A5006283495- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Ion-surface interactions and analysis
- Silicon Nanostructures and Photoluminescence
- Advanced Electron Microscopy Techniques and Applications
- 3D IC and TSV technologies
- Advanced Surface Polishing Techniques
- Electron and X-Ray Spectroscopy Techniques
- Diamond and Carbon-based Materials Research
- Additive Manufacturing and 3D Printing Technologies
- Force Microscopy Techniques and Applications
- Photonic and Optical Devices
- Surface and Thin Film Phenomena
- Semiconductor Quantum Structures and Devices
- Silicon Carbide Semiconductor Technologies
- Magnetic properties of thin films
- Metal and Thin Film Mechanics
- Advanced X-ray Imaging Techniques
- Magnetic Properties and Applications
- Mechanical and Optical Resonators
CEA LETI
2014-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2014-2024
Université Grenoble Alpes
2014-2024
Albany Molecular Research (United States)
2024
CEA Grenoble
2012-2023
Institut polytechnique de Grenoble
2012-2023
Institut Nanosciences et Cryogénie
2018
Centre d’Élaboration de Matériaux et d’Études Structurales
2010-2014
Université de Toulouse
2010-2014
Centre National de la Recherche Scientifique
2009-2014
We report on vertically stacked horizontal Si NanoWires (NW) /»-MOSFETs fabricated with a replacement metal gate (RMG) process. For the first time, stacked-NWs transistors are integrated inner spacers and SiGe source-drain (S/D) stressors. Recessed epitaxially re-grown SiGe(B) S/D junctions shown to be efficient inject strain into Si/-channels. The Precession Electron Diffraction (PED) technique, nm-scale precision, is used quantify deformation provide useful information about fields at...
We report the fabrication of G centers in silicon with an areal density compatible single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which locally implanted carbon ions and protons various fluences. Decreasing implantation fluences enables to gradually switch large ensembles isolated defects, reaching densities down $\sim$0.2 $\mu$m$^{-2}$. Single defect creation demonstrated by antibunching intensity-correlation...
The 3D sequential integration, of active devices requires to limit the thermal budget top tier processing low temperature (LT) (i.e. TTOP=500 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C) in order ensure stability bottom devices. Here we present breakthrough six areas that were previously considered as potential showstoppers for integration from either a manufacturability, reliability, performance or cost point view. Our...
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability generate antibunched photons, practical applications require tailoring their emission through cavity effects. In this work, we perform electrodynamics experiments with ensembles embedded microresonators. The emitters under study, known W color centers, are...
Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate covering InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics objects. Results from core region sliced QD, an entire object, are consistent complementary allowing development accurate models describing 3D shape, chemical distribution, elastic strains stresses wetting layer, matrix. The measured structure develops...
Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-On-Insulator were investigated. From strain maps with a nanometer spatial resolution obtained by transmission electron microscopy, we developed 3D quantitative numerical models describing the mechanics of structures. While elastic interactions describe every other...
X-ray diffraction measurements as well electron (scanning and transmission), optical, atomic force microscopies are used to study the thermally induced stress relief mechanisms in coimplanted H+ He+ ions into (001) Si substrates at moderate energies, resulting damage layers located ≈1.5 μm underneath surface. By changing implantation fluence rate from 0.25 1.5 μA cm−2, two distinct phenomena take place: localized blistering/exfoliations or complete surface delamination, freestanding thick...
We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show direct correlation between lattice strain implanted ion depth profiles. The measured is examined framework solid mechanics its physical origin discussed. evolution subjected to intermediate temperature annealing (350 °C) elucidated through transmission electron microscopy. Gas-filled cavities form nanocracks spherical bubbles...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation S. Reboh, J. F. Barbot, M. Beaufort, P. Fichtner; H-induced subcritical crack propagation interaction phenomena in (001) Si using He-cracks templates. Appl. Phys. Lett. 18 January 2010; 96 (3): 031907. https://doi.org/10.1063/1.3290249 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends...
The development of microcracks in hydrogen-implanted silicon has been studied up to the final split using optical microscopy and mass spectroscopy. It is shown that amount gas released when splitting material proportional surface area microcracks. This observation interpreted as a signature vertical collection available gas. modeled taking into account both diffusion mechanical crack propagation. model reproduces many experimental observations such dependence time upon temperature implanted dose.
The microstructure of ion-implanted crystals is profoundly dictated by mechanical strain developing in interplay with structural defects. Understanding the origin during early stages development challenging and requires accurate measurements modeling. Here, we investigate H-implanted Si. X-ray diffraction analysis performed to measure mesoscopic out-of-plane dark-field electron holography map two-dimensions (2D) nanometer spatial resolution. Supported finite element method modeling, propose...
Abstract Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to design of 3D nanostructures rose new fabrication processes, but a technique capable full characterization, particularly their dopant distribution, representative (high statistics) way is still lacking. Here we propose methodology based on Medium Energy Ion Scattering (MEIS) address this query, allowing structural and compositional...
We combine advanced transmission electron microscopy (TEM) and numerical models to draw the evolution of strains over integration horizontally stacked Gate-All-Around Nanosheet transistors (GAANS). In particular, we measured compressive -0.5% -1% after channel release in at 10 nm design rule. With support on model calculations, speculate that effect is related a inter-layer dielectric (ILD). As another method manipulate stresses, specifically designed GAANS demonstrate transition from...
Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation measured as a function of dose. The dependence strain with dose shows different regimes starting from linear to quadratic and saturation. observed is consistent ab-initio elasticity calculations. rate changes can be associated the predominant location hydrogen in bond center location.
3D sequential stacking is demonstrated using top tier FDSOI devices on bottom bulk finFETs. integration and top-bottom layer interconnectivity validated through functional via chains, CMOS single inverters inverter chain with transistors built in the layers. Three different Si transfer flows, including a low temperature Smart Cut™, are investigated compared electrically for planar devices. Transfer of bi-axial tensile strained silicon 60-80% performance boost nMOS device over unstrained...
Hydrogen is implanted into (001) silicon under the strain field of previously formed overpressurized helium plates. Upon thermal annealing, hydrogen atoms precipitate platelet structures oriented within specific {111} or {001} variant determined through local symmetry strain. The behavior understood in terms elastic interactions and described via energy minimization calculations, predicting formation distribution each orientation variant. Our results demonstrate concept that sublocal...
The ion beam synthesis of Pb nanoparticles (NPs) in silica is studied terms a two step thermal annealing process consisting low temperature long time aging treatment followed by high short one. samples are investigated Rutherford backscattering spectrometry and transmission electron microscopy. results obtained show that highly stable trapping structures formed during the treatment. These only dissociate at temperatures, inhibiting nucleation NPs metallic phase causing an atomic...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation S. Reboh, F. Rieutord, L. Vignoud, Mazen, N. Cherkashin, M. Zussy, D. Landru, C. Deguet; Effect of H-implantation in the local elastic properties silicon crystals. Appl. Phys. Lett. 28 October 2013; 103 (18): 181911. https://doi.org/10.1063/1.4828659 Download citation file: Ris (Zotero) Reference Manager...