A5018610853- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Thermal properties of materials
- Intermetallics and Advanced Alloy Properties
- Advanced Thermodynamics and Statistical Mechanics
- Heusler alloys: electronic and magnetic properties
- Material Science and Thermodynamics
- Thermal Radiation and Cooling Technologies
- Rare-earth and actinide compounds
- Thermodynamic and Structural Properties of Metals and Alloys
- Carbon Nanotubes in Composites
- Physics of Superconductivity and Magnetism
- Electric Power Systems and Control
- Electronic Packaging and Soldering Technologies
- Topological Materials and Phenomena
- Optical properties and cooling technologies in crystalline materials
- Metallurgical and Alloy Processes
- Heat Transfer and Optimization
- Magnetic Properties and Applications
- Magnetic Field Sensors Techniques
- Chemical and Physical Properties of Materials
Physicotechnical Institute
2024
Ioffe Institute
2005-2023
Russian Academy of Sciences
2006-2015
Physical and Technical Institute
2009
Physico-Technical Institute
2006
In this paper the results of study kinetic properties Mg/sub 2/Si/sub 0.4/Sn/sub 0.6/ solid solution are presented. It is shown that it possible to produce with p-type various hole concentration (up 4 /spl middot/ 10/sup 19/cm/sup -3/). Seebeck and Hall coefficients electrical conductivity were measured in temperature range 100 - 800 K. The mobility these solutions lower than electrons. Some parameters valence band determined.
The possibility of replacing iron with cobalt in disilicide is studied. It has been shown, that a wide range compositions, an attempt to replace leads the formation silicides. Using composition Fe0.98Co0.015Si2 as example, it shown during directional crystallization and subsequent annealing samples, regular microstructure formed. Anisotropy thermoelectric properties observed along across axis sample. In region low concentrations, upon transition pure β-FeSi2, sing magnitude thermopower...
In this work, we study thermoelectric properties of GeTei-based alloys, doped with bismuth, partial substitution lead for germanium: Ge 0.86 Pb 0.1 Bi 0.04 Te. The aim the is to explore possibility increasing efficiency a compound by combining optimal doping and isovalent improve electronic simultaneous decrease lattice thermal conductivity. We studied alloy samples prepared in two different research laboratories using similar, but not completely identical procedures. It shown that...