A5101612340- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Molecular Junctions and Nanostructures
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Polymer Surface Interaction Studies
- Nanowire Synthesis and Applications
- Quantum and electron transport phenomena
- Advancements in Battery Materials
- Advanced Sensor and Energy Harvesting Materials
- Topological Materials and Phenomena
- ZnO doping and properties
- Pickering emulsions and particle stabilization
- Dendrimers and Hyperbranched Polymers
- Neural Networks and Reservoir Computing
- Quantum Dots Synthesis And Properties
- Electronic and Structural Properties of Oxides
- Advanced biosensing and bioanalysis techniques
- Fuel Cells and Related Materials
- Ferroelectric and Piezoelectric Materials
- Hydrogen embrittlement and corrosion behaviors in metals
Central South University
2019-2025
Xiangtan University
2025
Smart Material (Germany)
2025
State Key Laboratory of Chemical Engineering
2014-2020
East China University of Science and Technology
2014-2020
Sungkyunkwan University
2013-2019
Samsung (South Korea)
2014-2018
Columbia University
2018
University of Massachusetts Amherst
2016-2018
This paper demonstrates a technique to form lateral homogeneous 2D MoS2 p-n junction by partially stacking h-BN as mask p-dope MoS2. The fabricated with asymmetric electrodes of Pd and Cr/Au displayed highly efficient photoresponse (maximum external quantum efficiency ∼7000%, specific detectivity ∼5 × 10(10) Jones, light switching ratio ∼10(3)) ideal rectifying behavior. enhanced generation open-circuit voltage (VOC) short-circuit current (ISC) were understood originate from the formation...
Semiconducting 2D crystals are currently receiving significant attention due to their great potential be an ultra-thin body for efficient electrostatic modulation which enables overcome the limitations of silicon technology. Here we report that, as a key building block semiconductor devices, vertical p-n junctions fabricated in ultrathin MoS2 by introducing AuCl3 and benzyl viologen dopants. Unlike usual unipolar MoS2, show (i) ambipolar carrier transport, (ii) current rectification via...
A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 109 and a maximum hole mobility 132 cm2 V−1 s−1 at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency low-power semiconductor device applications. As service our authors readers, this journal provides supporting information supplied by the authors. Such are peer reviewed may re-organized online...
A systematic modulation of the carrier type in molybdenum ditelluride (MoTe2 ) field-effect transistors (FETs) is described, through rapid thermal annealing (RTA) under a controlled O2 environment (p-type modulation) and benzyl viologen (BV) doping (n-type modulation). Al2 O3 capping then introduced to improve mobilities device stability. MoTe2 found be ultrasensitive at elevated temperatures (250 °C). Charge carriers flakes annealed via RTA various vacuum levels are tuned between...
Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The of a backward rectifying diode, Zener forward obtained from the heterojunction through thickness modulation BP flake or back gate modulation. Moreover, tunnel with precursor to negative differential resistance can be realized by applying dual gating solid polymer electrolyte layer as top dielectric material. Interestingly, steep subthreshold swing 55...
Fast-growth of single crystal monolayer graphene by CVD using methane and hydrogen has been achieved on "homemade" Cu/Ni(111) alloy foils over large area. Full coverage was in 5 min or less for a particular range composition (1.3 at.% to 8.6 Ni), as compared 60 pure Cu(111) foil under identical growth conditions. These are the bulk atomic percentages Ni, superstructure at surface these with stoichiometry Cu6Ni1 (for 1.3 7.8 Ni foil) discovered low energy electron diffraction (LEED). Complete...
A gate-controlled metal-semiconductor barrier modulation and its effect on carrier transport were investigated in two-dimensional (2D) transition metal dichalcogenide (TMDC) field transistors (FETs). strong photoresponse was observed both unipolar MoS2 ambipolar WSe2 FETs (i) at the high drain voltage due to a electric along channel for separating photo-excited charge carriers (ii) certain gate optimized barriers collection of contacts. The effective height between Ti/Au TMDCs estimated by...
Two-dimensional transition-metal dichalcogenides (TMDs) are unique candidates for the development of next-generation electronic devices. However, large contact resistance between metal and monolayer TMDs have significantly limited devices' performance. Also, integration ultrathin high-k dielectric layers with remains difficult due to lack dangling bonds on surface TMDs. We present molybdenum disulfide field-effect transistors bottom local gates consisting graphene. The atomic-level thickness...
This study illustrates the nature of electronic transport and its transition from one mechanism to another between a metal electrode MoS2 channel interface in field effect transistor (FET) device. Interestingly, measurements contact resistance (Rc) as function temperature indicate carrier across energy barrier thermionic emission at high tunneling low temperature. Furthermore, temperature, behavior is ascertained by current-voltage dependency that helps us feature direct bias Fowler-Nordheim...
This work investigates the use of oxygen plasma (O2) treatment, applied as an inductively coupled plasma, to control thickness and function a MoS2 layer. Plasma-etched exhibited surface roughness similar that pristine MoS2. The field effect transistors fabricated using plasma-etched displayed higher n-type doping concentration than x-ray photoelectron spectroscopy was performed analyze chemical composition demonstrate minimum level reactions occurred upon treatment. Moreover, Kelvin probe...
