A5056496679- Semiconductor materials and devices
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Advanced Fiber Laser Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Laser Material Processing Techniques
- 3D IC and TSV technologies
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Advanced Surface Polishing Techniques
- Mechanical and Optical Resonators
- Ion-surface interactions and analysis
- Diamond and Carbon-based Materials Research
- Plasmonic and Surface Plasmon Research
- Semiconductor Quantum Structures and Devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Fiber Optic Sensors
- Optical Network Technologies
- nanoparticles nucleation surface interactions
- Additive Manufacturing Materials and Processes
- Nanowire Synthesis and Applications
- Additive Manufacturing and 3D Printing Technologies
CEA Grenoble
2016-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2025
Université Grenoble Alpes
2016-2025
CEA LETI
2016-2025
Institut polytechnique de Grenoble
2014-2024
University of Wuppertal
2023
Chungnam National University
2023
Institute for Matching Person and Technology
2023
Columbia University
2023
Apple (United States)
2023
Abstract Enhanced supercontinuum generation (SCG) is experimentally demonstrated in integrated silicon nitride (Si 3 N 4 ) waveguides incorporating highly nonlinear graphene oxide (GO) the form of 2D films. On‐chip integration GO films with precise control their thickness realized by using a transfer‐free and layer‐by‐layer coating method. The film length position achieved via window opening upper silica cladding photonic chips. Detailed SCG measurements are performed fabricated devices...
3D VLSI with a CoolCube™ integration allows vertically stacking several layers of devices unique connecting via density above million/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . This results in increased no extra cost associated to transistor scaling, while benefiting from gains power and performance thanks wire-length reduction. technology leads high top transistors Thermal Budgets (TB) compatible bottom MOSFET integrity. Key...
Efficient nonlinear phenomena in integrated waveguides imply the realization a material of tightly confining sustaining guided modes with small effective area ultra-low propagation losses as well high-power damage thresholds. However, when waveguide cross-sectional dimensions keep shrinking, and probability failure events tend to increase dramatically. In this work, we report both fabrication testing high-confinement, ultralow-loss silicon nitride resonators showing average attenuation...
Silicon photonics is one of the most prominent technology platforms for integrated and can support a wide variety applications. As we move towards mature industrial core technology, present integration silicon nitride (SiN) material to extend capabilities our platform. Depending on application being targeted, have developed several strategies incorporation SiN. We these processes, as well key components dedicated In particular, use SiN athermal multiplexing in optical transceivers datacom...
Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far demonstrating Si3N4-based combs made co-integration silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS)...
Optical parametric amplification (OPA) represents a powerful solution to achieve broadband in wavelength ranges beyond the scope of conventional gain media, for generating high-power optical pulses, microcombs, entangled photon pairs and wide range other applications. Here, we demonstrate amplifiers based on silicon nitride (Si3N4) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. We precise control over thickness, length, position GO films using...
Efficient heat management and control in optical devices, facilitated by advanced thermo-optic materials, is critical for many applications such as photovoltaics, thermal emitters, mode-locked lasers, switches. Here, we investigate the properties of 2D graphene oxide (GO) films precisely integrating them onto microring resonators (MRRs) with over film thicknesses lengths. We characterize refractive index, extinction coefficient, conductivity GO different layer numbers degrees reduction,...
3D Sequential Integration (3DSI) with ultra-small contact pitch (<;100nm) offers new partitioning options at fine granularities. This paper reviews potential applications ranging from computing to sensor interface and gives an update on 3DSI device development. Low-temperature processing techniques have made great progress High Performance (HP) digital stacked FETs for application can be achieved a 500°C Thermal Budget (TB). In addition, ULK/metal lines capable of withstanding this TB used...
For the first time, a full 3D CMOS over CoolCube™ integration is demonstrated with top level compatible state of art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain. Functional inverters either PMOS NMOS on are highlighted. Furthermore, Si layer transfer above 28nm W Metal 1 an industrial short loop return in front end environment presented, confirming compatibility integration.
