A5001164854- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Magnetic Properties and Applications
- 2D Materials and Applications
- Surface and Thin Film Phenomena
- Theoretical and Computational Physics
- Graphene research and applications
- Physics of Superconductivity and Magnetism
- Magnetic Properties of Alloys
- Semiconductor materials and devices
- Topological Materials and Phenomena
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- nanoparticles nucleation surface interactions
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Radio Frequency Integrated Circuit Design
- Advanced Materials Characterization Techniques
- Advanced Memory and Neural Computing
- Advanced Electron Microscopy Techniques and Applications
- Quantum Dots Synthesis And Properties
- Characterization and Applications of Magnetic Nanoparticles
- MXene and MAX Phase Materials
- Copper Interconnects and Reliability
CEA Grenoble
2016-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025
Spintronique et Technologie des Composants
2016-2025
Centre National de la Recherche Scientifique
2009-2024
Université Grenoble Alpes
2015-2024
Institut polytechnique de Grenoble
2012-2023
Institut Nanosciences et Cryogénie
2009-2018
Laboratoire d'Ingénierie des Systèmes Biologiques et des Procédés
2018
Université de Toulouse
2018
Institut National des Sciences Appliquées de Toulouse
1992-2018
A large electric field at the surface of a ferromagnetic metal is expected to appreciably change its electron density. In particular, metal's intrinsic magnetic properties, which are commonly regarded as fixed material constants, will be affected. This requires, however, that has strong influence on material's case with ultrathin films. We demonstrated magnetocrystalline anisotropy ordered iron-platinum (FePt) and iron-palladium (FePd) intermetallic compounds can reversibly modified by an...
Small magnetic domains (70 nm) have been observed by force microscopy in ordered FePd thin films grown molecular-beam epitaxy. The layers exhibit a perpendicular anisotropy induced uniaxial ${\mathrm{L}1}_{0}$ [CuAu(I)-type] chemical ordering. magnetization curves show that the easy axis is to film plane and their interpretation with micromagnetic model leads correct size of domains.
Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such novel compound, SPtSe, predicted to exhibit strong Rashba spin-orbit coupling. We synthetized it by conversion of PtSe$_2$ on Pt(111) via sulphurization under H$_2$S atmosphere. Our situ and operando structural analysis grazing incidence synchrotron X-ray...
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures such can be conceived to harness and couple a wide range magneto-optical magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature ability grow films over large areas. Here we demonstrate large-area growth single-crystal...
Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, a single layered device through an infinitely diverse set quantum materials. However, most efforts only focused on exfoliated material that inherently limits both dimensions scalability for applications. Here, we show epitaxial growth large area insulators...
The magnetization profile of magnetically ordered patterns in ultrathin films was determined by circular dichroism x-ray resonant magnetic scattering (CDXRMS). When this technique applied to single crystalline iron palladium alloy layers, flux closure domains were found whose thickness can constitute a large fraction ( approximately 25 percent) the total film.
We show how, combining He ion irradiation and thermal mobility below 600 K, the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd) may be triggered controlled. Kinetic Monte Carlo simulations that initial directional short range determines transformation. Magnetic ordering perpendicular film plane was achieved, promoting initially weak magnetic anisotropy highest values known for FePd films. Applications ultrahigh density recording are suggested.
We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The current germanium was generated by pumping from a CoFeB/MgO magnetic tunnel junction order to prevent impedance mismatch issue. A clear electromotive force Ge ferromagnetic resonance of CoFeB. same study then carried out on several test samples, particular we investigated influence MgO barrier and sample annealing ISHE signal. First, reference bilayer grown SiO$_{2}$ exhibits due anisotropic...
We present measurements of the spin Hall effect (SHE) in AuW and AuTa alloys for a large range W or Ta concentrations by combining experiments on lateral valves ferromagnetic-resonance/spin-pumping techniques. The main result is identification enhancement angle (SHA) side-jump mechanism impurities, with SHA as high $+0.5$ (i.e., $50%$) about 10% Ta. In contrast, does not exceed $+0.15$ can be explained intrinsic SHE alloy without significant extrinsic contribution from skew scattering...
Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an intense field of research nowadays. Here, we investigate the variation electrical resistance Ge(111) grown epitaxially on semi-insulating Si(111) under application external magnetic field. We find a magnetoresistance term that linear in current density j and B, hence, odd corresponding unidirectional magnetoresistance. At 15 K, for I=10 μA (or j=0.33 A m−1) B=1 T, it represents 0.5% zero...
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTHow to illustrate ligand-protein binding in a class experiment: An elementary fluorescent assayAlain Marty , Michel Boiret and Deumie Cite this: J. Chem. Educ. 1986, 63, 4, 365Publication Date (Print):April 1, 1986Publication History Received3 August 2009Published online1 April 1986Published inissue 1 1986https://doi.org/10.1021/ed063p365RIGHTS & PERMISSIONSArticle Views966Altmetric-Citations80LEARN ABOUT THESE METRICSArticle Views are the...
In this letter, we report on electrical spin injection and detection in n-type germanium-on-insulator using a Co/Py/Al2O3 injector 3-terminal non-local measurements. We observe an enhanced accumulation signal of the order 1 meV consistent with sequential tunneling process via interface states vicinity Al2O3/Ge interface. This is further observable up to 220 K. Moreover, presence strong inverted Hanle effect points out influence random fields arising from roughness injected spins.
We report an experimental study of a gold-tungsten alloy (7 at. % W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport lateral spin valve devices and spin-pumping with inverse Hall effect experiments. A very large angle about 10% is consistently found techniques the reliable diffusion length 2 nm estimated by sink experiments valves. With its chemical stability, high resistivity, small induced damping, this AuW may find nearest future.
Van der Waals heterojunctions composed of graphene and transition metal dichalcogenides have gain much attention because the possibility to control tailor band structure, promising applications in two-dimensional optoelectronics electronics. In this report, we characterized van heterojunction MoSe2/few-layer with a high-quality interface using cutting-edge surface techniques scaling from atomic microscopic range. These analyses gave us complete picture structure electronic properties...
We present measurements of pure spin current absorption on lateral valves. By varying the width absorber we demonstrate that enable one to characterize efficiently transport properties ferromagnetic elements. The analytical model used describe measurement takes into account polarization absorber. analysis thus allows determination and diffusion length a studied material independently, contrary most experiments based valves where those values are entangled. report parameters some important...
Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through spin–orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and broad distribution SOT magnitudes. In this work, we present scalable approach grow full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining charge-compensated TI (Bi,Sb)2Te3 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport...
The resistance generated by individual domain walls is measured in a FePd nanostructure. Combining transport and magnetic imaging measurements, the intrinsic wall quantified. It found positive of magnitude consistent with that predicted models based on spin scattering effects within walls. This magnetoresistance at nanometer scale allows direct counting number inside effect then used to measure changes configuration submicron stripes under application field.