A5029392909- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Silicon Carbide Semiconductor Technologies
- 3D IC and TSV technologies
- Nanowire Synthesis and Applications
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic Crystals and Applications
- Thin-Film Transistor Technologies
- Advanced Surface Polishing Techniques
- Advanced MEMS and NEMS Technologies
- Ferroelectric and Negative Capacitance Devices
- Electronic Packaging and Soldering Technologies
- Quantum and electron transport phenomena
- Electromagnetic Compatibility and Noise Suppression
- Advanced Fiber Optic Sensors
- Diamond and Carbon-based Materials Research
- Silicon and Solar Cell Technologies
- Additive Manufacturing and 3D Printing Technologies
- Advanced Fiber Laser Technologies
- Semiconductor materials and interfaces
- Metal and Thin Film Mechanics
- Advanced ceramic materials synthesis
CEA LETI
2015-2024
CEA Grenoble
2015-2024
Université Grenoble Alpes
2015-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2015-2024
Institut polytechnique de Grenoble
2009-2020
Paul Scherrer Institute
2019
Soitec (France)
2016
European Automobile Manufacturers Association
2014
The University of Tokyo
2007-2008
Direction de la Recherche Technologique
2005-2007
3D VLSI with a CoolCube™ integration allows vertically stacking several layers of devices unique connecting via density above million/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . This results in increased no extra cost associated to transistor scaling, while benefiting from gains power and performance thanks wire-length reduction. technology leads high top transistors Thermal Budgets (TB) compatible bottom MOSFET integrity. Key...
Abstract Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and favourable band structure, which can be tuned by strain or alloying with Sn to become direct, it was found required interband semiconductor lasers. Here, we report lasing in the mid-infrared region (from λ = 3.20 μm up 3.66 μm) tensile strained Ge microbridges uniaxially loaded above 5.4% 5.9% upon optical pumping, differential quantum efficiency close 100%...
Thanks to bonding, metal-gate etching without any out-of-gate Si consumption, and self-aligned transfer of alignment marks, we have processed the first 10-nm-gate-length DG MOS transistors with metal gates. These devices exhibit excellent short-channel effects control high-performance characteristics. Their saturation current is very sensitive access resistance increase caused by film thinning required respect scaling rules. Moreover, their electrical properties can be tuned between LSTP HP...
High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance high induced via shaping layers into micro-bridges. Building crystalline quality, demonstrate bi-axial strain 1.9%, which is highest reported value measured thick (350 nm) layer. Since generally considered as onset direct bandgap Ge, our realization paves way towards mid-infrared lasers fully...
Germanium is a strong candidate as laser source for silicon photonics. It widely accepted that the band structure of germanium can be altered by tensile strain so to reduce energy difference between its direct and indirect gaps. However, conventional gap deformation potential model most adopted describe this transition happens have been investigated only up 1% uniaxially loaded strains. In work, we use microbridge geometry stress along [100] ε100 = 3.3% longitudinal then perform...
Using a novel process flow, we managed to cointegrate several devices on the same wafer; single gate (SG), ground plane (GP), perfectly aligned double (DG), misaligned DG and oversized back-gate DG. This paper reports experimental evaluation of architectures influence performance silicon-on-insulator MOSFETs. MOSFETs, with lengths down 40 nm, are experimentally compared SG GP Short-channel effect (SCE) control, static mobility quantified for each architecture. When transistors, transistor...
The application of high values strain to Ge considerably improves its light emission properties and can even turn it into a direct band gap semiconductor. Raman spectroscopy is routinely used for measurements. Typical Raman-strain relationships that are were defined up ∼1% using phonon deformation potential theory. In this work, we have studied relationship at higher levels by calculating measuring the spectral shift-strain relations in several different configurations. Since differences...
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, values are commonly deduced from Raman spectroscopy empirical linear models only established up ε100 = 1.2% for uniaxial stress. In this work, we calibrate Raman-strain relation higher synchrotron based microdiffraction. The microbridges show unprecedented tensile 4.9% corresponding an unexpected Δω 9.9 cm−1 shift. We...
We report on the spin transport properties in p-doped germanium (Ge-p) using low temperature magnetoresistance measurements, electrical injection from a ferromagnetic metal and pumping-inverse Hall effect method. Electrical is carried out three-terminal measurements Hanle effect. In 2–20 K range, weak antilocalization provide same lifetime valence band (≈1 ps) agreement with predicted values previous optical measurements. These results, combined dynamical by pumping inverse effect,...
