A5059574147- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- Magnetic and transport properties of perovskites and related materials
- Phase-change materials and chalcogenides
- Solid-state spectroscopy and crystallography
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Topological Materials and Phenomena
- Advanced Thermoelectric Materials and Devices
- Magnetic properties of thin films
- Crystal Structures and Properties
- Heusler alloys: electronic and magnetic properties
- Physics of Superconductivity and Magnetism
- Quantum and electron transport phenomena
- Advanced Condensed Matter Physics
- Theoretical and Computational Physics
- Graphene research and applications
- 2D Materials and Applications
- Rare-earth and actinide compounds
- Electronic and Structural Properties of Oxides
- Optical properties and cooling technologies in crystalline materials
- Inorganic Chemistry and Materials
- Perovskite Materials and Applications
- Iron-based superconductors research
Polish Academy of Sciences
2016-2025
Institute of Physics
2016-2025
Czech Academy of Sciences, Institute of Physics
2006-2024
Wojewódzki Inspektorat Ochrony Środowiska w Warszawie
2018
Devi Ahilya Vishwavidyalaya
2002
Quantum Devices (United States)
2000
Northwestern University
2000
National Technical University "Kharkiv Polytechnic Institute"
2000
University of Warsaw
1999
Eindhoven University of Technology
1991-1993
The influence of charge-carrier concentration on the magnetic properties semimagnetic semiconductor [(PbTe${)}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$(SnTe${)}_{\mathrm{x}}$${]}_{1\mathrm{\ensuremath{-}}\mathrm{y}}$[MnTe] $_{\mathrm{y}}$ (x=0.72, y=0.03) is reported. Magnetization, susceptibility, and specific heat have been measured. For carrier concentrations below p=3\ifmmode\times\else\texttimes\fi{}${10}^{20}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$ alloy paramagnetic....
Topological crystalline insulators are materials in which the symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover existence of one-dimensional (1D) midgap at odd-atomic step edges three- dimensional topological insulator (Pb,Sn)Se. A minimal toy model and realistic tight- binding calculations identify as spin-polarized flat bands connecting two...
We study the nature of $(001)$ surface states in Pb${}_{0.73}$Sn${}_{0.27}$Se newly discovered topological-crystalline-insulator (TCI) phase as well corresponding topologically trivial state above band-gap-inversion temperature. Our calculations predict not only metallic with a nontrivial chiral spin structure for TCI case, but also nonmetallic (gapped) nonzero polarization when system is normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements...
We present angle-resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films Pb${}_{1\ensuremath{-}x}$Sn${}_{x}$Se, a three-dimensional topological crystalline insulator. observe with Dirac-like dispersion at $\overline{\ensuremath{\Gamma}}$ and $\overline{M}$ in Brillouin zone, supporting recent theoretical predictions for this family materials. study parallel isotropy Dirac-point binding energy states, perform tight-binding calculations to...
The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest bulk band inversion occurring these materials. Here we systematically study (001) surface states ${\text{Pb}}_{1\ensuremath{-}x}{\text{Sn}}_{x}\text{Se}$ mixed crystals by means angle-resolved photoelectron spectroscopy parameter space $0\ensuremath{\le}x\ensuremath{\le}0.37$ and...
Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route accomplish this was opened up by discovery crystalline (TCIs) where are protected real space crystal symmetries and thus prone formation structural changes lattice. Here, we show for first time temperature-driven opening within TCI phase (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, mass acquisition is...
Measurements of magnetization, magnetic susceptibility, specific heat, and Hall effect the ${\mathrm{Pb}}_{1\mathrm{\ensuremath{-}}\mathit{x}\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{Sn}}_{\mathit{x}}$${\mathrm{Mn}}_{\mathit{y}}$Te semimagnetic semiconductor (x=0.72, y=0.03 x=0.64, y=0.03) were performed in samples with different concentration carriers (p=8\ifmmode\times\else\texttimes\fi{}${10}^{19}$ to 1.4\ifmmode\times\else\texttimes\fi{}${10}^{21}$...
Zinc oxide nanopowders doped with 1–15 mol % cobalt were produced by the microwave solvothermal synthesis (MSS) technique. The obtained nanoparticles annealed at 800 °C in nitrogen (99.999%) and synthetic air. material nanostructure was investigated means of following techniques: X-ray diffraction (XRD), helium pycnometry density, specific surface area (SSA), inductively coupled plasma optical emission spectrometry (ICP-OES), extended absorption fine structure (EXAFS) spectroscopy, scanning...
