GaN-based devices have grown rapidly in recent decades, due to their important research value and application prospects. There is a desire monolithically integrate different GaN into single chip for the development of future optoelectronic systems with low power consumption. In addition improved multifunctional performance, miniature integrated system can result significant reduction material costs, processing packaging costs. view such prospects, we propose monolithic, top-down approaches...

Due to the overlapping emission and detection spectra of quantum well (QW) diodes, they inherently possess dual functions light detection. In this paper, we integrate a 4 × array QW diodes combine it with programmable circuit convolutional neural network algorithm, ultimately proposing simultaneous display-communication system. This system not only displays visual content but also receives external signals via wireless communication classifies recognizes signal an accuracy exceeding 95%. The...

Abstract Optical fiber curvature sensors have been considered as a promising option for human motion detection due to its good toughness, bending flexibility and anti-electromagnetic interference. However, wearable devices, the miniature configuration is preferred, high integration of light emitter, receiver guided essential configure miniaturized sensing system. Here, we present system by integrating GaN-based optoelectronic chip with plastical optical (POF). The emitter detector are...

Integrating optoelectronic devices with various functions into a monolithic chip is popular research frontier. The top-down integration scheme on silicon-based III-nitride wafers has unique advantages. A on-chip system lighting source, electrical absorption modulator, waveguide and photodetector the same structure were designed fabricated to discover asymmetry of photon emission in quantum well diode. characteristics characterized detail three different spectral redshifts observed...

The bandgap energies of the group III-V semiconductor gallium nitride (GaN) and its alloys cover emission wavelengths ranging from ultraviolet to visible. Concurrently, GaN has enabled high performance transistors provide attractive solutions in voltage frequency regimes. Both optoelectronics electronics have been successfully developed, two technologies are often dependent on each other many real-life applications. In simplest case, both light-emitting diode (LED) photodiode be driven or...

The demand for on-chip multifunctional optoelectronic systems is increasing in today's Internet of Things era. III-nitride quantum well diodes (QWDs) can transmit and receive information through visible light be used as both light-emitting (LEDs) photodetectors (PDs). Spectral emission-detection overlap gives the QWD an intriguing capability to detect modulate emitted by itself. In this paper, coexistence emission detection a experimentally demonstrated, wireless video communication system...

Reflection-type photoplethysmography (PPG) pulse sensors are widely used in consumer markets to measure cardiovascular signals. Different from off-chip package solutions which the light-emitting diode (LED) and photodetector (PD) separate chips, a GaN integrated optoelectronic chip with novel ring structure is proposed realize PPG sensor. The consists of two multiple-quantum well (MQW) diodes. For higher sensitivities, central peripheral MQW diodes suitable as LED PD, respectively. results...

Abstract Micro multiple quantum well (MQW) III‐nitride diodes usually function as micro light‐emitting diodes, which are considered the next generation of display technology. In addition to both illumination and display, MQW in theory have capability detect modulate light. Here, proof that diode can simultaneously emit light is experimentally confirmed by a wireless communication system using two identical devices. The 20 × monolithically integrated into single chip real‐time imaging...

The combination of plastic optical fiber (POF) with monolithically integrated transmitter and receiver is becoming increasingly attractive for the development miniature optoelectronic sensing systems. Here, we propose a temperature system by integrating GaN chip POF aluminum (Al) reflector. Owing to overlap between electroluminescence responsivity spectra multiple quantum well (MQW) diodes, both having identical MQW structures are on tiny using same fabrication process flow. Environmental...

Lightweight, low-cost, and simple systems for magnetic field sensing are in high demand. Here, we demonstrate such a system by integrating light source, detector, fluid (MF), plastic optical fiber (POF). Two bifunctional AlGaInP diodes with identical multiple-quantum well structures separately function as the source detector of due to partial overlap between electroluminescence responsivity spectra. Magnetic is realized changing amount reflected change reflection coefficient POF/MF interface...

Multiple-quantum well (MQW) III-nitride diodes can both emit and detect light. In particular, a diode absorb shorter-wavelength photons generated from another that shares an identical MQW structure because of the spectral overlap between emission detection spectra diode, which establishes wireless visible light communication system using two diodes. Moreover, modulating retro-reflector (MRR) enables asymmetric optical links, forms two-way link single transmitter receiver. Here, in...

