Wei Chen

ORCID: 0000-0002-1131-3585
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About
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Research Areas
  • Graphene research and applications
  • Molecular Junctions and Nanostructures
  • 2D Materials and Applications
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • Advancements in Battery Materials
  • Advanced Photocatalysis Techniques
  • Catalytic Processes in Materials Science
  • Advanced Battery Materials and Technologies
  • Supercapacitor Materials and Fabrication
  • Semiconductor materials and devices
  • Conducting polymers and applications
  • Electrocatalysts for Energy Conversion
  • MXene and MAX Phase Materials
  • Organic Electronics and Photovoltaics
  • Surface Chemistry and Catalysis
  • ZnO doping and properties
  • Perovskite Materials and Applications
  • Gas Sensing Nanomaterials and Sensors
  • Surface and Thin Film Phenomena
  • Advanced battery technologies research
  • Advanced Memory and Neural Computing
  • TiO2 Photocatalysis and Solar Cells
  • Quantum and electron transport phenomena
  • Force Microscopy Techniques and Applications

National University of Singapore
2016-2025

Tianjin University
2013-2025

Chinese Academy of Sciences
2011-2025

Yancheng Institute of Technology
2024-2025

Shanghai Advanced Research Institute
2024-2025

Xiamen University
2014-2025

Fujian Normal University
2022-2025

Dalian Polytechnic University
2021-2025

University of South China
2024

Suzhou Research Institute
2015-2024

The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, order meet that role, more efficient materials are needed suitable high-temperature applications. We show material system AgPb(m)SbTe(2+m) be this purpose. With m = 10 18 doped appropriately, n-type semiconductors can produced exhibit high figure merit ZTmax approximately 2.2 at 800 kelvin. In temperature range 600 900 kelvin, is expected...

10.1126/science.1092963 article EN Science 2004-02-05

Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of technology into nanometer (sub-100 regime light fundamental physical effects and practical considerations. Among issues discussed are: lithography, power supply threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations interconnect delays. The last part discusses several alternative or unconventional device structures,...

10.1109/5.573737 article EN Proceedings of the IEEE 1997-04-01

Following our previous findings that confinement within carbon nanotubes (CNTs) can modify the redox properties of encapsulated iron oxides, we demonstrate here how this affect catalytic reactivity catalysts in Fischer-Tropsch synthesis (FTS). The investigation, using situ XRD under conditions close to reaction conditions, reveals distribution carbide and oxide phases is modulated CNT-confined system. species inside CNTs prefer exist a more reduced state, tending form carbides which have...

10.1021/ja8008192 article EN Journal of the American Chemical Society 2008-06-25

A facile one-step electrodeposition method is developed to prepare ternary nickel cobalt sulfide interconnected nanosheet arrays on conductive carbon substrates as electrodes for supercapacitors, resulting in exceptional energy storage performance. Taking advantages of the highly conductive, mesoporous nature nanosheets and open framework three-dimensional nanoarchitectures, exhibit high specific capacitance (1418 F g–1 at 5 1285 100 g–1) with excellent rate capability. An asymmetric...

10.1021/nn503814y article EN ACS Nano 2014-08-18

Graphene has attracted a lot of interest for fundamental studies as well potential applications. Till now, micromechanical cleavage (MC) graphite been used to produce high-quality graphene sheets on different substrates. Clear understanding the substrate effect is important device fabrication graphene. Here we report results Raman micromechanically cleaved monolayer standard SiO2 (300 nm)/Si, single crystal quartz, Si, glass, polydimethylsiloxane (PDMS), and NiFe. Our data suggests that...

10.1021/jp8008404 article EN The Journal of Physical Chemistry C 2008-06-26

A solution-gate field effect transistor (SGFET) has been fabricated on few-layer graphene (FLG). The ideally polarizable graphene/aqueous electrolyte interface allows the capacitive charging of surface by hydroxyl (OH-) and hydroxonium ions (H3O+). conductivity versus gate potential curve exhibits "V" shaped ambipolar transfer characteristics graphene, with hole electron mobilities 3600 cm2/Vs 2100 cm2/Vs, respectively. shift negative pH shows a supra-Nernstian response 99 meV/pH. Our work...

10.1021/ja805090z article EN Journal of the American Chemical Society 2008-10-14

A simple and scalable method has been developed to fabricate nanostructured MnO2-carbon nanotube (CNT)-sponge hybrid electrodes. novel supercapacitor, henceforth referred as "sponge supercapacitor", fabricated using these electrodes with remarkable performance. specific capacitance of 1,230 F/g (based on the mass MnO2) can be reached. Capacitors based CNT-sponge substrates (without operated even under a high scan rate 200 V/s, they exhibit outstanding cycle performance only 2% degradation...

10.1021/nl2023433 article EN Nano Letters 2011-10-28

Blue phosphorus, a previously unknown phase of has been recently predicted by theoretical calculations and shares its layered structure high stability with black rapidly rising two-dimensional material. Here, we report molecular beam epitaxial growth single layer blue phosphorus on Au(111) using as precursor, through the combination in situ low temperature scanning tunneling microscopy density functional theory calculation. The as-grown is explained (4 × 4) unit cell coinciding (5 5) cell,...

