A5102010770- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- CCD and CMOS Imaging Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Optical Sensing Technologies
- Advanced Fluorescence Microscopy Techniques
- Silicon Carbide Semiconductor Technologies
- solar cell performance optimization
- Analytical Chemistry and Sensors
- Solar Thermal and Photovoltaic Systems
- Silicon and Solar Cell Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced MEMS and NEMS Technologies
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Thermal properties of materials
- Radiation Detection and Scintillator Technologies
The Open University
2020-2024
Cardiff University
2017
University of Warwick
2001-2014
Institut Català de Nanociència i Nanotecnologia
2014
VTT Technical Research Centre of Finland
2014
Centre de Recerca Matemàtica
2014
Diamond Light Source
2014
The room-temperature effective mobilities of pseudomorphic Si/Si0.64Ge0.36/Si p-metal-oxidesemiconductor field effect transistors are reported. peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO2/Si interface roughness a major source scattering these devices, which attenuated for thicker caps. also suggested segregated Ge interferes oxidation process, leading to increased case thin
Even though the recent progress made in complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, technology still relies on conventional methods such as antireflective coatings and ion-implanted back-surface field to reduce optical electrical losses resulting limited device performance. In this work, these are replaced with nanostructured surfaces atomic layer deposited surface passivation. The results show that...
A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, photogenerated signal sampled non-destructively times results are averaged. Each measurement statistically independent by averaging electronic readout noise reduced to a level where single photons can be distinguished reliably. using this method has been simulated in TCAD several layouts have generated for 180 nm process....
A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale produce membranes of thickness between 60 nm 800 nm, large areas up 3.5 mm2. show how the optical properties change thickness, including appearance Fabry-Pérot type interference in thin membranes. The have low Q-factors,...
Measurements of low frequency noise in Si and Si0.64Ge0.36 p-channel metal oxide semiconductor field effect transistors are compared with a model carrier number fluctuations due to tunneling into an energy independent density trap states (Nox) associated mobility fluctuations. The failure the explain data leads us suggest that reduced SiGe device as is primarily dependence Nox displacement Fermi level at SiO2 interface heterostructure relative control.
This paper presents the design, manufacture and electrical characterization of novel hybrid III:V Concentrator Photovoltaic-Thermoelectric receivers. Addition an encapsulating spectral homogenizing single active surface secondary optic lens increased solar cell power output from 7.66mW (ALPHA no cooling) to 18.20mW (KAPPA with TE cooling). The effective optical concentration optics, based on short circuit current, was x2.4. A linear irradiance vs maximum receiver relationship observed...
We present an imaging pixel featuring dual conversion gain in a single exposure based on the pinned photodiode (PPD). The signal charge is first converted to voltage nondestructively using floating gate, and second done at p-n junction-based sense node (SN). Higher dynamic range (DR) achieved due sensing of same with two different gains. results from prototype 10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Si/Si0.64Fe0.36/Si p MOSFETs with written gate lengths in the range 0.5mu micron to 10mu have been fabricated a reduced thermal budget variant of standard CMOS process. The devices exhibit enhanced maximum voltage-gains and 1/f noise as compared silicon controls.
Electrical measurements have been carried out on Si/Si 0.64 Ge 0.36/Si pMOS devices and it is demonstrated that enhanced low field carrier mobilities lead to concomitant substantial enhancements in velocity overshoot transconductance at deep submicron channel lengths. This provides considerable motivation for incorporating SiGe into Si MOS technology.
A Medium Wave Infrared (MWIR) image sensor developed by Teledyne e2v UK is studied for potential use in the International Mars Ice Mapper mission (I-MIM). Featuring a 640×512 array with 15μm pixel pitch and cutoff wavelength of 5μm, employs Ga-free InAsSb/InAs Type 2 Super Lattice (T2SL) bariode (XBn) technologies. The study focuses on characterizing sensor's quantum efficiency (QE), dark current (DC), radiation hardness under cryogenic conditions down to 130K. system allowing situ...
In this work, the impact of local and remote Coulomb scattering mechanisms on electron hole mobility are investigated. The effective mobilities in quasi-planar finFETs with TiN/Hf0.4Si0.6O/SiO2 gate stacks have been measured at 300 K 4 K. At K, is degraded below that bulk MOSFETs literature, whereas comparable. modeled terms ionized impurity, Coulomb, roughness scattering. An existing model for from a polycrystalline silicon has adapted to high-κ/SiO2 stack. Subsequently, charge densities 8...