A5057341354- Advanced Thermoelectric Materials and Devices
- Rare-earth and actinide compounds
- Magnetic Properties of Alloys
- Semiconductor materials and interfaces
- Magnetic and transport properties of perovskites and related materials
- Intermetallics and Advanced Alloy Properties
- Thermodynamic and Structural Properties of Metals and Alloys
- Chalcogenide Semiconductor Thin Films
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Metallurgical and Alloy Processes
- Topological Materials and Phenomena
- Phase-change materials and chalcogenides
- Iron-based superconductors research
- Advanced Condensed Matter Physics
- nanoparticles nucleation surface interactions
- Material Science and Thermodynamics
- Thermal Expansion and Ionic Conductivity
- Metallic Glasses and Amorphous Alloys
- Thermal properties of materials
- Advanced Thermodynamics and Statistical Mechanics
- Advanced Chemical Physics Studies
- Theoretical and Computational Physics
- Graphene research and applications
- Chemical Thermodynamics and Molecular Structure
Ioffe Institute
2015-2025
Russian Academy of Sciences
2005-2018
Physico-Technical Institute
2006-2018
St. Petersburg College
2017
ITMO University
2015-2016
Leibniz Institute for Solid State and Materials Research
1998-2004
University of the Ryukyus
1998-2003
Leibniz Association
2003
Archive of the Russian Academy of Sciences
1996-2001
University of the Ryukyus University Hospital
1998
In this paper we describe an experimental set-up for simultaneous measurements of thermopower and electrical resistivity at temperatures from 100 K to 1300 K. Optimal configuration electrodes original mechanical contacts thermocouples, current leads potential probes with the sample make it possible measure a large variety materials result in greater flexibility respect form dimensions. Both bulk thin film samples resistances range 0 Ω up 200 kΩ (1 GΩ case measurement) can be investigated....
Samples of indium-filled In<sub>x</sub>Co<sub>4</sub>Sb<sub>12</sub> skutterudite with ZT ∼ 1.5 were successfully synthesized by conventional induction melting without the use evacuated quartz ampoules.
Many efficient thermoelectric materials belong to the class of topological insulators. Therefore, in recent years considerable efforts have been made elucidate influence nontrivial electronic topology on properties thermoelectrics. This review describes basic transport helical surface states Their effect efficiency is discussed. The main attention paid (Bi,Sb) 2 (Te,Se) 3 alloys, which combine best thermoelectrics and a model insulator.
Abstract With years of development, SnTe as a homologue PbTe has shown great potential for thermoelectric applications in p ‐type conduction, and the most successful strategy is typified by alloying maximizing valence band degeneracy. Among known alloy agents, MnTe been found to be one effective enabling convergence an enhancement electronic performance SnTe, yet its solubility only ~15 at% unfortunately prevents full optimization structure. This work reveals that additional not promotes...
GeTe-based films have attracted tremendous attention from the thermoelectric community owing to their excellent performance. It is vital reduce hole density and maintain a high carrier mobility for GeTe films; however, this remains significant challenge. To overcome drawback, we succeeded in fabricating high-crystalline quality remarkably improve electrical properties using molecular beam epitaxy under low substrate temperature optimized Te/GeTe flux ratios. The Bi2Te3/GeTe double-layer...
Semimetals with certain crystal symmetries may possess unusual electronic structure topology, distinct from that of the conventional Weyl and Dirac semimetals. Characteristic property these materials is existence band-touching points multiple (higher than two-fold) degeneracy nonzero Chern number. CoSi a representative this group exhibiting so-called 'new fermions'. We report on an ab initio calculation using density functional methods, taking into account spin-orbit interactions. The...
The silicide family of thermoelectrics includes more than 15 compounds, among them are semimetals and semiconductors with band gaps ranging from 0.1 to 2.3 eV. silicides have obvious attractive features as the materials for thermoelectric energy converters. Many constituting elements abundant, low price, compounds good high temperature stability. Another feature silicides, much less recognized by community, is their compatibility silicon‐based microelectronic technology. It opens a door...
A dc method for thermopower (TP) measurements in magnetic fields up to 17 T the temperature range from 3 K 300 is introduced. special heating technique named ‘‘seesaw heating,’’ a similar ac methods, was developed and resulted good thermal stability, better accuracy faster procedure. Chromel–constantan thermocouples were utilized measuring probes because of small simple dependence field effect. Finding an empirical formula all calibration curves TP Chromel enable us measure at any...
The transport properties of intermetallic compounds RCo2 (R=Pr, Nd, Sm, Gd-Lu, Sc and Y) in the temperature range from 4.2 up to 1000 K were studied different contributions determined. In non-magnetic spin fluctuation contribution electrical resistivity, rho sf varies as (T/Tsf)2, thermal Wsf (T/Tsf), found follow theoretical predictions. disorder arising scattering conduction electrons on 4f moments was deduced be proportional de Gennes factor. It is shown that fluctuations are responsible...
High-purity single crystals are necessary to investigate the intrinsic properties of undoped β-FeSi2 in dependence on deviation from stoichiometric composition. Therefore, iron was prepared with high purity respect metallic as well non-metallic impurities and used initial material for growing by chemical vapour transport a closed system. By optimization whole preparation process crystal about 99.996% weight could be achieved. The content main electrically active elements lowered 20 wt ppm....
Resistivity $(\ensuremath{\rho})$ and thermopower (S) of spinel-type compounds ${\mathrm{CuIr}}_{2}{\mathrm{S}}_{4}$ ${\mathrm{CuIr}}_{2}{\mathrm{Se}}_{4}$ have been measured at temperatures from 2 to $900\mathrm{K}$ under magnetic field 0 $15\mathrm{T}.$ The is positive in the metallic phase both high temperatures, as well low-temperature insulating state ${\mathrm{CuIr}}_{2}{\mathrm{S}}_{4}.$ implies p-type charge carriers, agreement with recent photoemission results. resistivity good...
The principles and methods of thermopower electrical conductivity measurements at high temperatures (100 – 1000 K) are reviewed. These two properties define the so-called power factor thermoelect ric materials. Moreover, in combination with thermal they give efficiency thermoelectric conversion. In spite a principal obtained by different groups hinders realistic estimate potential new lack commonly accepted reference material for exaggerates problem. Therefore, it is very important to have...