The functional reconfiguration of transistors and memory in homogenous ferroelectric devices offers significant opportunities for implementing the concepts in-memory computing logic-memory monolithic integration. Thus far, is realized through programmable doping profiles semiconductor channel using multiple-gate operation. This complex device architecture limits further scaling to match overall chip requirements. Here, reconfigurable memory/transistor functionalities a ferroelectric-gated...
Abstract Artificial photoreceptors offer a promising solution for developing biomimetic vision systems that incorporate in‐sensor processing, which can greatly reduce power consumption and operation latency compared to traditional machine systems. This work presents tetrachromatic optical synaptic device based on 2D tungsten diselenide optoelectronic p‐type transistor with unique UV light‐activated surface electron doping layer. Fully light‐controlled bidirectional excitation inhibition are...
This study addresses high electric field transport in multilayer black phosphorus (BP) effect transistors with self‐heating and thermal spreading by dielectric engineering. Interestingly, a BP device on SiO 2 substrate exhibits maximum current density of 3.3 × 10 A m −2 at an 5.58 MV −1 , several times higher than MoS . The breakdown thermometry analysis reveals that is impeded along the BP–dielectric interface, resulting plateau inside channel eventual Joule breakdown. Using size‐dependent...
Abstract Ferroelectric field‐effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low‐power logic electronics. However, the current mainstream thin‐film‐based ferroelectrics lack good compatibility with emergent 2D van der Waals (vdW) heterostructures. In this work, synthesis of thin ferroelectric Na 0.5 Bi 4.5 Ti 4 O 15 (NBIT) flakes by a molten‐salt method is reported. With dry‐transferred NBIT flake serving as...
Room-temperature Fermi–Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively long tail energy distribution. These set fundamental obstacle known as the "Boltzmann tyranny" that limits subthreshold swing (SS) and therefore minimum power consumption of 3D 2D field-effect transistors (FETs). Here, we investigated graphene (Gr)-enabled cold injection where Gr acts Dirac source to provide localized...
Ferroelectric memristors hold immense promise for advanced memory and neuromorphic computing. However, they face limitations due to low readout current density in conventional designs with low-conductive ferroelectric channels, especially at the nanoscale. Here, we report a ferroelectric-mediated memristor utilizing 2D MoS2 nanoribbon channel an ultrascaled cross-sectional area of <1000 nm2, defined by BaTiO3 stacked on top. Strikingly, Schottky barrier contact can be effectively tuned...
A strategy to construct different stimuli-responsive polymers from postpolymerization modifications of a single polymer scaffold via thiol–disulfide exchange has been developed. Here, we report on random copolymer that enables the design and syntheses series dual or multi-stimuli-responsive nanoassemblies using simple modification step. The reactive functional group involves side chain monopyridyl disulfide unit, which rapidly quantitatively reacts with various thiols under mild conditions....
A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) barrier was demonstrated. The asymmetric chemical doping to with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim at high forward biases. It results in excellent diode performances a hetero-structured graphene/h-BN/graphene diode, an factor exceeding 1000, nonlinearity ∼40,...
We introduce an effective method to degenerately dope MoTe2 by oxidizing its surface into the p-dopant MoOx in oxygen plasma. As a self-terminated process, oxidation is restricted only very top layer, therefore offering us easy and efficient control. The degenerate p-doping with hole concentration of 2.5 × 1013 cm–2 can be obtained applying ∼300 s O2 plasma treatment. Using doped MoTe2, we demonstrate record low contact resistance 0.6 kΩ μm for MoTe2. Our measurement highlights excellent...
Most of the reported field effect transistors (FETs) in two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are based on high power consumption Schottky FETs, which switching current relies electrostatic modulation barrier at metal–TMD contact interfaces. Even worse, they have been often mistakenly referred to as 2D metal-oxide-semiconductor (MOSFETs), which, however, restricted design rules. Here, we demonstrate a p-MOSFET with an intrinsic n-type WSe2 channel. This...
State number, operation power, dynamic range and conductance weight update linearity are key synaptic device performance metrics for high-accuracy low-power-consumption neuromorphic computing in hardware. However, high low power consumption couldn't be simultaneously achieved by most of the reported devices, which limits This work demonstrates van der Waals (vdW) stacked ferroelectric field-effect transistors (FeFET) with single-crystalline nanoflakes. Ferroelectrics fine vdW interface...
Abstract In the era of information, emerging hardware security primitives, i.e., random number generators and physically unclonable functions, hold profound promise for establishment exceptionally secure network information systems. Nonetheless, these potential solutions are constrained by inherent drawbacks, including need additional error correction circuits or algorithms, heightened susceptibility to environmental interference, limited data density. This paper demonstrates extremely...
Heterogeneous integration of emerging two-dimensional (2D) materials with mature three-dimensional (3D) silicon-based semiconductor technology presents a promising approach for the future development energy-efficient, function-rich nanoelectronic devices. In this study, we designed mixed-dimensional junction structure in which 2D monolayer (e.g., graphene, MoS2, and h-BN) is sandwiched between metal Ti, Au, Pd) 3D p-Si) to investigate charge transport properties exclusively an out-of-plane...