A5069111308- Semiconductor materials and devices
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor Quantum Structures and Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Advanced Electron Microscopy Techniques and Applications
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Silicon and Solar Cell Technologies
- Surface and Thin Film Phenomena
- Advanced Materials Characterization Techniques
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and interfaces
- Thermal properties of materials
- Near-Field Optical Microscopy
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Gas Sensing Nanomaterials and Sensors
- Ion-surface interactions and analysis
- Semiconductor Lasers and Optical Devices
- Anodic Oxide Films and Nanostructures
- Magneto-Optical Properties and Applications
- Digital Holography and Microscopy
- Dielectric properties of ceramics
- Ferroelectric and Piezoelectric Materials
CEA LETI
2012-2025
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2012-2025
Université Grenoble Alpes
2011-2025
Institut polytechnique de Grenoble
2011-2024
CEA Grenoble
2011-2024
Institut Nanosciences et Cryogénie
2018
IBM (United States)
2011
Istituto di Metodologie Chimiche
1994-1997
Istituto Nazionale per la Fisica della Materia
1995
Sapienza University of Rome
1992
Abstract Reliable characterization techniques that guarantee real‐time quality control with a non‐destructive and multiscale approach are currently an essential necessity for electronic industries. Tip‐Enhanced Raman Spectroscopy (TERS) offers excellent solution to this demand. In addition providing chemical composition through the spectrometer, TERS leverages high lateral resolution of coupled Atomic Force Microscope, enabling morphological samples down nanometer scale. This study advances...
The preparation of ZnO thin films with controlled electrical resistivity and optical properties is often challenged by the presence defects, such as oxygen vacancies or interstitial zinc. Here, we investigate material polycrystalline prepared thermal Atomic Layer Deposition (ALD) molecular pulsing during growth. By means structural, characterizations, identify key growth parameters this unusual ALD process. Unexpectedly, influence molecules on crystallography, microstructure morphology...
Pre-strained fin-patterned Si/SiGe multilayer structures for sub-7 nm stacked gate-all-around Si-technology transistors that have been grown onto bulk-Si, virtually relaxed SiGe, strained Silicon-On-Insulator, and compressive SiGe-On-Insulator were investigated. From strain maps with a nanometer spatial resolution obtained by transmission electron microscopy, we developed 3D quantitative numerical models describing the mechanics of structures. While elastic interactions describe every other...
Porous materials display enhanced scattering mechanisms that greatly influence their transport properties. Metal-assisted chemical etching (MACE) enables fabrication of porous silicon nanowires starting from a doped Si wafer by using metal template catalyzes the process. Here, we report on low thermal conductivity (κ) individual (NWs) prepared MACE, with values as 0.87 W·m-1·K-1 for 90 nm diameter wires 35-40% porosity. Despite strong suppression long mean free path phonons in materials,...
The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and constant demand higher performance energy efficiency. However, reduction of metal-oxide-semiconductor field-effect transistor sizes advanced technology nodes below 10 nm presents several challenges. In response, strained silicon has emerged as key player, exploiting strain induction in crystal lattice to improve device performance. At same time, there been growing need...
Er clustering plays a major role in hindering sufficient optical gain Er-doped Si materials. For porous Si, the long-standing failure to govern has been attributed insufficient knowledge of several, concomitant and complex processes occurring during electrochemical Er-doping. We propose here an alternative road solve issue: instead looking for equilibrium between content light emission using 1-2% Er, we significantly increase doping level reach filling silicon pores with luminescent Er-rich...
Abstract Doping of silicon with chalcogens (S, Se, Te) by femtosecond laser irradiation to concentrations well above the solubility limit leads near-unity optical absorptance in visible and infrared (IR) range is a promising route toward silicon-based IR optoelectronics. However, open questions remain about nature particular impact dopant distribution possible role diffusion. Here we use electron tomography using high-angle annular dark-field (HAADF) detector scanning transmission microscope...
