A5087813798- Ferroelectric and Piezoelectric Materials
- Microwave Dielectric Ceramics Synthesis
- Magnetic and transport properties of perovskites and related materials
- Advanced ceramic materials synthesis
- Multiferroics and related materials
- Electronic and Structural Properties of Oxides
- Advanced Condensed Matter Physics
- Dielectric properties of ceramics
- Geotechnical Engineering and Soil Mechanics
- Advanced Memory and Neural Computing
- Hydrocarbon exploration and reservoir analysis
- Geotechnical Engineering and Soil Stabilization
- Landslides and related hazards
- Geotechnical Engineering and Underground Structures
- Rock Mechanics and Modeling
- Metallurgy and Material Forming
- Geomechanics and Mining Engineering
- Drilling and Well Engineering
- Gas Sensing Nanomaterials and Sensors
- Transportation Planning and Optimization
- Hydraulic Fracturing and Reservoir Analysis
- Geoscience and Mining Technology
- Advanced Sensor and Energy Harvesting Materials
- Transition Metal Oxide Nanomaterials
- Electrical and Thermal Properties of Materials
National University of Defense Technology
2018-2024
Institute of Rock and Soil Mechanics
2012-2024
University of Chinese Academy of Sciences
2023
Southeast University
2018-2023
Central South University
2013-2021
State Key Laboratory of Geomechanics and Geotechnical Engineering
2020
Shanghai Institute of Microsystem and Information Technology
2018
Tsinghua University
2013-2016
Beijing Institute of Technology
2016
Changsha University
2015
Electrical manipulation of lattice, charge, and spin has been realized respectively by the piezoelectric effect, field-effect transistor, electric field control ferromagnetism, bringing about dramatic promotions both in fundamental research industrial production. However, it is generally accepted that orbital materials are impossible to be altered once they have made. Here we use electric-field dynamically tune electronic phase transition (La,Sr)MnO3 films with different Mn^4+/(Mn^3+ +...
The search for self-rectifying resistive memories has aroused great attention due to their potential in high-density memory applications without additional access devices. Here we report the forming-free and bipolar switching behavior of a simple Pt/TaOx/n-Si tri-layer structure. phenomenon is attributed generation large amount oxygen vacancies, TaOx region that close proximity TaOx/n-Si interface, via out-diffusion ions from n-Si. A maximum rectification ratio ∼6 × 10(2) obtained when...
The control of complex oxide heterostructures at atomic level generates a rich spectrum exotic properties and unexpected states the interface between two separately prepared materials. frustration magnetization conductivity manganite perovskite surface/interface which is inimical to their device applications, could also flourish in tailored functionalities return. Here we prove that exchange bias (EB) effect can unexpectedly emerge (La,Sr)MnO3 (LSMO) "single" film when large compressive...
Reversible orbital reconstruction driven by ferroelectric polarization modulates the magnetic performance of model ferroelectric/ferromagnetic heterostructures without onerous limitations. Mn- occupancy and related interfacial exotic states are enhanced weakened negative positive electric fields, respectively, filling missing member—orbital in mechanism magnetoelectric coupling advancing application orbitals to microelectronics. As a service our authors readers, this journal provides...
The electronic phase transition has been considered as a dominant factor in the phenomena of colossal magnetoresistance, metal‐insulator transition, and exchange bias correlated electron systems. However, effective manipulation remained challenging issue. Here, reversible control ferromagnetic manganite films through ionic liquid gating is reported. Under different gate voltages, formation annihilation an insulating magnetically hard soft matrix, which randomly nucleates grows across film...
The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach scale atom even subatom. Here, an orbital switch formed at interface between BaTiO 3 (BTO) and La 0.5 Sr MnO (LSMO) used manipulate electric field effect in LSMO/BTO heterostructure. based on connection or breakdown interfacial Ti–O–Mn bond due ferroelectric displacement under external field. This finding would pave way for tuning material...
The interplay between orbital, charge, spin, and lattice degrees of freedom is at the core correlated oxides. This extensively studied interface heterostructures constituted two-layer or multilayer oxide films. Here, we demonstrate interactions orbital reconstruction charge transfer in surface regime ultrathin (La,Sr)MnO3, which a model system are manipulated quantitative manner by symmetry-breaking epitaxial strain, both tensile compressive. established transfer, accompanied formation...
Manipulation of oxygen vacancies via electric-field-controlled ionic liquid gating has been reported in many model systems within the emergent fields oxide electronics and iontronics. It is then significant to investigate vacancy formation/annihilation migration across an additional ferroelectric layer with gating. Here, we report that a combination gating, remote control magnetic phase transition can be achieved SrCoO2.5 films capped ultrathin BaTiO3 at room temperature. The acts as atomic...
We verify that the exchange bias effect unexpectedly emerges in a single ${\mathrm{LaMnO}}_{3\ensuremath{-}\ensuremath{\delta}}$ film, one of most studied correlated oxides. combine x-ray absorption spectroscopy results, which serves as fingerprint electronic structure, with microstructure characterizations and magnetization data to explore origin behavior. Taken together, these measurements provide compelling evidence formation Mn${}^{2+}$ component associated double between...
We investigate charge transfer, orbital reconstruction, and the emergence of exchange bias in (La,Sr)MnO3/LaNiO3 heterostructures. demonstrate that transfer from Mn3+ ions to Ni3+ is accompanied by formation hybridized Mn/Ni 3z2 – r2 orbits at interface, instead strain-stabilized Mn Ni x2 y2 bulk films. In heterostructures with ultrathin LaNiO3, reconstruction induced results magnetization frustration (La,Sr)MnO3 interface. But strain effect exerted growth LaNiO3 top layer plays a dominant...
We investigate the effect of CaO/SiO 2 (molar ratio) and B O 3 content on structure sintering contraction behaviors Calcium borosilicate (CaO–B –SiO , CBS) glass-ceramic through dilatometer Fourier transform infrared (FTIR) spectroscopy. The results show that sintering-shrinkage CBS glass-ceramics is promoted dramatically with increase to 1.14, then keeps nearly constant as further increases. This phenomenon correlated degree polymerization (DOP) Si–O network modulated by additionally, two...
This review article aims at illustrating the recent progresses in electrical control of magnetism oxides with profound physics and enormous potential applications. In first part, we provide a comprehensive summary classic multiferroic heterostructures clarify their various mechanisms lying behind. The second part focuses on novel route electric double layer gating for driving significantly electronic phase transition magnetic by small voltage. field applied ordinary dielectric oxide third is...
An unconventional resistive switching behavior is observed in ferroelectric tunnel junctions, which builds a bridge between junctions and random access memory devices.
Abstract Given the remarkable advantages of high power density, fast charge–discharge speed, good stability, and low cost, dielectric capacitors have sparked tremendous research interest in recent years for their unique applications electrical systems modern electronics. As satisfying future demands miniaturization integration devices, novel material with energy storage density should be developed urgently. Importantly, ceramic‐polymer nanocomposites, which combine permittivity ceramic...