Hanako Okuno

ORCID: 0000-0002-7688-9526
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About
Contact & Profiles
Research Areas
  • Graphene research and applications
  • 2D Materials and Applications
  • Carbon Nanotubes in Composites
  • Magnetic properties of thin films
  • Semiconductor materials and devices
  • Topological Materials and Phenomena
  • Diamond and Carbon-based Materials Research
  • MXene and MAX Phase Materials
  • Chalcogenide Semiconductor Thin Films
  • GaN-based semiconductor devices and materials
  • Quantum Dots Synthesis And Properties
  • Theoretical and Computational Physics
  • Quantum and electron transport phenomena
  • Nonlinear Dynamics and Pattern Formation
  • Magnetic Properties and Applications
  • Metallic Glasses and Amorphous Alloys
  • Perovskite Materials and Applications
  • Advancements in Battery Materials
  • Chaos control and synchronization
  • Ga2O3 and related materials
  • Advanced Memory and Neural Computing
  • Surface and Thin Film Phenomena
  • Electronic and Structural Properties of Oxides
  • Electrocatalysts for Energy Conversion
  • Electron and X-Ray Spectroscopy Techniques

Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025

Université Grenoble Alpes
2016-2025

CEA Grenoble
2016-2025

Laboratoire Modélisation et Exploration des Matériaux
2019-2025

Laboratoire des Matériaux Avancés
2015-2024

Institut de Recherche Interdisciplinaire de Grenoble
2020-2024

CEA LETI
2017-2024

Centre National de la Recherche Scientifique
2002-2023

Institut Nanosciences et Cryogénie
2009-2022

Direction de la Recherche Fondamentale
2020

Poly(3,4-ethylenedioxythiophene) (PEDOT) is certainly the most known and used conductive polymer because it commercially available shows great potential for organic electronic, photovoltaic, thermoelectric applications. Studies dedicated to PEDOT films have led high conductivity enhancements. However, an exhaustive understanding of mechanisms governing such enhancement still lacking, hindered by semicrystalline nature material itself. In this article, we report development highly controlling...

10.1021/acs.chemmater.6b01035 article EN Chemistry of Materials 2016-04-29

Controlled substitutional doping of two-dimensional transition-metal dichalcogenides (TMDs) is fundamental importance for their applications in electronics and optoelectronics. However, achieving p-type conductivity MoS2 WS2 challenging because natural tendency to form n-type vacancy defects. Here, we report versatile growth monolayer by liquid-phase mixing a host tungsten source niobium dopant. We show that crystallites with different concentrations substitutionally doped Nb up 1014 cm-2...

10.1021/acsnano.9b05574 article EN ACS Nano 2019-09-06

Graphene and graphene oxide receive much attention these years, because they add attractive properties to a wide range of applications products. Several studies have shown toxicological effects other carbon‐based nanomaterials such as carbon black nanoparticles nanotubes in vitro vivo. Here, we report in‐depth physicochemical characterization three commercial materials, one (GO) two reduced oxides (rGO) assess cytotoxicity genotoxicity the murine lung epithelial cell line FE1. The studied GO...

10.1002/em.22017 article EN cc-by-nc-nd Environmental and Molecular Mutagenesis 2016-05-17

Single and few layers of the two-dimensional (2D) semimetal ZrTe2 are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at interface moiré pattern observed indicating good registry between epilayer substrate through weak forces. The electronic band structure imaged angle resolved photoelectron spectroscopy shows that valence conduction bands cross Fermi level exhibiting abrupt linear dispersions. latter indicates...

10.1021/acsnano.7b08350 article EN ACS Nano 2018-01-09

Spin-transfer torque (STT) and spin–orbit (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories logic devices, in particular based on domain wall (DW) motion. In this work, we report the study STT-driven DW motion ferrimagnetic manganese nickel nitride (Mn4–xNixN) films, which angular momentum compensation can be obtained by fine adjustment Ni content. Large...

10.1021/acs.nanolett.1c00125 article EN Nano Letters 2021-03-11

In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures such can be conceived to harness and couple a wide range magneto-optical magneto-electrical properties, technologically relevant applications require Curie temperatures at or above room-temperature ability grow films over large areas. Here we demonstrate large-area growth single-crystal...

10.1038/s41699-022-00285-w article EN cc-by npj 2D Materials and Applications 2022-02-23

Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, a single layered device through an infinitely diverse set quantum materials. However, most efforts only focused on exfoliated material that inherently limits both dimensions scalability for applications. Here, we show epitaxial growth large area insulators...

10.48550/arxiv.2501.03955 preprint EN arXiv (Cornell University) 2025-01-07

Graphene is the first engineering electronic material, which purely two-dimensional: it consists of two exposed sp2-hybridized carbon surfaces and has no bulk. Therefore, surface effects such as contamination by adsorbed polymer residues have a critical influence on its electrical properties can drastically hamper widespread use in devices fabrication. These contaminants, originating from mandatory technological processes graphene synthesis transfer, also impact fundamental studies...

10.1063/1.4931370 article EN Journal of Applied Physics 2015-09-22

The lack of scalable-methods for the growth 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here two-step ALD route new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in layer-by-layer deposition amorphous surface Mo(iv) thiolate at 50 °C, followed by subsequent annealing higher temperature leading ultra-thin...