We show that sputter-annealing a multicomponent topological material (Pb 1− x Sn Se) enables reversible tuning of the chemical potential while preserving its properties and achieving an atomically smooth surface.
Abstract Metal halide perovskite semiconductors have demonstrated remarkable progress not only in photovoltaics and X‐ray detection but also laser technologies. Particularly appealing is the simplicity with which micro‐crystallites can be epitaxially grown, thereby forming micro‐resonators suitable for lasing. Here, threshold optimized by selecting excitation parameters improving material quality. The latter process conducted formamidinium lead tribromide, emitting green spectral range....
The magnetic properties of multilayers ferromagnetic EuS intercalated with diamagnetic PbS were studied as a function the layer thickness (varying from 2 to 200 ML). critical temperature ${T}_{C}$ paramagnet-ferromagnet phase transition was determined magnetization vs measurements and found depend on underlying substrate [KCl (100) ${\mathrm{BaF}}_{2}$ (111)] well layer. For thick layers ${(d}_{\mathrm{EuS}}\ensuremath{\approx}200 \mathrm{ML}),$ which mimic semibulk EuS, values shifted...
The transition temperatures and phase diagram of a diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction are studied by extension the model Sherrington Southern. provides way to calculate distribution interactions in material. Some these distributions presented. Using mean width distributions, can be calculated. Furthermore, boundary separating ferromagnetic state from spin-glass determined. results compared experimental data obtained for...
The effect of the carrier concentration induced shift $g$ factor (the Knight shift) ${\mathrm{Mn}}^{2+}$ magnetic moment in PbTe and SnTe semiconducting matrices is experimentally observed different sign for $n$- $p$-type crystals. analysis this allows a straightforward determination both magnitude free carrier--local exchange integrals holes electrons PbTe, as well light heavy SnTe.
Antiferromagnetic coupling between ferromagnetic layers has been observed for the first time in all-semiconductor superlattice structure EuS/PbS(001), by neutron scattering and magnetization measurements. Spin-dependent band effects are invoked to explain possible origin strength of coupling.
Metal-halide-perovskites revolutionized the field of thin-film semiconductor technology, due to their favorable optoelectronic properties and facile solution processing. Further improvements perovskite devices require structural coherence on atomic scale. Such perfection is achieved by epitaxial growth, a method that based use high-end deposition chambers. Here growth enabled via ≈1000 times cheaper device, single nozzle inkjet printer. By printing, single-crystal micro- nanostructure arrays...
Polarized neutron reflectometry has been used to investigate details of spin ordering in ferromagnetic (FM) GaMnAs/GaAs superlattices. The reflectivity spectra measured below the Curie temperature reveal additional magnetic contributions structural superlattice Bragg peaks, clearly indicating existence FM interlayer correlations. Closer investigation maxima using a full polarization analysis provides direct evidence that order GaMnAs layers is truly long range. Moreover, as shown by data,...
Polycrystalline alloys of PbSe with rare-earth elements (Ce, Pr, Nd, Eu, Gd, and Yb) have been prepared their magnetic susceptibility (from 4 to 120 K), galvanomagnetic thermomagnetic transport 80 380 K) properties measured. Most samples are paramagnetic, the concentration atoms in lattice is deduced from fitting a Curie-Weiss law. The electrical conductivity, Hall, Seebeck, transverse Nernst-Ettingshausen effects interpreted terms carrier density mobility, states effective mass, scattering...
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core–shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated. (In,Ga)As core were at high temperature (500 °C) whereas (Ga,Mn)As shells deposited the {11̅00} side facets cores much lower (220 °C). High-resolution transmission electron microscopy images spectral resolution Raman scattering data show that both wurtzite crystalline structure. Scanning observations smooth...
Point-contact spectroscopy of several topological materials reveals a low-bias conductance peak with Bardeen-Cooper-Schrieffer criticality. However, no surface or bulk superconductivity accompanies these Andreev reflection type spectra. Here, the authors show, by studying Ag/Pb${}_{1\ensuremath{-}x\ensuremath{-}y}$Sn${}_{y}$Mn${}_{x}$Te junctions, that anomaly is immune to doping paramagnetic ferromagnetic Mn impurities. They assign low-temperature phase either superconducting...
Magnetic properties of ${\mathrm{Sn}}_{1\ensuremath{-}x}{\mathrm{Gd}}_{x}\mathrm{Te}$ semimagnetic semiconductor reveal a strong dependence antiferromagnetic exchange coupling between Gd spins on the concentration carriers. We present model explaining consistently both magnetic and transport SnGdTe as caused by resonant adjustment energy level ${5d}^{1}$ electron states Fermi level.