Abstract On-chip twisted light emitters are essential components of orbital angular momentum (OAM) communication devices 1, 2 . These address the growing demand for high-capacity systems by providing an additional degree freedom wavelength/frequency division multiplexing (WDM/FDM). Although whispering-gallery-mode-enabled OAM have been shown to possess some advantages 3, 4, 5 , such as compactness and phase accuracy, their inherent narrow bandwidths prevent them from being compatible with...

Based on restricted interferences mechanism in a 1x2 MMI beam splitter, we theoretically investigate and experimentally demonstrate an ultra-compact MMI-based demultiplexer for the NIR/MIR wavelengths of 1.55 μm 2 μm.The device is fabricated 340 nm SOI platform, with footprint 293x6 .It exhibits extremely low insertion losses 0.14 dB 1.2 at μm, respectively, contrasts approximately 20 both wavelengths, cross-talk 18.83 dB.

In this letter, we demonstrate high-performance waveguides and MMIs on an SOI platform at the fixed wavelength of 2 μm. The propagation loss demonstrated by insertion are as low 1 dB/cm 0.29 dB, respectively, with TE polarization. To best our knowledge, is lowest for Si rib reported a

We designed and demonstrated TE-mode arbitrary power splitters based on adiabatic mode evolution. The are with a footprint of smaller than 12 × 2.9 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , fabricated 400-nm silicon-on-insulator platform, requiring only single etch step. optimization process the conditions for arbitrary-power splitting performed using three-dimensional-FDTD simulations. prove this concept through fabrication...

A compact and ultrabroadband polarization beam splitter (PBS) utilizing a hybrid plasmonic Y-branch (HPYB) on silicon-on-insulator (SOI) platform is proposed numerically demonstrated. The HPYB consists of vertical waveguide (HPW) horizontal HPW formed by silicon (Si) silver (Ag) strip waveguides sandwiched with dioxide (SiO2) layer, in which the modes (HPMs) are excited input transverse electric (TE) magnetic (TM) modes, respectively. HPMs split into different ports coupled back to TE TM...

The photonic spin Hall effect plays an important role in information technologies, especially on-chip devices. However, conventional devices suffer from low efficiency or narrow bandwidth, which prevents their practical application. Here, we introduce a device using inverse design to achieve both high and broadband. Spin-dependent light separation is enabled by 2.4 μm circular with 100 nm pixels. element fabricated on silicon-on-insulator wafer compatible standard integrated circuit....

A conversion between the electromagnetically induced transparency (EIT) transmission and Fano is theoretically experimentally demonstrated in an all-pass microring-Bragg grating (APMR-BG) coupled-resonator system. In this work, coupling two resonators (the microring resonator Fabry-Perot formed by Bragg gratings) gives rise to EIT transmissions. The resonant status strongly depends on round-trip attenuation of strength. By tuning strength, transmissions can be controlled converted. device...

Thermally tunable Fano and electromagnetically induced transparency (EIT) resonances are theoretically experimentally demonstrated based on a Mach-Zehnder interferometer assisted Bragg grating-microring coupled resonant system silicon-on-insulator (SOI) platform. In this paper, the destructive constructive coupling between two resonators, microring resonator Fabry-Perot formed by gratings, give rise to EIT resonances, respectively. The resonance lineshape can be controlled converted tuning...

In recent years, the 2 µm waveband has been gaining significant attention due to its potential in realization of several key technologies, specifically, future long-haul optical communications near 1.9 wavelength region. this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range 1881-1947 nm (66 nm) for first time, providing good compatibility hollow-core bandgap fiber and thulium-doped amplifier. Room-temperature continuous-wave operation was...

An all-pass microring-Bragg gratings (APMR-BG) based coupling resonant system is proposed and experimentally demonstrated to generate electromagnetically induced transparency (EIT)-like transmission for the first time. The between two light path ways in micro-ring resonator Fabry-Pérot (F-P) formed by sections of Bragg gives rise EIT-like spectrum. This has advantage a small footprint consisting only one microring bus waveguide with gratings. It also large fabrication tolerance as overlap...

A mid-infrared (MIR) biochemical sensor based on a one-time Si etching suspended microracetrack resonator with lateral subwavelength-grating metamaterial cladding is theoretically and experimentally demonstrated commercial 340-nm-thick-top-silicon silicon-on-insulator platform. The structure offers an increased interaction area between the mode field chemicals under investigation, as well good sensitivity. process also eases fabrication. waveguide optimized to obtain balance propagation loss...

