A5002715722- Photonic and Optical Devices
- Photonic Crystals and Applications
- Semiconductor Lasers and Optical Devices
- Optical Coatings and Gratings
- Semiconductor Quantum Structures and Devices
- Plasmonic and Surface Plasmon Research
- Advanced Fiber Laser Technologies
- Semiconductor materials and devices
- Mechanical and Optical Resonators
- Neural Networks and Reservoir Computing
- Semiconductor materials and interfaces
- Orbital Angular Momentum in Optics
- Optical Network Technologies
- Advanced MEMS and NEMS Technologies
- Silicon Nanostructures and Photoluminescence
- Phase-change materials and chalcogenides
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Fiber Optic Sensors
- Thin-Film Transistor Technologies
- Fern and Epiphyte Biology
- Advanced Photonic Communication Systems
- Advanced Semiconductor Detectors and Materials
- Near-Field Optical Microscopy
- Metamaterials and Metasurfaces Applications
École Centrale de Lyon
2014-2024
Université Claude Bernard Lyon 1
2015-2024
Centre National de la Recherche Scientifique
2014-2024
Institut des Nanotechnologies de Lyon
2015-2024
École d'Ingénieurs en Chimie et Sciences du Numérique
2022-2024
Institut National des Sciences Appliquées de Lyon
2011-2024
Institut de Recherche Dupuy de Lôme
2023-2024
Lyon College
2008-2014
Institut für Nachhaltige Landbewirtschaftung (Germany)
2013
École Centrale de Lille
2011
We propose a design that increases significantly the absorption of thin layer absorbing material such as amorphous silicon. This is achieved by patterning one-dimensional photonic crystal (1DPC) in this layer. Indeed, coupling incident light into slow Bloch modes 1DPC, we can control photon lifetime and then, enhance integrated over whole solar spectrum. Optimal parameters 1DPC maximize wavelength range interest, up to 45% both S P polarization states instead 33% for unpatterned, 100 nm...
Photonic integrated circuits offer the potential of realizing low-cost, compact optical functions. Silicon-on-insulator (SOI) is a promising material platform for this photonic integration, as one can rely on massive electronics processing infrastructure to process components. However, integration Si laser hampered by its indirect bandgap. Here, we present direct bandgap III-V epitaxial layer top SOI waveguide means die-to-wafer bonding in order realize near-infrared emission and coupled SOI.
Silicon photonics is one of the most prominent technology platforms for integrated and can support a wide variety applications. As we move towards mature industrial core technology, present integration silicon nitride (SiN) material to extend capabilities our platform. Depending on application being targeted, have developed several strategies incorporation SiN. We these processes, as well key components dedicated In particular, use SiN athermal multiplexing in optical transceivers datacom...
Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far demonstrating Si3N4-based combs made co-integration silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS)...
We investigate the physics of photonic band structures moir\'e patterns that emerged when overlapping two uni-dimensional (1D) crystal slabs with mismatched periods. The structure our system is a result interplay between intra-layer and inter-layer coupling mechanisms, which can be fine-tuned via distance separating layers. derive an effective Hamiltonian captures essential reproduces all numerical simulations electromagnetic solutions high accuracy. Most interestingly, \textit{magic...
In this Letter, we theoretically propose and experimentally demonstrate the formation of a super bound state in continuum (BIC) on photonic crystal flat band.This unique simultaneously exhibits an enhanced quality factor near-zero group velocity across extended region Brillouin zone.It is achieved at topological transition when symmetry-protected BIC pinned k ¼ 0 merges with two Friedrich-Wintgen quasi-BICs, which arise from destructive interference between lossy modes opposite symmetries.As...
We demonstrate that symmetry breaking opens a new degree of freedom to tailor energy-momentum dispersion in photonic crystals. Using general theoretical framework two illustrative practical structures, we show enables an on-demand tuning the local density states same band from zero (Dirac cone dispersion) infinity (flatband dispersion), as well any constant over adjustable spectral range. As proof concept, experimentally transformation very conventional quadratic shape Dirac dispersion,...
Single-line photonic-crystal waveguides are investigated. Photoluminescence experiments and three-dimensional calculation performed allow a clear identification of the guided modes. The propagation properties latter (group velocity, losses) extracted from photoluminescence spectra obtained on closed which act as linear cavities.
Defectless two-dimensional photonic crystal structures have been fabricated by drilling holes in a thin multi-quantum-well InP-based heterostructure transferred onto silicon host wafer. Extremely low group velocity modes, which correspond to the predicted valence band edge, observed for different filling factors. Under pulsed optical pumping, room temperature laser operation around 1.5 μm has achieved on these with threshold milliwatt range.
