A5035187956- Mechanical and Optical Resonators
- Photonic and Optical Devices
- Quantum Information and Cryptography
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Advanced Fluorescence Microscopy Techniques
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Neural Networks and Reservoir Computing
- Optical Network Technologies
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2023-2024
CEA Grenoble
2023-2024
Laboratoire Traitement et Communication de l’Information
2023
Institut polytechnique de Grenoble
2023
Université Grenoble Alpes
2023
Télécom Paris
2023
We report successful incorporation of an ensemble G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters resonant modes is studied continuous-wave time-resolved microphotoluminescence (PL) experiments. observe on PL spectra, wide spectral range that covered by emission. By finely tuning size microrings, we match their zero-phonon line at 1278 nm with a mode quality factor around 3000 volume 7.2 (lambda...
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability generate antibunched photons, practical applications require tailoring their emission through cavity effects. In this work, we perform electrodynamics experiments with ensembles embedded microresonators. The emitters under study, known W color centers, are...
We present an all-silicon source of near-infrared linearly-polarized single photons, fabricated by nanoscale positioning a color center in silicon-on-insulator microcavity. The consists W center, created at well-defined position Si$^{+}$ ion implantation through 150 nm-diameter nanohole mask. A circular Bragg grating cavity resonant with the W's zero-phonon line 1217 nm is same location as nanohole. Under above-gap continuous-wave excitation, very clean photon antibunching behavior ($g{^2}...
We propose methods for the exact synthesis of single-qubit unitaries with high success probability and gate fidelity, considering both time-bin frequency-bin encodings. The proposed schemes are experimentally implementable a spectral linear-optical quantum computation (S-LOQC) platform, composed electro-optic phase modulators phase-only programmable filters (pulse shapers). assess performances in terms fidelity two simplest three-component configurations arbitrary generation encodings give...
Herein, high‐resistivity silicon substrates with specific He + ion implantations to mitigate the parasitic surface conduction effect are studied. Several postimplantation thermal annealing conditions investigated. Substrate performance is assessed at radiofrequencies (RFs) using small‐signal characterization of coplanar waveguides (CPW) structures. The best effective resistivity ( ρ eff ) 4 kΩ cm achieved wafer annealed 600 °C for 2 h. This value also stable as a function DC bias applied...
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability generate antibunched photons, practical applications require tailoring their emission through cavity effects. In this work, we perform electrodynamics experiments with ensembles embedded microresonators. The emitters under study, known W color centers, are...