With the rapid development of take-out industry, taste and hygiene ratings as social-based information have been frequently used by online food-ordering platforms to facilitate consumer purchases. The present study aims uncover effects on decision incorporating behavioral neural approaches. results showed that a high rating induced higher ordering intention than low rating, rating. effect was moderated Hygiene had greater impact when (vs. low). In addition, inconsistency between increased...

Multifunctioning InGaN/GaN multi‐quantum well (MQW) diodes can transmit and detect light separately. In particular, MQW have spectral overlap between electroluminescence (EL) responsivity, conferring the unique ability to emitted by another device sharing an identical structure. Herein, a III‐nitride transmitter receiver on single chip are monolithically integrated, which establish asymmetric optical link significantly reduce material processing costs. By attaching skin with emitting toward...

Multiple-quantum-well (MQW) diodes have a variety of light emission, transmission, modulation, and detection functions. In particular, they feature an emission-detection spectral overlap region, allowing them to be used as both transmitters receivers at the same time. Here, we vertically assemble red, green, blue MQW create wavelength-division multiplexing (WDM) by using distributed bragg reflector (DBR) technique. A single-link communication system, in which longer-wavelength photons can...

Multiple-quantum well (MQW) diodes can be used as bifunctional due to the emission-detection spectral overlap. When integrated with magnetic fluids (MFs) that have tunable refractive index, they designed micro field sensors. The sapphire substrate of MQW diode chip consists an transmitter and receiver is directly exposed MF, external strength change index at boundary between thus modulating reflected light realizing sensing. Verified by experimental measurements, micromagnetic sensor has a...

In this Letter, we report an effective monolithic integration of a metal oxide semiconductor field effect (MOSFET) phototransistor (PT) and light-emitting diode (LED) on GaN-on-Si LED epitaxial (epi) wafer. Avoiding additional growth or Si diffusion, the PT was directly fabricated epi layer, providing cost-effective facile method. As driver, could modulate both peak value light intensity output current integrated LED. ultraviolet (UV) detector, our showed sufficient responsivity. It found...

When a quantum well (QW) diode is biased with forward voltage and illuminated an external shorter-wavelength light, the device simultaneously emits detects injected current induced mixed inside wells. Separating these superimposed dynamic electrical signals useful for development of multifunctional displays that can transmit receive light signals. By utilizing unique overlap between electroluminescence detection spectra, we establish wireless optical communication system using two AlGaInP...

III-nitride optoelectronic chips have tremendous potential for developing integrated computing and communication systems with low power consumption. The monolithic, top-down approaches are advantageous simplifying the fabrication process reducing corresponding manufacturing cost. Herein, an ultraviolet optical interconnection system is investigated to discover way of multiplexing between emission absorption modulations on a monolithic chip. All on-chip components, transmitter, monitor,...

We report a monolithically integrated ultraviolet (UV) photoelectric switch based on GaN-on-silicon platform for the first time. The novel consists of U-shaped trench metal-oxide-semiconductor field effect transistor (UMOSFET), an InGaN/GaN multiple quantum wells (MQW) UV photodiode (PD), and thin-film resistor. A common blue light-emitting diode epi wafer is adopted to design fabricate without extra epitaxy growth or ion implantation process, which greatly simplifies fabrication. backside...

Due to the electro-optic property of InGaN multiple quantum wells, a III-nitride diode can provide light transmission, photo detection, and energy harvesting under different bias conditions. Made diodes arrayed in single chip, combination allows transmit, detect, harvest visible at same time. Here, we monolithically integrate transmitter, receiver, harvester using compatible foundry process. By adopting bottom <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">...

Object detection of remote sensing images (RSIs) is an active yet challenging task because the complex appearance ground objects and particular imaging views. One difficulties in RSI object orientation variation, where could take on arbitrary orientations due to birdview shot from high altitudes. For oriented detection, existing methods rely largescale dense annotations for training deep networks under full supervision, which are resource-intensive. To address this problem, (a) we propose a...

In a III-nitride multiple quantum well (MQW) diode biased with forward voltage, electrons recombine holes inside the MQW region to emit light; meanwhile, utilizes photoelectric effect sense light when higher-energy photons hit device displace in diode. Both injected and liberated are gathered diode, thereby giving rise simultaneous emission-detection phenomenon. The 4 × diodes could translate optical signals into electrical ones for image construction wavelength range from 320 440 nm. This...