Two-dimensional (2-D) compact photonic crystal reflectors on suspended InP membranes were studied under normal incidence. We report the first experimental demonstration of 2-D broadband (experimental stopband superior to 200 nm, theoretical 350 nm). They are based coupling free space waves with two slow Bloch modes crystal. Moreover, they present a very strong sensitivity polarization dependence, when modifying their geometry. A (50×50 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
We propose a photovoltaic solar cell design based on 100 nm thick absorbing layer made of hydrogenated amorphous silicon and patterned as two-dimensional planar photonic crystal (PPC). After scanning the parameters PPC within cell, optical simulations performed best configuration obtained reveal that relative increase in integrated absorption inside active 28% can be expected between 300 720 compared to an equivalent but nonpatterned under normal incidence. Besides, this is found robust...
We report on the design and fabrication of heterogeneous compact surface-emitting microlasers, optically pumped operating at 1.5μm room-temperature. A very low threshold, below 15μW, is achieved. The devices consists a top two-dimensional InP photonic crystal slab, including four InAsP quantum wells, SiO2 bonding layer, bottom high index contrast Si∕SiO2 Bragg mirror deposited Si wafer. graphitelike lattice tailored for vertical emission. theoretically experimentally demonstrate that...
One- and two-dimensional photonic crystal slabs have numerous applications in integrated optics. Unfortunately, due to their finite height, in-plane guided modes can suffer outcoupling losses. Although considered as detrimental the context of development circuits, it turns that coupling waveguided radiative be usefully exploited for manipulation photons free space. It is shown this paper interaction through a crystal, especially under conditions where latter correspond extrema dispersion...
Very high photoluminescence extraction is observed from defectless two-dimensional photonic crystals etched in the upper 200-nm-thick silicon layer of a silicon-on-insulator (SOI) substrate. Predicted very low group velocity modes near Γ point band structure lying above light line are used to extract crystal slab into free space. It found that extracted on 80-nm-wide along directions perpendicular slab, with an enhancement up 70 compared unpatterned SOI.
We report experimental demonstration of very fast nonlinear response around 1.5μm in an InP-based two-dimensional photonic crystal. The nonlinearity produced by low pump powers via carrier induced refractive index, leads to efficient wavelength shift a crystal resonance observed reflectivity. Thus we show that it is possible obtain round the clock (rise and recovery) switching times shorter than 10ps with contrast ratio higher 80%.
A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure quaternary InGaAsP p-i-n junction including three InAsP quantum wells, thin membrane silicon by molecular bonding. p++/n++ tunnel used as the p-type contact. technological procedure described and first experimental results show laser emission in pulsed regime at room temperature, with threshold current near 1.5 mA.
A novel architecture of one-dimensional photonic crystal membrane (PCM) reflectors embodying a heterostructure is proposed as robust design aimed at 3-D efficient confinement light in single-mode polarization-controlled 1.55-μm vertical-cavity surface-emitting laser (VCSEL) microsources for heterogeneous integration on complementary metal-oxide-semiconductor (CMOS). On the basis theoretical approach, paper focuses deep interweaving between kinetics transport mirrors and physical nature...
We report on the fabrication and testing of silicon-nitride-on-insulator nonlinear photonic circuits for complementary metal-oxide-semiconductor (CMOS) compatible monolithic co-integration with silicon-based optoelectronics. In particular, a process has been developed to fabricate low-loss crack-free Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> 730-nm-thick films Kerr-based...
Abstract A very large dynamic optical reflection modulation from a simple unpatterned layered stack of phase‐change material ultra‐thin films is experimentally demonstrated. Specifically, this work demonstrates that properly designed systems comprising deeply subwavelength GeSbTe (GST) films, dielectric spacer, and metallic mirror produce light in the near‐infrared strong (up to ) perfect absorption () by simply controlling crystalline state material. While amplitude reaches an contrast...
Room temperature pulsed laser operation of 2D photonic crystal microcavities around 1.55 µm is reported. Such devices are based on thin III/V heterostructures transferred onto silicon and include an InGaAs/InP multiquantum well (MQW) active layer.
A new approach is proposed to realize an optical link for intrachip interconnects. This includes III-V compound-based laser sources and photodetectors, silicon-on-insulator-based strip waveguides. The heterogeneous integration of InP-based microdisk with a silicon waveguide using SiO/sub 2/-SiO/sub 2/ molecular bonding nanofabrication procedures emphasized. technological procedure described first experimental results show that, adequate configuration, 35% light could be coupled from the...
Graphite-lattice photonic crystal structures in InP-based heterostructures transferred onto silicon, including a multi-quantum well active layer, have been designed and fabricated. 1.5 µm vertical emission laser operation was observed at room temperature, with very low threshold (below 50 µW).
Vertical Fabry Perot cavities (VFPC) have been extensively studied, especially for the realization of vertical-cavity surface emitting lasers (VCSELs). They are traditionally composed two Distributed Bragg Reflectors (DBR) which reflectivity has to be sufficient in order obtain highly resonant cavity, is particularly necessary laser emission VCSELs. As a consequence, DBRs consist generally very thick layer stacks. In this paper, we demonstrate smallest conceivable high Q vertical Fabry-Perot...