High-performance planar micromachined filters at 37 and 60 GHz are presented. The consist of a 3.5% bandwidth two-pole Chebyshev filter with transmission zeros GHz, 2.7% 4.3% four- five-pole an 8% elliptic GHz. Silicon micromachining techniques combined micropackaging have been applied to allow for very high-Q resonators resulting in low-loss filters. 37-GHz exhibits 2.3-dB port-to-port insertion loss. exhibit 2.8- 3.4-dB loss, the 1.5-dB These values show large reduction loss compared...

This paper presents the development of tunable filters using ohmic contact microelectromechanical system switches. It is shown that this type switch very well suited for fabrication low-loss high tuning-range microwave filters. Two sets Ku-band microstrip and resonators have been fabricated, with measured tuning ranges 20% 44%, unloaded quality factors better than 75 in all cases. The 2-bit 5.7% fractional bandwidth, bandpass exhibit insertion losses lower 3.2 dB states.

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by large change in electrical resistivity. Electrical switches based on this show promising properties terms of speed and broadband operation. The exploration the failure behavior reliability such devices very important view their integration practical electronic circuits. We performed systematic lifetime investigations two-terminal activation VO2 thin films....

This paper presents a tunable interdigital coplanar filter with tapped-line feedings. Microelectromechanical systems capacitors are used as high contrast capacitive switch between quarter-wavelength resonator and an open-ended stub to perform the frequency shift. A two-pole 13% relative bandwidth has been designed, fabricated, measured. The center can be switched from 18.5 21.05 GHz low return losses (less than 15 dB) insertion (3.5 dB).

This paper presents results on high lifetime RF microelectromechanical (RF-MEMS) dielectricless capacitive switches. Using air gap variation only, these MEMS switches achieve a capacitance ratio of 9, associated with small residual charging. The reliability the switch has been studied, pull-in and pull-out voltages shifts have observed, modeled validated good agreement between model measurements for held one month in down state. dependence charging mechanism to biasing signal is also...

This paper describes the realization and characterization of microwave 3-D printed loads in rectangular waveguide technology. Several commercial materials were characterized at X-band (8-12 GHz). Their dielectric properties extracted through use a cavity-perturbation method transmission/reflection method. A lossy carbon-loaded Acrylonitrile Butadiene Styrene (ABS) polymer was selected to realize matched load between 8 12 GHz. Two different types terminations realized by fused deposition...

We present a novel concept of microwave (MW) power-limiting devices based on reversible semiconductor-to-metal transition (SMT) vanadium-dioxide thin films integrated coplanar waveguides. designed, simulated, and fabricated devices, which can be reversibly driven from low-loss (<; 0.7 dB) transmission state into an attenuating (> 20 as the VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> material is changing semiconductor to metal when...

RF-MEMS technology permits practical implementations of high-Q (Q from 300 to over 1,000) tunable microwave filters with power handling in the >;1-10 W range, significant tuning range (>;50% 100%), and ultra-low consumption. Continuously frequency-tunable mechanical actuation opposite direction RF-inducted pressure can reach powers up several watts, using a variable compensation bias. Very high Q, large be achieved this technology, both planar cavity filters. Using devices parallel,...

This paper presents the fabrication and experimental results on a capacitive switch without dielectric. Using an appropriate design of switch, acceptable performances have been obtained with Con/Coff ratio around 10. The key advantage this is that dielectric charge trapping related failure modes are eliminated. An example shown measured intrinsic loss less than 0.3 dB at 15 GHz isolation better same frequency.

This paper presents an original approach for biological cell discrimination using impedance spectroscopy analysis at microwave frequency. method allows a label free really done the scale high frequency electromagnetic waves as non-invasive tool to probe intracellular medium. In this work, biosensor sensitivity has been especially enhanced thanks appropriated design based on resonant sensor. way, small wave interaction with micrometric objects can be accurately detected. concept...

This paper presents extremely compact single-pole multiple-throw radio frequency (RF) microelectromechanical system switches, SP7T and SP11T, based on a symmetric circular switch topology. The dimensions are 0.61 mm ×0.61 mm, which is smaller than typical CMOS Si-on-insulator switches. SP11T insensitive to stress gradient effects, achieve simulated contact restoring forces of 0.3-0.4 mN (per switch) at 90-100 V. switches also isolation levels 50-19 dB 50-17 dB, respectively, insertion loss...

This paper presents the design, fabrication and characterization of Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Te Sb xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> -based phase change material RF switches. The exhibits non-volatile reversible amorphous to crystalline with resistivity changes up 105 orders magnitude. Being non-volatile, these switches do not require permanent bias be maintained in a given state. We present...