Surface-shift low-energy photoelectron diffraction has recently been revealed as a powerful tool for the determination of surface structures. We have applied this method to study clean and hydrogenated (1/4 monolayer) GaAs(110) surfaces. A developed renormalized multiple-scattering theory [M. Biagini, Phys. Rev. B 48, 2974 (1993)] interpretation As 3d polar spectra. Numerical computations carried out several geometries, corresponding different buckling angles bond lengths. obtained angle...
Dual-particulate composites of cobalt ferrite dispersed in a fully dense PZT matrix are produced by quite-fast sintering mechanically activated powders. By high-energy milling the powders bi-modal grain size distribution, with octahedral nano-grains and larger grains grown multiple parallel twinning, achieved final microstructure. The material display "wasp-waisted" magnetic response as consequence two main CoFe2O4 populations can be exploited for broadband energy harvesting or field...
Off-axis electron holography is a powerful technique that can be used to measure the active dopants in semiconductors. The preparation of thin transmission microscopy specimens containing nm-scale regions interest extremely challenging and as consequence ion milling an essential tool. exposure doped energetic ions creates defects deep trap dopants, being principle cause what known inactive region. thickness leads underestimation dopant potential specimens. Here we show this artifact...
Elemental concentration depth profiles of high-k material stacks for 32 nm node devices and below were acquired by high resolution backscattering spectrometry (HRBS), parallel angle resolved-x-ray photoelectron spectroscopy (pAR-XPS), time flight–secondary ion mass (ToF-SIMS). ToF-SIMS data analyzed using an original calibration method which the authors shall refer to as full spectrum protocol. Three different samples studied in this work, one ultrathin insulating layer (IL) alone two...
The authors report about a detailed study of the chemical composition advanced HfO2/interfacial layer/SiGe stacks for future p-channel metal-oxide-semiconductor field-effect transistors. Several state-of-the-art characterization techniques are implemented to provide consistent and complementary information interfacial states Ge diffusion along stack. Angle-resolved x-ray photoelectron spectroscopy is performed in both standard parallel modes. Results highlight presence elemental HfO2,...
A systematic study of GaAs/${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As single quantum wells is performed in two sets samples with different alloy concentrations (namely, x=9% and 18.5%) well thicknesses ranging from 15 to 250 \AA{}. These are grown by the molecular-beam-epitaxy facility characterized ``normalized reflection spectroscopy.'' Accurate calculations exciton energies computed effective-mass approximation a variational wave function expanded...
A sealed tube method has been adopted to prepare Zn-diffused InP layers. Both Zn3P2 and Zn+InP have used as sources. The samples were prepared at 500 °C. diffusion time ranged from 5 up 120 min. S- Zn-doped crystals substrates. Zn depth profile measured by secondary ion mass spectroscopy, while the lattice strain produced carefully investigated x-ray double crystal diffraction standing-waves of recording photoelectrons. results show that in S-doped diffused/virgin interface is very sharp...
We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 through an annealing process. The insertion loss the material (transmission spectrum) is analysed 1520 1600 nm. experimental data are elaborated by implementing Tauc Method analysis, estimation calculated. A maximum blue shift 38 nm, with overall reduction Si content, suggests that diffusion in seed layer during anneal improves homogeneity growth layer. proposed technique provides a path for tailoring...
End of 2013 EURAMET, the European metrology organization opened a call to advance measurement science and technology in field Energy by providing funding for Joint Research Projects (JRP) be funded jointly Commission participating countries frame Metrology Programme (EMRP). This paper describes planned project; no technical results will available at time conference. We feel, however, that CPEM is suitable platform discuss our plans.
The increase of interconnects requirements are pushing the limits electronics and integrated optics. Whilst great improvements have been achieved in integrating photonics electronics, there is a constant demand for improved power consumption bandwidth density. In order to decrease further dimension devices such as modulators, CMOS compatible materials SiGe can be used. Both silicon germanium indirect bandgap materials, but Silicon Germanium tuned obtain Franz Keldysh effect around 1550nm it...