A5006120746- Semiconductor materials and devices
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- Graphene research and applications
- Advanced Surface Polishing Techniques
- Phase-change materials and chalcogenides
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- 2D Materials and Applications
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Diamond and Carbon-based Materials Research
- Electronic and Structural Properties of Oxides
- Advanced Memory and Neural Computing
- Advanced MEMS and NEMS Technologies
- Electron and X-Ray Spectroscopy Techniques
- Perovskite Materials and Applications
- Photonic Crystals and Applications
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2014-2023
CEA Grenoble
2014-2023
Université Grenoble Alpes
2014-2023
CEA LETI
2014-2023
Institut polytechnique de Grenoble
2012-2022
Direction de la Recherche Technologique
2001-2017
Institut Nanosciences et Cryogénie
2017
Paul Scherrer Institute
2017
European Automobile Manufacturers Association
2014
STMicroelectronics (France)
2004-2010
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect efficient laser sources monolithically integrated a Si photonic platform. For instance, layers with 12.5% Sn were reported to lase at 2.5 μm wavelength up 130 K. In this work, we report longer emitted and significant improvement in lasing temperature. The improvements resulted from use higher content optimized crystalline quality, grown graded buffers using reduced pressure CVD. fabricated...
High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance high induced via shaping layers into micro-bridges. Building crystalline quality, demonstrate bi-axial strain 1.9%, which is highest reported value measured thick (350 nm) layer. Since generally considered as onset direct bandgap Ge, our realization paves way towards mid-infrared lasers fully...
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, control strain becomes an important challenge to improve devices. Strain micro-measurements usually performed by Raman spectroscopy. However, different relationships linking spectral shifts built-in can be found in literature. They were deduced from studies on low content layers (i.e., xSn < 8%) or GeSiSn layers. In this work, we...
The lack of scalable-methods for the growth 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here two-step ALD route new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in layer-by-layer deposition amorphous surface Mo(iv) thiolate at 50 °C, followed by subsequent annealing higher temperature leading ultra-thin...
Thin (45 nm) and ultrathin (4.5–1 Al2O3 layers deposited on HF-stripped Si or thin SiO2 surfaces by atomic layer deposition were studied angle-resolved x-ray photoelectron spectroscopy, before after rapid thermal annealing (RTA) at 800 °C for 15 min in N2 a conventional furnace under ultrahigh vacuum (UHV) (p=10−6 mbar) the same temperature. Samples characterized terms of chemical defects interfacial regrowth upon annealing. Chemical as Al–OH groups are evidenced from O 1s spectra even RTA....
Germanium is a strong candidate as laser source for silicon photonics. It widely accepted that the band structure of germanium can be altered by tensile strain so to reduce energy difference between its direct and indirect gaps. However, conventional gap deformation potential model most adopted describe this transition happens have been investigated only up 1% uniaxially loaded strains. In work, we use microbridge geometry stress along [100] ε100 = 3.3% longitudinal then perform...
The application of high values strain to Ge considerably improves its light emission properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy is routinely used for measurements. Typical Raman-strain relationships that are were defined up ∼1% using phonon deformation potential theory. In this work, we have studied relationship at higher levels by calculating measuring the spectral shift-strain relations in several different configurations. Since differences...
We report on the efficiency and thermal stability of p-doping by iodine single randomly stacked, weakly coupled bilayer polycrystalline graphene, as directly measured photoelectron emission microscopy. The doping results in work function value increase 0.4–0.5 eV, with a higher degree uptake (2%) compared to layer (1%) suggesting intercalation bilayer. chemistry is identified accordingly I3− I5− poly iodide anionic complexes slightly concentration than monolayer likely attributed differences...
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, values are commonly deduced from Raman spectroscopy empirical linear models only established up ε100 = 1.2% for uniaxial stress. In this work, we calibrate Raman-strain relation higher synchrotron based microdiffraction. The microbridges show unprecedented tensile 4.9% corresponding an unexpected Δω 9.9 cm−1 shift. We...
Abstract For a better understanding of the physical and electronic properties emissive carbon films, one best ways is to compare results obtained with several surface structural analysis techniques. In this article, different types film depositions for developing large flat panel displays by field emission are analysed correlated their emissivity. Pulse laser ablation high‐temperature plasma‐enhanced chemical vapour deposition (PECVD) films low‐temperature PECVD characterized XPS, Raman...
The interfacing of polyoxometalates and graphene can be considered to an innovative way generate hybrid structures that take advantage the properties both components. Polyoxometalates are redox-sensitive photosensitive compounds with high temperature stability (up 400 °C for some), showing tunable depending on metal incorporated inside complex. Graphene has a unique electronic band structure combined good material electrical optical applications. spontaneous, rather than electrochemical,...
We report on the characterization, thanks to Raman spectroscopy and imaging of tensely strained Si films pseudomorphically grown (001), (110), (111) SiGe virtual substrates. The samples studied here are those described in work Destefanis et al. [J. Appl. Phys 106, 043508 (2009)]. They consist 17-nm-thick layers at 650 °C with SiH4 as a gaseous precursor top polished substrates various surface orientations. first derived exact component array strain/stress field along different growth...
Abstract Aging experiments, with a special emphasis on the atmosphere effect, have been carried out undoped polyaniline, in its half‐oxidized state, namely emeraldine base (EB). The polymer has aged under vacuum and air atmosphere. chemical degradation analyzed by several complementary techniques such as viscosity measurements, FTIR, XPS, UV‐Vis‐nIR spectroscopy. We show that exhibits two different mechanisms. first one is intrinsic to occurs independently aging conditions (vacuum or air)....
Ge-rich GeSbTe alloys allowed overcoming temperature limitations of phase-change memory technology. In this paper, we present a thorough investigation the structural evolution and crystallization process these as function increasing in annealing. We highlight progressive rearrangement structure toward demixing Ge phases. particular, show stability Sb–Te units development Ge–Te bonds around features. observe formation transient phase, which is driven by phenomena, leading to gradual diffusion...