For the first time maximum thermal budget of in-situ doped source/drain State Of The Art (SOTA) FDSOI bottom MOSFET transistors is quantified to ensure stability in Sequential 3D (CoolCube™) integration. We highlight no degradation Ion/Ioff trade-off up 550°C. Thanks both metal gate work-function especially on short devices and silicide improvement, top temperature could be relaxed 500°C. Laser anneal then considered as a promising candidate for junctions activation. Based in-depth...
Silicon carbide thin films have been deposited by reactive magnetron sputtering in a pure hydrogen plasma at substrate temperatures, Ts, ranging between 100 and 600 °C. The infrared (IR) absorption spectra the transmission electron microscopy observations reveal an onset of crystallization Ts as low 300 crystalline fraction increases with reaches value about 60% for Ts=600 Both refractive index n room temperature dark conductivity σd(RT) show quite consistent behaviors structural evolution...
The 3D sequential integration, of active devices requires to limit the thermal budget top tier processing low temperature (LT) (i.e. TTOP=500 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C) in order ensure stability bottom devices. Here we present breakthrough six areas that were previously considered as potential showstoppers for integration from either a manufacturability, reliability, performance or cost point view. Our...
We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal-oxide-semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> 730-nm-thick films Kerr-based...
Study on the effect of nanosecond laser anneal (NLA) induced crystallization ferroelectric (FE) Si-doped hafnium oxide (HSO) material is reported. The energy density (0.3 J/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to 1.3 ) and pulse count (1.0 30) variations are explored as pathways for HSO based metal-ferroelectric-metal (MFM) capacitors. increase in shows transition toward film monitored by remanent polarization (2P <inf...
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability generate antibunched photons, practical applications require tailoring their emission through cavity effects. In this work, we perform electrodynamics experiments with ensembles embedded microresonators. The emitters under study, known W color centers, are...
As a rapidly expanding family of 2D materials, MXenes have recently gained considerable attention. Herein, by developing coating method that enables transfer-free and layer-by-layer film coating, the nonlinear optical absorption (NOA) Ti3C2T x MXene films is investigated. Using Z-scan technique, NOA characterized at ≈800 nm. The results show there strong layer-dependent behavior, transitioning from reverse saturable (RSA) to (SA) as layer number increases 5 30. Notably, coefficient β changes...
We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning a color center in silicon-on-insulator microcavity. The consists W center, created at well-defined position Si$^{+}$ ion implantation through 150 nm-diameter nanohole mask. A circular Bragg grating cavity resonant with the W's zero-phonon line 1217 nm is same location as nanohole. Under above-gap continuous-wave excitation, very clean photon antibunching behavior ($g{^2}...
Abstract Today, global electrification requires new materials for power applications. 4H-SiC dominates the market due to its excellent energy efficiency and wide operating range. This study explores formation of Ni/4H-SiC backside ohmic contacts using 308 nm nanosecond laser annealing (NLA). After depositing an 80 layer Ni onto wafers through sputtering, different parameters were tested. The densities (ED) ranged from 2.4 5.4 J/cm², number pulses applied varied 1 20, chuck temperatures 25...
10nm Si-implanted HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is demonstrated to be ferroelectric for the first time when integrated in a Back- End-Of - Line (BEOL) 130nm CMOS. Scaled .28μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . capacitors demonstrate excellent endurance (10 xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles measured at 4 V, extrapolated 10...
A thorough study of the phosphorus (P) heavy doping thin Silicon-On-Insulator (SOI) layers by UV nanosecond Laser Thermal Annealing (LTA) is presented in this work. As a function implant dose and laser annealing conditions, melting regimes regrowth processes, as well redistribution activation P top-Si amorphized layer, were investigated. The findings emphasize critical role crystalline silicon layer that remains after amorphizes, it provides nucleation seeds for liquid phase...
Designing new approaches to incorporate dopant impurities in semiconductor materials is essential keeping pace with electronics miniaturization without device performance degradation. On the basis of a mild solution-phase synthetic approach functionalize silica nanoparticles, we were able graft tailor-made boron-molecular precursors and control thermal release boron framework. The molecular-level description surface structure lays foundation for structure–property relationship approach,...