10.1039/c6nr06021h article EN Nanoscale 2016-09-26

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals rare-earths. Here, we show that Mn4N, rare-earth free ferrimagnet made abundant elements, an exciting candidate development sustainable spintronics devices. Mn4N thin films grown epitaxially SrTiO3 substrates possess remarkable properties, perpendicular magnetization, very high extraordinary Hall angle...

10.1021/acs.nanolett.9b03416 article EN Nano Letters 2019-10-30

A partial transformation of the {100} surfaces ceria nanocubes into a set nanometer-heighted, {111}-bounded, peaks was achieved by an oxidation treatment at 600 °C. This particular type surface nanostructuration allows preparation CeO2 nanoparticles in which {111} nanofacets contribute significantly to their crystallography. structure plays key influence on behavior as support gold catalysts. Thus, appearance well-developed {111}-nanofacets leads much higher efficiency usage this noble metal...

10.1021/acscatal.5b00086 article EN ACS Catalysis 2015-04-30

Understanding how ultrasmall gold nanoparticles (metal core ∼1–1.5 nm), so-called nanoclusters (Au NCs), interact with biological barriers has become highly important for their future bioapplications. The properties of Au NCs tunable hydrophobicity were extensively characterized in three different situations: (i) interaction serum solution, (ii) synthetic free-standing lipid bilayers integrated a microfluidic device, and (iii) cell studies two types (U87MG human primary glioblastoma A375...

10.1021/acs.chemmater.7b02497 article EN Chemistry of Materials 2017-08-03

The properties of group III-Nitrides (III-N) such as a large direct bandgap, high melting point, and breakdown voltage make them very attractive for optoelectronic applications. However, conventional epitaxy on SiC sapphire substrates results in strained defective films with consequently poor device performance. In this work, by studying the nucleation GaN graphene/SiC MOVPE, we unambiguously demonstrate possibility remote van der Waals epitaxy. By choosing appropriate growth conditions,...

10.1088/1361-6528/ab4501 article EN Nanotechnology 2019-09-18

Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through spin–orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and broad distribution SOT magnitudes. In this work, we present scalable approach grow full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining charge-compensated TI (Bi,Sb)2Te3 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport...

10.1021/acs.nanolett.3c03291 article EN Nano Letters 2024-01-10

Abstract The spin–orbit coupling relating the electron spin and momentum allows for generation, detection manipulation. It thus fulfils three basic functions of field-effect transistor. However, Hall effect in bulk germanium is too weak to produce currents, whereas large Rashba at Ge(111) surfaces covered with heavy metals could generate spin-polarized currents. splitting can actually be as hundreds meV. Here we show a giant spin-to-charge conversion metallic states Fe/Ge(111) interface due...

10.1038/ncomms13857 article EN cc-by Nature Communications 2016-12-15

Abstract The group IVB 2D transition metal dichalcogenides are considered to be stable in the high symmetry trigonal octahedral structure due lack of unpaired d ‐electrons on site. It is found that multilayer epitaxial TiTe 2 an exception adopting a commensurate × charge density wave (CDW) at room temperature with ABA type stacking as evidenced by direct lattice imaging and reciprocal space mapping. CDW stabilized highly anisotropic strain imposed substrate out‐off‐plane compression which...

10.1002/admi.201801850 article EN Advanced Materials Interfaces 2019-01-28

It is known that graphene surface contaminations by residues affect drastically its intrinsic properties and cannot be avoided when chemical vapor deposited (CVD) transferred on other substrates. In this work, we investigate X‐ray photoelectron spectroscopy work function measurements using photoemission electron microscopy the capabilities of high‐density plasmas to clean graphene. The evolution different species at monitored as a plasma exposure. H 2 are shown efficiently PMMA from CVD Cu....

10.1002/sia.6010 article EN Surface and Interface Analysis 2016-04-04

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. recently discovered spin heavy metals continues to enrich picture effect-related phenomena. However, collection would not complete without mentioning valley degree freedom benchmarked observation Here we show experimental evidence its missing counterpart, Using millimeter-sized WSe$_{2}$ mono-multi-layers and ferromagnetic resonance-spin pumping...

10.1038/s41467-019-13590-8 article EN cc-by Nature Communications 2019-12-19

The study of moiré engineering started with the advent van der Waals heterostructures, in which stacking 2D layers different lattice constants leads to a pattern controlling their electronic properties. field entered new era when it was found that adjusting twist between two graphene led strongly-correlated-electron physics and topological effects associated atomic relaxation. A is now routinely used adjust properties materials. This investigates type superlattice bilayer one layer biaxially...

10.1002/adma.202306312 article EN cc-by-nc-nd Advanced Materials 2023-08-24

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries well tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, in epitaxially grown PtSe2 by THz spintronic emission is studied since its 1T symmetry SOC favor SCC. High quality as-grown layers...

10.1002/adma.202304243 article EN cc-by Advanced Materials 2023-12-31

This study explores the challenging heteroepitaxial growth of wurtzite AlN on monoclinic β-Ga2O3(-201) using plasma-assisted molecular beam epitaxy. By optimizing various nucleation and conditions, particularly Al/N flux ratio, we achieve optimal surface morphology structural quality. Substrate nitridation under N-rich conditions is found to favor formation smooth with a sharp nitride/oxide heterointerface, whereas Al-rich lead rougher textured along <0001> direction but highly twisted...

10.1021/acsmaterialslett.4c02479 article EN ACS Materials Letters 2025-01-23
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