Compact all-pass and add-drop microring resonators (radius=10 μm) integrated with grating couplers working at 2 μm wavelength are designed, fabricated, characterized on a commercial 340-nm-thick-top-silicon silicon-on-insulator platform. They suitable for high-volume optical circuits as the fabrication process involved uncomplicated complementary metal-oxide-semiconductor (CMOS)-process compatible, thus making them more convenient to be utilized. The performance of couplers, based four most...

Silicon photonics at the 2 μm waveband, specifically 1.9 wavelength region is strategically imperative. This due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well potential enable a wide range of applications. While conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing high-index contrast. On other hand, SiN can serve reduce...

In this paper, a MIR silicon modulator operating at 2 µm wavelength is experimentally demonstrated. The shows 9.7 GHz 3-dB electro-optic bandwidth Vbias= −3V. We also present optical modulation 12.5 Gb/s.

Hyper scale datacenters drive amazing Ethernet volumes when thousands of servers are connected on one site, which creates high-density interconnect links between servers, switches and routers. Optical technologies considered as possible solutions to meet the future datacenter requirements in terms cost, power consumption, port density performance. In this paper, evolution optoelectronic integrated circuits for reducing improving decreasing cost optical network, such miniaturization chips,...

A dual-band optical filter based on a single microring resonator embedded with nanoholes is theoretically and experimentally demonstrated for the first time. numerical model transfer matrix method utilized to simulate performance of this device. The coupling between Fabry-Pérot formed by gives rise filtering spectrum. In our experiment, was fabricated commercial 220-nm-thick-top-silicon silicon-on-insulator (SOI) platform. Good achieved measured extinction ratio 9 dB, insertion loss lower...

A microring-Bragg grating based coupling resonant system is experimentally demonstrated to generate switchable EIT-like and Fano transmissions for the first time. The resonance state dependent on relation between coefficient round-trip-intensity-attenuation.

An optical mode converter is proposed and designed. It consist of Y-branch splitters, combiners, phase shifter array. The input fundamental can be converted to TE1, TE2, TE3 by controlling the shifters. Furthermore, support high order modes conversion expansion structure. designed for wavelength mid infra-red (MIR). This device shows potential applications division multiplexing (MDM) system at MIR. . In recent years, on-chip has attracted much more attention since its pave a way increase...

In this paper, we present our recent results on the development of passive devices for short-wave infrared and MIR applications. SOI platform is used several devices, like waveguides, MMIs, spirals, unbalanced MZI, are designed, fabricated characterized at wavelengths 2μm 3.8μm.

We present the first MIR hybrid Si external cavity laser with a tunable range below 2 μm mark. To best of our knowledge, we have achieved largest 66 nm (1881-1947 nm) near waveband in silicon photonics.

In the last decades, dual-band optical filters (DBOFs) have attracted great attentions as they play important roles in various applications, such modulation [1], sensing [2], fast/slow light [3], etc. Multiple microring resonators been utilizing methods to realize filtering spectrum [4-6]. However, multiple-microring-resonators structure is not suitable for high volume integration due its large form factor. this work, we firstly developed a novel design based on...

A one-time etching suspended microracetrack resonator with lateral sub-wavelength-grating (SWG) metamaterial cladding is theoretically and experimentally demonstrated on commercial 340 nm-thick-top-silicon silicon-on-insulator (SOI) platform for mid-infrared (MIR) bio-chemical sensing applications. The structure can offer a larger exposed area of waveguides the testing chemicals as well decent sensitivity. And process also eases fabrication. waveguide optimized balance between propagation...

Silicon photonics has traditionally focused on near infrared wavelengths, with tremendous progress seen over the past decade. However, more recently, research extended into mid wavelengths of 2 μm and beyond. Optical modulators are a key component for silicon interconnects at both conventional communication 1.3 1.55 μm, emerging mid-infrared wavelengths. The wavelength range is particularly interesting number applications, including sensing, healthcare communications. absorption band...

We present the first MIR hybrid Si external cavity laser with a tunable range below 2 μm mark. To best of our knowledge, we have achieved largest 66 nm (1881–1947 nm) near waveband in silicon photonics. © 2019 The Author(s)

High-power and narrow vertical divergence angle 980nm InGaAs/AlGaAs quantum well semiconductor lasers have important applications in optical fiber communications, medical military fields so on. Traditional laser is difficult for obtaining satisfactory power output beam quality simultaneously. Large cavity high (PBC-HPLDs) with one-dimensional photonic crystal structure can achieve these excellent characteristics. Its good quality, power, efficiency coupling fiber, making such devices an...