A5028313712- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Electronic and Structural Properties of Oxides
- Quantum and electron transport phenomena
- Semiconductor Lasers and Optical Devices
- Full-Duplex Wireless Communications
- ZnO doping and properties
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Ultrasonics and Acoustic Wave Propagation
- Molecular Junctions and Nanostructures
- Surface and Thin Film Phenomena
- Antenna Design and Optimization
- Semiconductor materials and interfaces
- Welding Techniques and Residual Stresses
- Economic Theory and Policy
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- GaN-based semiconductor devices and materials
- Global trade and economics
- Physics of Superconductivity and Magnetism
Centre National de la Recherche Scientifique
2018-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2023-2025
Université Grenoble Alpes
2023-2025
CEA Grenoble
2023-2025
CEA LETI
2023-2025
Institut polytechnique de Grenoble
2023-2025
Université de Bretagne Occidentale
2020-2024
Laboratoire des Sciences et Techniques de l’Information de la Communication et de la Connaissance
2024
École nationale supérieure de techniques avancées Bretagne
2020-2024
Institut Pascal
2018-2023
Abstract For cryogenic systems, the development of superconducting interconnects is nowadays essential to reach large-scale integration schemes while addressing associated challenges signal dispersion and cross talk as well thermal management. To achieve with micrometer potentially sub-micrometer pitches, we investigate wafer-to-wafer direct bonding Nb pads, using 200 mm processes developed for Cu/SiO2 hybrid routing levels. Contrarily standard bonding, pads these are surrounded by air...
III‐V light‐emitting diodes (LEDs) have been attracting much interest due to their ability cover a large spectrum of interesting wavelength for various applications. However, incompatibility with integration on Si platforms compatible complementary metal‐oxide‐semiconductor standards makes high mass production challenging task. Herein, the fabrication 940 nm micro‐LED 300 mm wafers is reported. The active zone based InGaAs/AlGaAs multiquantum wells epitaxially grown by metal–organic chemical...
The incorporation of Si into vapor-liquid-solid GaAs nanowires often leads to p-type doping, whereas it is routinely used as an n-dopant planar layers. This property limits the applications in electronic and optoelectronic devices. strong amphoteric behavior not yet fully understood. Here, we present first attempt quantify this a function droplet composition temperature. It shown that doping type critically depends on As/Ga ratio droplet. In sharp contrast vapor-solid growth, contains very...
Au droplets are used as a catalyst for the growth of nanowires on Si(111) substrate via vapor–liquid–solid (VLS) mechanism. The dewetting thin film is most common method to obtain these droplets. control this step crucial adjust density and diameter during VLS growth. When covered with silicon dioxide layer, kinetics droplet formation strongly modified. dependence spatial distribution surface have been studied by scanning electron microscopy respect thickness temperature deposition...
Controllable doping of III–V nanowires grown by the vapor–liquid–solid method remains a challenging task. In sharp contrast to planar layers same materials, dopants mainly incorporate into through catalyst droplet. We present thermodynamic theory process in nanowires, which provides explicitly level versus nominal doping, material fluxes, and temperature. It is shown that directly related growth conditions strongly depends on epitaxy technique used grow nanowires. analyze experimental data...
Despite the unavoidable presence of silicon atoms in catalyst alloy droplets during vapor–liquid–solid growth III–V nanowires on substrates, it remains unknown how nucleation is affected by these foreign atoms. In this work, we present first attempt to quantify nanowire rate versus concentration droplet. We calculate chemical potential difference per Ga–As pair quaternary Au–Ga–As–Si liquid droplet and solid state, compare ternary Au–Ga–As without silicon. This allows us compute rates GaAs...
Developing hybrid bonding technology is a key challenge for fine pitch 3D integrations, enabling high performances and reliability. For the realization of interconnects in integration, copper grain engineering an important parameter to consider order achieve with reduced thermal budget (typically below 200°C), allowing new devices co-integration. Main challenges good at copper-copper interface are diffusion, optimized coefficient expansion resistivity that remains low. Nanocristalline...
Based on a thermodynamic model, we quantify the impact of adding silicon atoms to catalyst droplet nucleation and growth ternary III–V nanowires grown via self-catalyzed vapor–liquid–solid process. Three technologically relevant ternaries are studied: InGaAs, AlGaAs InGaN. For As-based alloys, it is shown that increases nanowire probability, which can increase by several orders magnitude depending initial chemical composition catalyst. Conversely, found suppress rate InGaN different...