10.1021/acs.nanolett.6b01459 article EN Nano Letters 2016-06-30

Abstract As a unique two‐dimensional nanomaterial, layered black phosphorus (BP) nanosheets have shown promising applications in electronics. Although mechanical exfoliation was successfully used to prepare BP nanosheets, it is still challenge produce novel nanostructures high yield. A facile top‐down approach for preparation of quantum dots (BPQDs) solution presented. The obtained BPQDs lateral size 4.9±1.6 nm and thickness 1.9±0.9 (ca. 4±2 layers). proof‐of‐concept application, by using...

10.1002/anie.201409400 article EN Angewandte Chemie International Edition 2015-02-03

Tuning metal-support interaction has been considered as an effective approach to modulate the electronic structure and catalytic activity of supported metal catalysts. At atomic level, understanding structure-activity relationship still remains obscure in heterogeneous catalysis, such conversion water (alkaline) or hydronium ions (acid) hydrogen (hydrogen evolution reaction, HER). Here, we reveal that fine control over oxidation states single-atom Pt catalysts through significantly modulates...

10.1038/s41467-021-23306-6 article EN cc-by Nature Communications 2021-05-21

Epitaxial graphene thermally grown on 6H-SiC(0001) can be p-type doped via a novel surface transfer doping scheme by modifying the with electron acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ). Synchrotron-based high-resolution photoemission spectroscopy reveals that from to adsorbed F4-TCNQ is responsible for of graphene. This modification appropriate molecular acceptors represents simple and effective method nondestructively dope epitaxial future nanoelectronics applications.

10.1021/ja071658g article EN Journal of the American Chemical Society 2007-08-01

The fabrication of epitaxial graphene (EG) on SiC substrate by annealing has attracted a lot interest as it may speed up the application for future electronic devices. interaction EG and is critical to its physical properties. In this work, Raman spectroscopy was used study structure with substrate. All bands blueshift from that bulk graphite made micromechanical cleavage, which attributed compressive strain induced A model containing $13\ifmmode\times\else\texttimes\fi{}13$ honeycomb...

10.1103/physrevb.77.115416 article EN Physical Review B 2008-03-11

Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source–drain tunneling, while its atomically body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached scale due multiple challenges related nanofabrication at this length contact resistance traditionally...

10.1021/acs.nanolett.6b03999 article EN Nano Letters 2016-11-07

Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents prototype two-dimensional dichalcogenide, has an bandgap that increases decreasing layer thickness. Using high-resolution scanning tunnelling microscopy spectroscopy, we measure the apparent quasiparticle energy gap be 2.40 ± 0.05 eV for...

10.1038/ncomms7298 article EN cc-by Nature Communications 2015-02-17

Five functional silanes--3-aminopropyltriethoxysilane (APTES), 3-aminopropyltrimethoxysilane (APTMS), N-(2-aminoethyl)-3-aminopropyltriethoxysilane (AEAPTES), N-(2-aminoethyl)-3-aminopropyltrimethoxysilane (AEAPTMS), and N-(6-aminohexyl)aminomethyltriethoxysilane (AHAMTES)--were assessed for the preparation of hydrolytically stable amine-functionalized silica substrates. These can be categorized into three groups (G1, G2, G3) based on intramolecular coordinating ability amine functionality...

10.1021/la203638g article EN Langmuir 2011-11-30

Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding the effect contacts performance atomically thin TMD phototransistors. Here, we fabricate phototransistors large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with metals different work function values. We found that low Schottky-contact WSe2 exhibit very photo gain (105)...

10.1021/nn503521c article EN ACS Nano 2014-08-09

Abstract The electrochemical study of single‐layer, 2D MoS 2 nanosheets reveals a reduction peak in the cyclic voltammetry NaCl aqueous solution. electrochemically reduced (rMoS ) shows good conductivity and fast electron transfer rate [Fe(CN) 6 ] 3‐/4− [Ru(NH 3 2+/3+ redox systems. obtained rMoS can be used for glucose detection. In addition, it selectively detect dopamine presence ascorbic acid uric acid. This novel material, , is believed to electrode material sensing applications.

10.1002/smll.201200044 article EN Small 2012-04-24

Iron-nitrogen-carbon (Fe-N-C) is hitherto considered as one of the most satisfactory alternatives to platinum for oxygen reduction reaction (ORR). Major efforts currently are devoted identification and maximization carbon-enclosed FeN4 moieties, which act catalytically active centers. However, fine-tuning their intrinsic ORR activity remains a huge challenge. Herein, twofold improvement pristine Fe-N-C through introducing Ti3 C2 Tx MXene support realized. A series spectroscopy magnetic...

10.1002/adma.201803220 article EN Advanced Materials 2018-09-10

Abstract: Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years varying subjects including condensed matter physics, electronic engineering, science, and chemistry since the mechanical exfoliation of graphene 2004. Starting from graphene, 2D now have become a big family with numerous members diverse categories. The unique structural features physicochemical properties make them one class most appealing candidates for wide range potential...

10.3866/pku.whxb202108017 article EN Acta Physico-Chimica Sinica 2021-01-01
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