A5051401626- Microwave Engineering and Waveguides
- Advanced MEMS and NEMS Technologies
- Acoustic Wave Resonator Technologies
- Advanced Antenna and Metasurface Technologies
- Photonic and Optical Devices
- Magneto-Optical Properties and Applications
- Antenna Design and Analysis
- Microwave and Dielectric Measurement Techniques
- Near-Field Optical Microscopy
- Semiconductor Lasers and Optical Devices
- Metamaterials and Metasurfaces Applications
- Radio Frequency Integrated Circuit Design
- 3D IC and TSV technologies
- Nonlinear Photonic Systems
- Magnetic properties of thin films
- Advanced Fiber Optic Sensors
- Mechanical and Optical Resonators
- Advanced Fiber Laser Technologies
- Gyrotron and Vacuum Electronics Research
- Electromagnetic Compatibility and Noise Suppression
- Force Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Antenna Design and Optimization
- Photonic Crystals and Applications
- Electrical and Thermal Properties of Materials
Institute of Structure of Matter
2007-2024
Institute for Microelectronics and Microsystems
2015-2024
National Research Council
1996-2024
National Institute for Research and Development in Microtechnologies
2002-2019
National Academies of Sciences, Engineering, and Medicine
2005-2015
University of Rome Tor Vergata
2007-2015
Consorzio Roma Ricerche
2014
Istituto Centrale per la Ricerca Scientifica e Tecnologica Applicata al Mare
2006
Confederazione Nazionale dell'Artigianato e Della Piccola e Media Impresa
1990-2003
Centro di Ricerca per la Patologia Vegetale
2001
The linearity of the power response yttrium iron garnet films to a microwave pulse having length shorter than delay time characteristic specimen is investigated. In particular, threshold found above which output increases with respect standard linear trend. novel effect, analyzed in some detail on five epilayers different thicknesses, cannot be explained terms usual nonlinear processes. An interpretation soliton excitation, accounting for existence system both intrinsic nonlinearity and...
The capability of scanning microwave microscopy for calibrated sub-surface and non-contact capacitance imaging silicon (Si) samples is quantitatively studied at broadband frequencies ranging from 1 to 20 GHz. Calibrated images flat Si test with varying dopant density (1015–1019 atoms cm−3) covered dielectric thin films SiO2 (100–400 nm thickness) are measured demonstrate the sensitivity (SMM) imaging. Using standard SMM conditions areas could still be sensed under a 400 thick oxide layer....
This paper proposes a detailed design study of resonating high-frequency notch filters driven by RF MEMS switches and their optimization for dual-band operation in the X-Band. Microstrip configurations will be considered single applications. An SPDT (single-pole-double-thru) switch composed double-clamped ohmic microswitches has been introduced to connect triangular resonators with Sierpinski geometry, symmetrically placed respect microstrip line obtain dual response. Close frequencies or...
U-shaped microwave resonators implemented by RF MEMS switches can be considered the result of a novel design approach for obtaining small-footprint tunable resonators, owing to bent shape resonator and microsystem solution changing frequency resonance. In this paper, we discuss potential configurations structures combined with ohmic switches. Owing their prospective application in RADAR satellite systems, devices were assessed K-Band operation, specifically 15 GHz, 20 26 GHz. The ON-OFF...
This paper presents the fabrication processes for micromachined millimetre-wave devices, on two different types of semiconductor substrates. The first process uses micromachining high-resistivity < 100> oriented silicon. A three-layer dielectric membrane, with a total thickness 1.5 µm is used as support structures. was manufacturing coupled line filters, central operating frequencies 38 and 77 GHz, respectively. second based GaAs micromachining. For time, 2.2 thin GaAs/AlGaAs obtained by...
This paper describes different variants of broadband and simple attenuator modules for beamforming applications, based on radio frequency micro electro-mechanical systems (RF-MEMS), framed within coplanar waveguide (CPW) structures. The proposed in the first part this work differ their actuation voltage, topology, desired attenuation level. Fabricated samples basic 1-bit modules, characterized by a moderate footprint 690 × 1350 µm2 aiming at levels −2, −3, −5 dB 24.25–27.5 GHz range, are...
