field. In paper we demonstrate advantages for die-to-die detection metrology. This methodology, scatterfield microscopy (SOM), evaluated inspection several types defined by Sematech on...
In this paper we present a method to combine measurement techniques that reduce uncertainties and improve throughput. The approach has immediate utility when performing model-based optical critical dimension (OCD) measurements. When modeling measurements, library of curves is assembled through the simulation multi-dimensional parameter space. Parametric correlation noise lead uncertainty in fitting process resulting fundamental limitations due parametric correlations. We provide strategy...
There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing throughput (speed) through rigorous combinations of two or more different techniques into single result. This approach is essential advanced 3-D when performing model-based critical dimension measurements. However, number fundamental challenges present themselves with regard to consistent noise models across hardware platforms, the need standardized set model...
Model-based measurement techniques use experimental data and simulations of the underlying physics to extract quantitative estimates measurands a specimen based upon parametric model that specimen. The uncertainties these are not only in data, but also sensitivity parameters, correlations among those parameters. combination two or more model-based as well Bayesian approach shown be optimal for obtaining lowest possible uncertainties. As an example, using this form hybrid metrology,...
A piezoelectric accelerometer based on d33 mode was studied in this work. It is comprised of multiple cantilever beams to support a central seismic mass. The PZT thin films and interdigital (IDT) electrodes are designed be deposited the surface beams. film in-plane polarized worked mode. fundamentally analyzed by using finite element method ANSYS. Results showed that presented micro can offer higher voltage output over d31 mode, significantly improving sensitivity without lowering bandwidth.
There has been much recent work in developing advanced optical metrology applications that use imaging optics for critical dimension measurements, defect detection and potential with in-die metrology. Sensitivity to nanometer scale changes observed when measuring dimensions of sub-wavelength features or defects below 20 nm using angle-resolved focus-resolved data. However, these methods inherently involve complex analysis complicated three-dimensional electromagnetic fields. This paper will...