Fernando Gallego

ORCID: 0000-0001-5127-1677
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About
Contact & Profiles
Research Areas
  • Magnetic and transport properties of perovskites and related materials
  • Electronic and Structural Properties of Oxides
  • Advanced Condensed Matter Physics
  • Physics of Superconductivity and Magnetism
  • Multiferroics and related materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Piezoelectric Materials
  • 2D Materials and Applications
  • Catalysis and Oxidation Reactions
  • Theoretical and Computational Physics
  • Atomic and Subatomic Physics Research
  • Magnetic properties of thin films
  • ZnO doping and properties
  • Catalytic Processes in Materials Science
  • Ferroelectric and Negative Capacitance Devices
  • Thin-Film Transistor Technologies
  • Gas Sensing Nanomaterials and Sensors
  • Photonic and Optical Devices
  • Superconducting Materials and Applications
  • Organic Electronics and Photovoltaics
  • Acoustic Wave Resonator Technologies
  • MXene and MAX Phase Materials
  • Quantum and electron transport phenomena
  • Transition Metal Oxide Nanomaterials

Universidad Complutense de Madrid
2017-2024

Université Paris-Saclay
2022-2024

Centre National de la Recherche Scientifique
2022-2024

Thales (France)
2024

Fundación General
2024

Laboratoire Albert Fert
2022-2023

Instituto de Ciencia de Materiales de Madrid
2017-2023

Université Paris-Sud
2022

Consejo Superior de Investigaciones Científicas
2017

Abstract Infinite layer (IL) nickelates provide a new route beyond copper oxides to address outstanding questions in the field of unconventional superconductivity. However, their synthesis poses considerable challenges, largely hindering experimental research on this class oxide superconductors. That is achieved two‐step process that yields most thermodynamically stable perovskite phase first, then IL by topotactic reduction, quality starting playing crucial role. Here, reliable...

10.1002/advs.202309092 article EN cc-by Advanced Science 2024-04-18

The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, skew or side-jump scattering due to chiral features the disorder scattering, intrinsic contribution directly linked topological properties Bloch states. Here we show that AHE artificially engineered materials which it originally absent...

10.1038/s41467-021-23489-y article EN cc-by Nature Communications 2021-06-02

The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future electronics. Among devices, multiferroic tunnel junctions are being actively investigated as they offer possibility to modulate junction current by independently controlling switching magnetization electrodes and ferroelectric polarization barrier. In this Letter, we show that spin a...

10.1103/physrevlett.122.037601 article EN publisher-specific-oa Physical Review Letters 2019-01-22

Abstract The Magnetoelectric Spin‐Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with magnetoelectric (ME) element for information writing, and spin‐orbit (SO) read‐out through spin‐charge conversion. Among candidate SO materials achieve large MESO output signal, oxide Rashba two‐dimensional electron gases (2DEGs) have shown very conversion efficiencies, albeit mostly in spin‐pumping experiments. Here, all‐electrical spin‐injection experiments nanoscale...

10.1002/adfm.202307474 article EN Advanced Functional Materials 2023-10-17

The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role mechanism triggering novel mixed electrochemical-ferroelectric states. interfaces, however, coupling between and electrochemical states has remained unexplored. Here, we make use dynamic formation oxygen vacancy profile nanometer-thick barrier tunnel junction to...

10.1103/physrevlett.125.266802 article EN Physical Review Letters 2020-12-30

Generation, manipulation, and sensing of magnetic domain walls are cornerstones in the design efficient spintronic devices. Half-metals amenable for this purpose as large low field magnetoresistance signals can be expected from spin accumulation at textures. Among half metals, La1-x Srx MnO3 (LSMO) manganites considered promising candidates their robust half-metallic ground state, Curie temperature above room (Tc = 360 K, x 1/3), chemical stability. Yet wall is poorly understood, with...

10.1002/adma.202211176 article EN cc-by Advanced Materials 2023-04-13

Abstract One of the most desirable attributes non‐volatile memories and memristors is a fast non‐destructive read out their resistive state. Prototypical ferroelectric (FE) use bulk photovoltaic response associated to polarization FE films address this requirement by optically sensing binary memory cells. A more advanced type tunnel junctions (FTJs). They feature state ratios R High / Low up 10 6 , with continuum states accessible, making them promising candidates for neuromorphic computing...

10.1002/aelm.202100069 article EN cc-by-nc Advanced Electronic Materials 2021-05-13

Memristors based on oxide tunnel junctions are promising candidates for energy efficient neuromorphic computing. However, the low power sensing of nonvolatile resistive state is an important challenge. We report optically induced a memristor La0.7Sr0.3MnO3/BaTiO3/In2O3:SnO2 (90:10) heterostructure with 3 nm thick BaTiO3 ferroelectric barrier. The memristive response originates from modulation interfacial Schottky barrier at La0.7Sr0.3MnO3/BaTiO3 interface, yielding robust intermediate...