Bulk silicon device technologies are reaching fundamental scaling limitations. The 28 nm and 22 technology nodes have seen the introduction of Ultra-Thin Body Buried Oxide Fully Depleted SOI (UTBB-FDSOI) devices FinFETs, respectively. transistor mandatory to suppress short channel effects. Today, all major research development alliances state that its potential address roadmap requirements down 10nm node. Innovations will be necessary for lower, more advanced node (under 10nm)....
Integrated laser sources compatible with microelectronics represent currently one of the main challenges for silicon photonics. Using Smart Cut<sup>TM</sup> technology, we have fabricated first time 200 mm optical Germanium-On-Insulator (GeOI) substrates which consist a thick layer germanium (typically greater than 500 nm) on top buried oxide (around 1 µm). From this, suspended microbridges efficient Bragg mirror cavities. The high crystalline quality Ge should help to avoid mechanical...
We investigate the spin-to-charge conversion in highly doped germanium as a function of kinetic energy carriers. Spin-polarized electrons are optically generated Ge conduction band, and their is varied by changing photon 0.7--2.2 eV range. The spin detection scheme relies on spin-dependent scattering inside Ge, which yields an inverse spin-Hall electromotive force. detected signal shows sign inversion for $h\ensuremath{\nu}\ensuremath{\approx}1\phantom{\rule{0.16em}{0ex}}\mathrm{eV}$ can be...
Abstract This paper reports the first demonstration of 300 mm In 0.53 Ga 0.47 As-on-insulator (InGaAs-OI) substrates. The use direct wafer bonding and Smart Cut™ technology lead to transfer high quality InGaAs layer on large Si size (300 mm) at low effective cost, taking into account reclaim III–V donor substrate. optimization three key building blocks this is detailed. (1) epitaxial growth wafers has been optimized decrease defect density. (2) For time, hydrogen-induced thermal splitting...
Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for wide range of applications in the frame high power electronics. Despite continuously improving quality and supply 4H-SiC substrates, availability such wafers is still insufficient. An advantageous opportunity offered by Smart Cut TM with integration very SiC layer transferred to low resistivity handle wafer. This bi-layer material enables significant yield optimization improvement device’s electrical...
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there two options. For many applications, based on III-V compounds provide compelling solutions, even if integration is complex therefore costly. However, where low costs also high density crucial, group-IV-based - made Ge GeSn, for example could be an alternative, provided their performance can improved. Such progresses will come with better materials but development...
In 1991, M. Bruel (1) invented and patented the Smart Cut technology to fabricate Silicon On Insulator (SOI) substrates. The process relies on transfer of a high quality single crystal layer from one wafer another: implantation gaseous ions in wafer, direct bonding stiffener splitting (Fig 1). invention this SOI combined with entrepreneurship SOITEC paved way substrates mass production. Today, is mature product (up 300mm diameter) now developments are focused integration new materials...
Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists controlling with an external signal channel where charge carriers flow between a “source” and well separated “drain.” The next generation electronics may operate on spin addition to their germanium appears as best hosting material develop such platform for its compatibility mainstream silicon technology predicted long electron lifetime room...
Currently, one of the main challenges in field silicon photonics is fabrication efficient laser sources compatible with microelectronic technology. An alternative to complexity integration group III-V compounds advancing from high tensile strains applied germanium leading improved emission properties by transforming material an indirect a direct bandgap semiconductor. Theory predicts this transformation occurs at around 4.7% uniaxial strain or 2.0% bi-axial strain. Here, we report on...
Laue micro-diffraction and simultaneous rainbow-filtered were used to measure accurately the full strain tensor lattice orientation distribution at sub-micrometre scale in highly strained, suspended Ge micro-devices. A numerical approach obtain from deviatoric measurement alone is also demonstrated for faster mapping. The measurements performed a series of micro-devices under either uniaxial or biaxial stress an excellent agreement with simulations was found. This shows superior potential...
This paper presents an experimental comparison between single-gate (SG) and double-gate (DG) transistors performance. Using a novel process flow, we managed to cointegrate these two devices on the same wafer with TiN metal gate. Short-channel effect control, static performance, mobility are quantified for each architecture. An in-depth study is performed wide range of temperatures (10 K-300 K) gate lengths (10-20 nm) while channel thickness fixed at 6 nm. experimentally highlights advantages...