We present a comprehensive analysis of the imaging characteristics scanning microwave microscopy (SMM) system operated in transmission mode. In particular, we use rigorous three-dimensional finite-element simulations to investigate effect varying permittivity and depth sub-surface constituents samples, on scattering parameters probes made metallic nano-tip attached cantilever. Our results prove that one can achieve enhanced sensitivity mode SMM (TM-SMM) configuration, from twofold as much 5×...
A broadband single pole double throw (SPDT) switch has been developed for use in the range of 0 to 30 GHz. The consists a cascade MEMS ohmic series and capaci-tive shunt with floating electrode each branch. It is manufactured on high-resistive silicon using surface micro-machining technology. SPDT provides an insertion loss better than -0.6 dB, return smaller -20dB, isolation -40 dB nearly whole band. switching voltage around 50 V needed. used as building block more complex networks....
A small-size zeroth-order resonating antenna based on a composite right/left-handed transmission line (CRLH TL) fabricated high resistivity silicon substrate using coplanar waveguides (CPW) is proposed. The CRLH TL consists of series CPW interdigital capacitors and parallel short-ended CPWs. predicted experimental results for return loss, gain radiation pattern are in very good agreement.
Shunt capacitive RF MEMS switches have been developed using III-V technology and employing (tantalum pentoxide) Ta 2 O 5 thin films as dielectric layers. In order to evaluate the potential of for considered application, compositional, structural, electrical characterization deposited has performed, demonstrating that they are good candidates be used layers fabrication switches. Specifically, found show a leakage current density few nA/cm for<mml:math...
The charging of the dielectric used for actuation in microelectromechanical system (MEMS) devices is one major failure sources switches based on this technology. For reason, a better understanding such an effect vital to improve reliability both ground and space applications. In paper, expected response MEMS unipolar bipolar dc voltages has been measured modeled. Two configurations switches, namely, Ohmic series shunt capacitive designed microwave applications, have studied as test vehicle...
In this paper, a circuit model to predict the microwave response of shunt-connected capacitive microelectromechanical coplanar switch is proposed. The numerical values lumped elements composing equivalent are computed by means fully analytic approach. particular, contribution resistive and inductive parasitic has been evaluated using closed-form expressions. Configurations characterized different technological solutions have obtained modeled. Simulations performed with proposed approach...
Experimental results obtained for a binary distributed phase shifter based on RF MEMS coplanar shunt switches are presented. A new approach the image parameter representation of two-port networks is proposed modelling this structure. Vector network analyser measurements have been performed by recording scattering parameters device, obtaining differential shift 180° at frequency f0 = 13.7 GHz, very close to theoretical one ftheo=14 GHz. low number has used realisation component.
A review of the design criteria for magnetostatic volume wave band-pass resonating filters will be presented. The prediction radiation resistance and reactance microstrip lines coupled to magnetic films in grounded configurations used model straight edge resonators by means lumped elements. As an application, performances tunable single multiple stage narrow-band working at X-band evaluated.
The paper illustrates the activity carried out under an ESA contract for development of a miniaturized RF-MEMS SPDT switch and matrix using micromachining technology on silicon substrate power applications. A manufacturing procedure, based eight masks process, has been set up. At present, broadband single-pole-double-throw (SPDT) operating in 0-30 GHz frequency range fabricated measured. Isolation about -40 dB insertion loss better than -0.7 have obtained.
Abstract —This paper deals with a general analytic approach for the design of RF microelectromechanical system (MEMS) switches. The chosen configuration these microwave devices is composed twocoplanar transmission line sections separated by metal membrane providing shunt connected variable impedance. Using bias voltage it possible to actuate switch. adopted methodology development circuital model based on image impedance parameter representation two-port network. Synthesis equations are...