10.1063/5.0071748 article EN publisher-specific-oa Applied Physics Letters 2022-01-17

Abstract SrIrO 3 is a correlated semimetal with narrow t 2g d-bands of strong mixed orbital character resulting from the interplay spin-orbit interaction due to heavy iridium atoms and band folding induced by lattice structure. In ultrathin layers, inversion symmetry breaking, occurring naturally presence substrate, opens new hopping channels, which in causes deep modifications electronic Here, we show that films effect breaking on structure can be externally manipulated field experiment. We...

10.1038/s43246-023-00362-7 article EN cc-by Communications Materials 2023-05-24

Controlling magnetic anisotropy is an important objective towards engineering novel device concepts in oxide electronics. In thin film manganites, weak and it primarily determined by the substrate, through induced structural distortions resulting from epitaxial mismatch strain. On other hand, cobaltites, with a stronger spin orbit interaction, typically much stronger. this paper, we show that interfacing La0.7Sr0.3MnO3 (LSMO) ultrathin LaCoO3 (LCO) layer drastically modifies of manganite,...

10.1063/1.5002090 article EN cc-by APL Materials 2017-09-01

Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and inversion ferroelectric polarization. Disentangling both effects is major importance toward exploiting these practical spintronic or spinorbitronic devices. We report on independent control vacancy tunnel junctions with a La0.7Sr0.3MnO3 bottom electrode, BaTiO3 barrier, Ni top electrode. show that concurrence interface oxidation allows for controlled spin...

10.1063/5.0039030 article EN cc-by APL Materials 2021-03-01

Abstract Research on proximity effects in superconductor/ferromagnetic hybrids has most often focused how superconducting properties are affected—and can be controlled—by the of ferromagnet’s exchange or magnetic fringe fields. The opposite, namely possibility to craft, tailor and stabilize texture a ferromagnet by exploiting effects, been more seldom explored. Here we show that flux trapped high-temperature YBa 2 Cu 3 O 7-δ microstructures used modify reversal hard ferromagnet—a...

10.1038/s41598-021-99963-w article EN cc-by Scientific Reports 2021-10-21

The fabrication of artificial materials by stacking individual two-dimensional (2D) is amongst one the most promising research avenues in field 2D materials.Moreover, this strategy to fabricate new man-made can be further extended fabricating hybrid stacks between and other functional with different dimensionality making potential number combinations almost infinite.Among all these possible combinations, mixing transition metal oxides result especially useful because large amount interesting...

10.1088/2053-1583/aa797b article EN 2D Materials 2017-07-20

Swirling spin textures, including topologically nontrivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental applied points of view. However, creation, controlled manipulation, stability are typically constrained certain systems with specific crystallographic symmetries, bulk or interface interactions, and/or a precise stacking sequence materials. Recently, new...

10.1021/acsami.3c17671 article EN cc-by ACS Applied Materials & Interfaces 2024-04-02

The interplay between ferromagnetism and superconductivity has attracted substantial interest due to its potential for exotic quantum phenomena advanced electronic devices. Although are antagonistic phenomena, ferromagnets (F) can host spin-triplet induced via proximity with superconductors (S). To date, most of the experimental effort been focused on single S/F/S junctions. Here, we have found fingerprints long-range superconducting effect in micrometric weak-link arrays, formed by...

10.1063/5.0189305 article EN cc-by Applied Physics Letters 2024-05-27

The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with magnetoelectric (ME) element for information writing, and spin-orbit (SO) read-out through spin-charge conversion. Among candidate SO materials achieve large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection experiments nanoscale...

10.48550/arxiv.2309.13992 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Swirling spin textures, including topologically non-trivial states, such as skyrmions, chiral domain walls, and magnetic vortices, have garnered significant attention within the scientific community due to their appeal from both fundamental applied points of view. However, creation, controlled manipulation, stability are typically constrained certain systems with specific crystallographic symmetries, bulk, or interface interactions, and/or a precise stacking sequence materials. Here, we make...

10.48550/arxiv.2310.11298 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Complex oxides are challenging systems where subtle changes in structure, electronic doping or chemistry may result colossal responses macroscopic physical behavior.Amongst complex we can find insulators, high-Tc superconductors, ferromagnets, ferroelectrics, multiferroics and a wide list of families displaying the most disparate behaviors.Many these materials exhibit perovskite-like structure.Being highly compatible with each other, high quality epitaxial heterostructures be grown novel...

10.1017/s1431927617008625 article EN Microscopy and Microanalysis 2017-07-01

All oxide magnetic tunnel junctions based on epitaxial La0.7Ca0.3MnO3 (LCMO)(8 nm)/PrBa2Cu3O7 (PBCO) (3–8 nm)/LCMO(25–50 nm) heterostructures grown (100) SrTiO3 are examined. Manganite electrodes show large (bulk-like) moments and exhibit different anisotropies with easy axes directions. A form of low dimensional magnetism is induced at the interfaces by superexchange interaction across reconstructed bonds. It acts as an exchange spring, driving ferromagnetic coupling between electrodes....

10.1002/pssa.201800265 article EN physica status solidi (a) 2018-07-24
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