This paper describes the design and realization of two membrane supported microstrip millimeter-wave planar bandpass filters. Both filters exhibit transmission zeros a 2.3 dB port-to-port insertion loss for 37 GHz 3.5% bandwidth 2-pole filter 1.5 60 8% 4-pole filter. The use technology allows significant reduction loss, combined with reproducible, low cost fabrication process.

This paper presents the fabrication processes for micromachined millimetre-wave devices, on two different types of semiconductor substrates. The first process uses micromachining high-resistivity < 100> oriented silicon. A three-layer dielectric membrane, with a total thickness 1.5 µm is used as support structures. was manufacturing coupled line filters, central operating frequencies 38 and 77 GHz, respectively. second based GaAs micromachining. For time, 2.2 thin GaAs/AlGaAs obtained by...

This paper deals with a tunable bandpass filter topology which controls independently and simultaneously both the central frequency bandwidth. results from association of MEMS cantilevers, used as variable capacitors, an original passive topology. The latter is based on dual behavior resonators (DBRs), each them constituted low- high-frequency open-ended stubs. associated electrical response characterized by transmission zeros. A millimeter relative bandwidth tunability about 10 75%,...

Distributed microelectromechanical varactors on a coplanar waveguide have been used to design two- and four-pole bandpass tune-all filters. The two-pole initial bandwidth is 6.4% at 44.05 GHz with mid-band insertion loss of 3.2 dB matching better than 15 dB. 6.1% 43.25 6.5 10 use system bridges allows continuous tuning for both center frequency bandwidth. biasing network has designed so that the can be tuned separately. filter changed from 41.55 (5.6% range), while independently 2.8 2.05...

This paper presents a wideband ohmic shunt switch implemented on coplanar waveguide (CPW). The is fabricated using dielectric membrane with patterned metallic contacts that short the CPW line when it electrostatically actuated. has been extrapolated from measurements. It exhibits low insertion loss, good matching, high isolation DC to W band (>20 dB up 100 GHz) and very mechanical properties switching time <1/spl mu/s.

Switches <xref ref-type="bibr" rid="ref1" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1]</xref> are basic building blocks of many radio frequency (RF) and microwave subsystems. For instance, they widely used in cell phones, telecom infrastructures, test equipment, antenna systems, communications at large. These devices to route RF signals from one port another, with as little perturbation possible the signal. Insertion loss, port-to-port...

Dielectric charging is one of the most challenging issues in RF-MEMS capacitive switches. less switch shown with a measured on to off ratio 9. The reliability has been studied and residual pull voltage shift observed. For first time, results are presented this type validated up month. It shwon that can be modeled using simple Curie-Von Schweidler equation. This model validated, good agreement between coefficients determined after holding down for about 10000 s, further experimenal month state.

We present the design, simulation and fabrication of innovative tunable band stop filters realized using switching devices based on fast, reversible Metal-Insulator Transition vanadium dioxide thin films. The are designed to operate in 11–13 GHz frequency range consists a transmission line coupled with four U-shaped resonators. developed two types VO2 switches integration namely “switchable filter” for which rejection can be switched off “discrete stop-band width position stopband discretely tuned.

This paper presents a 14 GHz high-Q (quality factor) tunable resonator using microelectromechanical system (MEMS) varactors. A brass surface mountable cavity has been bonded on fused silica wafer which are processed three 1.1 mm long MEMS Their location optimized in order to obtain wide frequency shift, when the cantilevers actuated substrate. 15% tuning range from 11.9 14.2 obtained with continuous shift 13.6 GHz. Measurements result an average unloaded quality factor ( <i...

This letter presents the implementation of an integrated bias circuit for controlling heating and cooling a phase-change material (PCM) switch. By integrating parallel capacitance to ground on heater circuit, we show that proposed design reduces influence probes switch response. The measured insertion loss is less than 1 dB up 28 GHz, experimentally this improves isolation by more 8.5 dB, as expected from simulations.

This paper presents first experimental results on high Q MEMS tunable microwave cavity using RF-MEMS switched varactors. varactors that have been used in this work are based a dielectric less cantilever actuator, with good reliability and well-established fabrication process. It is shown one can obtain large type of component, measured <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">u</inf> between 550 850 for tuning range 500 MHz around 5 GHz.

In this paper, we present the design, fabrication and characterization of first tunable bandpass filter that combines split ring resonators (SRRs) vanadium dioxide (VO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> )-based microwave switches. The device consists on a pair coupled SRRs, feed by means tapped microstrip lines, can be connected to metallic patches electronically activating VO -based Through fast reversible...

It is shown that radiofrequency micro-electromechanical-system (RF-MEMS) switches are useful to implement electronically reconfigurable split ring resonators (SRRs). Three different combinations of cantilever-type ON/OFF capacitive with SRRs studied for the design tunable or switchable SRR-loaded metamaterial transmission lines. These structures then applied band stop and pass filters at X-frequency band. Through electrostatic actuation switches, resonance frequency can be shifted and, as a...