A5045270561- Near-Field Optical Microscopy
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Force Microscopy Techniques and Applications
- Microwave and Dielectric Measurement Techniques
- Semiconductor Quantum Structures and Devices
- Advanced Electron Microscopy Techniques and Applications
- Advanced Optical Network Technologies
- Microwave Engineering and Waveguides
- Superconducting and THz Device Technology
- Interconnection Networks and Systems
- Photonic Crystals and Applications
- Wireless Communication Networks Research
Keysight Technologies (Austria)
2015-2018
Keysight Technologies (United Kingdom)
2016
Microwave microscopy enables three-dimensional characterization of atomically thin semiconductor structures with nanometer precision.
A new method to probe the resistivity and dopant concentration of semiconductors with nanoscale resolution using SMM is presented.
The capability of scanning microwave microscopy for calibrated sub-surface and non-contact capacitance imaging silicon (Si) samples is quantitatively studied at broadband frequencies ranging from 1 to 20 GHz. Calibrated images flat Si test with varying dopant density (1015–1019 atoms cm−3) covered dielectric thin films SiO2 (100–400 nm thickness) are measured demonstrate the sensitivity (SMM) imaging. Using standard SMM conditions areas could still be sensed under a 400 thick oxide layer....
The application of scanning microwave microscopy (SMM) to extract calibrated electrical properties cells and bacteria in air is presented. From the S11 images, after calibration, complex impedance admittance images Chinese hamster ovary E. coli deposited on a silicon substrate have been obtained. broadband capabilities SMM used characterize bio-samples between 2 GHz 20 GHz. resulting cell at 19 were Ycell = 185 μS + j285 Ybacteria 3 j20 μS, respectively. A combined circuitry-3D finite...
A calibration algorithm based on one-port vector network analyzer (VNA) for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust versatile instrument frequency independent, as we demonstrate by analyzing experimental data two different, cantilever- tuning fork-based, microscope setups operating in wide range up 27.5 GHz. To benchmark the SMM results, comparison with secondary...
Broadband dS11 /dV dopant profiling at gigahertz frequencies and in situ calibrated capacitance-voltage spectroscopy of silicon p-n junctions using scanning microwave microscopy (SMM) are reported. Using a 3-D finite element model to obtain the E-field distribution tip/sample interface, we show that reflected S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> signal is expected vary monotonically with doping concentration. imaging...
Reflection mode scanning microwave microscopy (SMM) is compared to a newly developed transmission imaging hardware for extended scattering S11 and S12 measurements. Transmission realized by an SMA connector placed below the sample excite electromagnetic wave towards cantilever acting as nanoscale-sized receiver structure. The frequency response was investigated between 1–20 GHz circuitry model of SMM matching network combined with 3D finite element tip-sample system. Modeling results include...
The paper presents an experimental study aiming to highlight the potential of scanning microwave microscopy (SMM) as a non-destructive high precision characterization tool for SOI technology. Two identical wafers having passivated and non-passivated top Si film surfaces have been assessed. Differential measurements were found capable detecting differences in structures two samples. results support conclusion that, after appropriate calibration method, SMM may provide powerful offering nm scale
A methodology towards de-embedding contact mode scanning microwave microscopy (SMM) reflection measurements is presented. calibration standard that consists of differently doped stripes required, while the coefficient amplitude |S11|, modeled and analyzed in linear scale, instead commonly adopted dB scale. This allows straightforward experimental determination important parameters such as effective tip radius magnitude stray capacitances. Values 145 nm 22 fF have been obtained respectively....
We quantitatively image the doping concentration and capacitance of a high-voltage lateral metal-oxide-semiconductor transistor device with channel length 0.5 μm at 20-GHz frequency using scanning microwave microscopy (SMM). The is embedded in deep n-well forming flat pn-junction p-substrate, shape resolved SMM images. Calibrated dC/dV imaging revealed values range 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> -10...
The paper presents a calibration of scanning microwave microscopy signals for doping profiling in MOS systems. experimentally obtained S-parameters are matched through linear relation to the calculated system capacitance and then doping. proposed approach is verified by simulations with equivalent LCR circuit as well experimental results on sample differently doped areas.