It is well known that chemical potential driving the vapor–liquid–solid growth of nanowires oscillates in synchronization with monolayer growth. In III–V nanowires, this occurs due to depletion group V atoms a catalyst droplet. The amphoteric behavior silicon doping, which often changes from n‐type planar GaAs layers p‐type attributed low arsenic concentrations. Herein, we present an analytical model quantifies doping oscillations over formation cycle, and its impact on electron‐to‐hole...
Abstract The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. surface morphology the NWs was characterized by high resolution transmission electron microscopy (HRTEM) angle annular dark field (HAADF) imaging. Electron energy loss spectroscopy (EELS) confirmed presence on NW surface. Micro-photoluminescence ( μ -PL) single indicated an increase luminescence intensity upon passivation. This...
It is well-known that chemical potential driving the vapor-liquid-solid growth of semiconductor nanowires strongly affected by liquid phase composition.Here, we investigate theoretically how droplet composition influences nucleation Au-catalyzed GeSn on Ge(111) and Si(111) substrates.We compare potentials in an Au-Ge-Sn catalyst before after adding Ga and/or Si atoms.It found presence these atoms enhances rate both substrates.Theoretical results are compared to experimental data grown...
III-V nanowires grown by the vapor-liquid-solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over monolayer growth cycle. We investigate theoretically how this effect influences electron-to-hole ratio Si-doped GaAs nanowires. Several factors influencing As depletion nanowire are considered, including time-scale separation between steps island and refill, "stopping effect" at very low concentrations, maximum nucleation desorption. It is shown...
We report for the first time on hydride vapor phase epitaxy (HVPE) growth of long (26 μm) InAs nanowires Si(111) substrate. The thermodynamic and kinetic mechanisms involved during such are identified.
The integration of III-V compound semiconductors on a silicon platform has emerged as transformative approach to enhance the performance and functionality photonic optoelectronic devices. This paper presents recent achievements, challenges, future prospects GaAs monolithic with specific focus in development near-infrared (NIR) emitters photodetectors. We address challenges associated its compatibility CMOS processes. These include lattice mismatches, thermal management, process scalability....
Controlled growth of In-rich InGaN nanowires/nanorods (NRs) has long been considered as a very challenging task. Here, we present the first attempt to fabricate NRs by selective area using hydride vapor phase epitaxy. It is shown that with different indium contents up 90% can be grown varying In/Ga flow ratio. Furthermore, nanowires are observed on surface density proportional Ga content. The impact NH3 partial pressure investigated suppress these nanowires. nanowire considerably reduced...
We have investigated charge and spin transport in $n$-type metallic GaAs nanowires ($\ensuremath{\approx}{10}^{17}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ doping level) grown by hydride vapor phase epitaxy (HVPE) on Si substrates. For this level, might appear difficult because of the expected localization minority holes valence band potential fluctuations generated statistical donor concentration. In contrast with these expectations, it is found, using spatially spectrally...
We report on the influence of liquid droplet composition Sn incorporation in GeSn nanowires (NWs) grown by vapor-liquid-solid (VLS) mechanism with different catalysts. The variation NW growth rate and morphology temperature is investigated 400 °C identified as best to grow longest untapered NWs a 520 nm min-1. When are pure Au droplets, we observe core-shell like structure low concentration less than 2% core regardless temperature. then investigate impact adding fractions Ag, Al, Ga Si...
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, long-distance tail appears the luminescence spatial profile, indicative of transport, only limited by length NW. This is independent on excitation power temperature. Using self-consistent calculation based drift-diffusion Poisson equations as well statistics (Van Roosbroeck model), it found that this...
We have used a polarized spatially resolved microluminescence technique to investigate photocarrier charge and spin transport at 6 K in GaAs nanowire (NW; n-type doping level $\ensuremath{\approx}{10}^{17}\phantom{\rule{0.28em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$). Because of the difference expansion coefficients NW its ${\mathrm{SiO}}_{2}$ substrate, is under strain, as revealed by splitting between light- heavy-hole emissions luminescence intensity spectrum. Light valence levels lie...
The last twenty years have shown an impressive increase of the number connected objects. Grouped under generic term Internet Things (IoT), those devices are based on data acquisition, analysis, transfer and storage. In today's fast-paced industry, demand for more intelligent, efficient, secure electronic is growing steadily. Electronic chips that can support advanced functionalities such as artificial intelligence, machine learning, analytics crucial to meeting these demands. All developed...