A5056282791- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Metal and Thin Film Mechanics
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Optical Coatings and Gratings
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
- Electron and X-Ray Spectroscopy Techniques
- Advanced ceramic materials synthesis
- Photonic and Optical Devices
- Optical Polarization and Ellipsometry
- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Surface Roughness and Optical Measurements
- Chalcogenide Semiconductor Thin Films
- Phase-change materials and chalcogenides
- Quantum Dots Synthesis And Properties
- Silicon and Solar Cell Technologies
- Nanowire Synthesis and Applications
- Anodic Oxide Films and Nanostructures
CEA LETI
2016-2025
Université Grenoble Alpes
2016-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025
CEA Grenoble
2016-2025
Institut polytechnique de Grenoble
2014-2024
John Wiley & Sons (United Kingdom)
2021
Interface (United Kingdom)
2021
University of East Asia
2021
John Wiley & Sons (United States)
2021
Direction de la Recherche Technologique
2007-2017
GaN-based micro light-emitting diode (μLED) arrays are very promising devices for display applications. In these arrays, each μLED works as a single pixel of whole image. The electro-optical performance μLEDs is an important subject to study. Here, we investigate the influence LED size on radiative and non-radiative recombination. standard ABC model has been widely used describe efficiency GaN based LEDs. Using this model, extract A, B, C coefficients various sizes, showing how competition...
We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, their evolution after annealing under vacuum. Doping with atoms increases carrier density but also favors formation Zn vacancies, thereby inducing a saturation conductivity mechanism at high aluminum content. The electrical these layered materials are both improved process which creates oxygen vacancies that releases charge carriers thus...
Herein, the linear and nonlinear optical properties, together with remarkable thermal stability structural properties of thin films nitrogen‐doped GeSe 1− x Te chalcogenide materials, are unveiled. These alloys obtained by reactive magnetron cosputtering technique in a 300 mm wafer industrial tool, they promising candidates for high‐temperature nonvolatile resistive memories due to unprecedented crystallization temperatures among all known congruent phase‐change materials (PCMs). Besides,...
Abstract Tip enhanced Raman spectroscopy (TERS) and imaging experiments in tunnelling (gap) mode were performed on a 2 nm thick azobenzene thiol monolayer grafted Au(111). A strong dependence the parameters, regulating gold tip–gold surface gap distance, was observed for intensity of signal. The influence incident light polarization is also discussed. Copyright © 2009 John Wiley & Sons, Ltd.
In this paper the concept hybrid CBRAM assisted by oxygen vacancies is presented for 1 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">st</sup> time. Doping resistive layer of oxide/Cu based with < dopant species and concentrations proposed in order to improve memory performances. By means experimental characterizations, numerical model atomistic calculations, we demonstrate that increasing doping content ease filament formation facilitating Cu...
Today, to our knowledge, only two techniques are used perform GeOI substrates: the Smart-Cut™ technique and Ge condensation technique. The latter is very sensitive initial parameters but one which allows Si Ge-on-insulator co-integration. Predictions of experimental results then necessary associate best processes with defined starting structures. This paper presents for first time studies on simulations. Enrichment kinetics occurring in classical one-dimensional process have been simulated...
The fabrication of interconnects in integrated circuits requires the use porous low dielectric constant materials that are unfortunately very sensitive to plasma processes. In this paper, authors investigate etch mechanism fluorocarbon-based plasmas oxycarbosilane (OCS) copolymer films with varying porosity and constants. They show behavior does not depend on material structure is disrupted by ion bombardment during process. smaller pore size increased carbon content OCS minimize...
This paper presents the fabrication and characterization of a biaxial MEMS (MicroElectroMechanical System) scanner based on PZT (Lead Zirconate Titanate) which incorporates low-absorption dielectric multilayer coating, i.e., Bragg reflector. These 2 mm square mirrors, developed 8-inch silicon wafers using VLSI (Very Large Scale Integration) technology are intended for long-range (>100 m) LIDAR (LIght Detection And Ranging) applications W (average power) pulsed laser at 1550 nm. For this...
We characterized two samples consisting of photoresist layers on silicon with square arrays holes by spectroscopic ellipsometry (SE) and Mueller matrix polarimetry (MMP). Hole lateral dimensions depths were determined fitting either SE data taken in conventional planar geometry or MMP general conical diffraction configurations. A method for objective determination the optimal measurement conditions based sensitivity parameter correlations is presented. When applied to MMP, this approach...
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe2 15 × mm mica in the van der Waals regime. By screening one-step growth conditions, find that high temperature (>900 °C) low deposition rate (<0.15 Å min-1) are necessary obtain quality films. domain size can be as 1 µm in-plane rotational misorientation 1.25°. monolayer also robust against air...
The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition matrix and a sacrificial organic phase (porogen), postcuring treatments may be used create porosity by evaporation porogen. In this paper, Auger electron spectroscopy is performed simultaneously modify material (e-beam cure) measure corresponding changes in structure chemical...
Abstract Mixed thiol self‐assembled monolayers (SAMs) presenting methyl and azobenzene head groups were prepared by chemical substitution from the original single‐component n‐ decanethiol or [4‐(phenylazo)phenoxy]hexane‐1‐thiol SAMs on polycrystalline gold substrates. Static contact‐angle measurements carried out to confirm a change in hydrophobicity of functionalized surfaces following exchange reaction. The mixed presented values between those more hydrophobic hydrophilic SAMs. By means...
In this paper, we have studied the charge trapping mechanisms of nitride-based non-volatile memories. The impact different silicon-nitride (SiN) compositions (standard, std, and Si-rich) on device characteristics has been investigated through material characterizations, electrical measurements, atomistic simulations. We found that physical nature dominant defects in two SiN is at origin behaviors. particular, argue electron occupation number defect states materials explains observed faster...
We study the effective metal gate work function (WF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Meff</sub> ) of different metal/high-κ stacks. Both capacitance versus voltage measurement and internal photo emission were used, leading to a better understanding WF variations. demonstrate that these variations are related two main process dependent parameters, drop at high- κ/SiO xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface...
A calibration algorithm based on one-port vector network analyzer (VNA) for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust versatile instrument frequency independent, as we demonstrate by analyzing experimental data two different, cantilever- tuning fork-based, microscope setups operating in wide range up 27.5 GHz. To benchmark the SMM results, comparison with secondary...
The automation of liquid-handling routines offers great potential for fast, reproducible, and labor-reduced biomaterial fabrication but also requires the development special protocols. Competitive systems demand a high degree in miniaturization parallelization while maintaining flexibility regarding experimental design. Today, there are only few possibilities automated biomaterials inside multiwell plates. We have previously demonstrated that streptavidin-based biomimetic platforms can be...
The optoelectronic properties of a fully processed red emitting AlGaInP micro-diode device is measured using standard I-V and luminescence measurements. A thin specimen then prepared for in situ transmission electron microscopy analysis by focused ion beam milling, the changes electrostatic potential as function applied forward bias voltage are mapped off-axis holography. We demonstrate that quantum wells diode sit on gradient until threshold light emission reached; at which point aligned...
This work focuses on the impact of oxidizing (O2) and reducing plasma ashing chemistries (NH3, CH4) modifications dielectric materials in a porous or an hybrid state (SiOCH matrix+porogen). The processes have been performed blanket wafers using O2, NH3, CH4 based plasmas. remaining film after exposures investigated different analysis techniques such as x-ray photoelectron spectroscopy, infrared reflectometry, porosimetric ellipsometry. For material authors shown that NH3 O2 plasmas induce...