Efficient nonlinear phenomena in integrated waveguides imply the realization a material of tightly confining sustaining guided modes with small effective area ultra-low propagation losses as well high-power damage thresholds. However, when waveguide cross-sectional dimensions keep shrinking, and probability failure events tend to increase dramatically. In this work, we report both fabrication testing high-confinement, ultralow-loss silicon nitride resonators showing average attenuation...

Photonic qubits should be controllable on-chip and noise-tolerant when transmitted over optical networks for practical applications. Furthermore, qubit sources programmable have high brightness to useful quantum algorithms grant resilience losses. However, widespread encoding schemes only combine at most two of these properties. Here, we overcome this hurdle by demonstrating a silicon nano-photonic chip generating frequency-bin entangled photons, an scheme compatible with long-range...

In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, ellipsometry). By windows with different cutoff wavelengths patched on film, role vacuum ultraviolet (VUV) light resist modifications is clearly outlined distinguished from radicals ions plasma. The analyses...

Quantum optical microcombs in integrated ring resonators generate entangled photon pairs over many spectral modes, and allow the preparation of high-dimensional qudit states. Ideally, those sources should be programmable have a high generation rate, with comb lines tightly spaced for implementation efficient gates based on electro-optic frequency mixing. While these requirements cannot all satisfied by single resonator device, which there is trade-off between rate tight bin spacing,...

With the constant decrease of semiconductor device dimensions, line width roughness (LWR) becomes one most important sources variability and thus needs to be controlled below 2 nm for future technological nodes roadmap. The LWR control at nanometer scale requires accurate measurements, which are inevitably impacted by noise level equipment that causes bias from true values. In this article, we compare capability two metrology tools, critical dimension scanning electron microscopy (CD-SEM)...

With the constant decrease of semiconductor device dimensions, line edge roughness (LER) becomes one most important sources variability and needs to be controlled below 2 nm for future technological nodes roadmap. LER control at nanometer scale requires accurate measurements. We introduce a technique measurement based upon atomic force microscope (AFM). In this technique, sample is tilted about 45° feature sidewalls are scanned along their length with AFM tip obtain three-dimensional images....

We report the successful fabrication of low-loss submicrometric silicon-on-insulator strip waveguides for on-chip links. Postlithography treatment and postetching hydrogen annealing have been used to smoothen waveguide sidewalls, as roughness is major source transmission losses. An extremely low silicon line-edge 0.75 nm obtained with optimized process flow. As a result, record-low optical losses less than 0.5 dB/cm are measured at 1310 dimensions exceeding 500 nm. They range from 1.2 0.8...

B Cl 3 based plasmas exhibit promising plasma chemistries to etch high-k materials and, in particular, HfO2, with a high selectivity over SiO2 and Si substrates. The authors report on the mechanisms involved etching of SiO2, poly-Si substrates BCl3 plasmas. X-ray photoelectron spectroscopy analyses help understanding mechanism driving between HfO2 silicon-containing ion energy plays an important role since it controls transition BCl-like deposition substrate its by ionic bombardment....

With the continuous scaling down of critical dimensions (CDs) semiconductor devices, linewidth roughness (LWR) becomes a non-negligible parameter that needs to be controlled within 1nm (at 3σ) for 32nm node and beyond. In this article, authors have used CD-atomic force microscopy investigate evolution LWR during subsequent lithography plasma etching steps involved in patterning polysilicon transistor gates. The demonstrate present on mask [photoresist/bottom antireflective coating (BARC),...

193 nm photoresist patterns printed by optical lithography are known to present significant linewidth roughness (LWR) after the lithographic step that is partially transferred into underlayers during plasma etching processes. In this study, we identify factors impact pattern sidewalls exposure. Among them, vacuum ultraviolet light (110–210 nm) shown be main contributor LWR decrease induced paper, also demonstrate strong correlation between obtained exposure and surface roughening mechanisms...

The present work focuses on the line width roughness (LWR) transfer and critical dimension control during a typical gate stack patterning shows benefits of introducing 193 nm photoresist treatments before pattern into to improve process performance. two investigated (HBr plasma vacuum ultra violet (VUV) radiation) have been tested both blanket films resist patterns highlight etching roughening mechanisms cured resists. Both reinforce etch resistance exposed fluorocarbon used open Si-ARC...

Critical dimension (CD) control during silicon gate etching has been investigated with state-of-the-art chemistries. In particular, we have compared the etched profile of both isolated and dense gates obtained after main etch step a process using HBr/Cl2/O2 HBr/Cl2/O2/CF4 gas mixtures, study influence CF4/O2 ratio in this mixture. We demonstrate that is mainly driven by passivation layer deposited on mask sidewalls etching. Due to aspect dependant effect formation thinner than structures...

Abstract We have studied the impact of HBr plasma treatment and role VUV light emitted by this on chemical modifications resulting roughness both blanket patterned photoresists. The experimental results show that treatments lead to similar resist bulk result in a decrease glass transition temperature ( T g ). This drop allows polymer chain rearrangement favors surface smoothening. smoothening effect is mainly attributed main scission induced light. For increased exposure time, crosslinking...

We report ultra-low propagation losses in silicon sub-micrometric waveguides on a 200 mm CMOS compatible photonics platform. show median C-band (O-band) as low 0.1 dB/cm and 0.7 (0.14 1.1 dB/cm) monomode rib strip waveguides, respectively, thanks to H2 smoothing annealing. In addition the significant loss reduction, we that performance characteristic of main passive active components platform are preserved or even improved by process.

During plasma etching processes, organic or mineral layers are deposited on the chamber walls. In general, these cause large and uncontrolled shifts in etch process, which is becoming a major issue some of processes used integrated circuit fabrication. The chemical nature their deposition mechanisms remain poorly understood due to lack situ surface diagnostics available monitor reactor this article, we present simple technique using x-ray photoelectron spectroscopy (XPS) analyses composition...

Plasma etching of thin Mo layer integrated in a poly-Si/TiN/Mo/HfO2 gate stack is investigated using various halogen based plasma chemistries. Preliminary studies film show that SF6/Ar, HBr/O2, and Cl2/O2 plasmas lead to spontaneous chemical the molybdenum through formation volatile MoFX, MoOXClY, or MoOXBrY by-products, while Cl2 SF6/CH2F2 requires assistance ion bombardment. High Mo:HfO2 selectivity can be tuned HBr/O2 as function O2 concentration gas mixture bias power, SF6/CH2F2/Ar leads...

In this study, we have performed a thorough characterization of the GaN surface after etching up to 100 nm in Cl2 plasma under various bias voltages and according carrier wafer used (Si, SiO2, Si3N4, photoresist). The objective article is evaluate etch damage contamination when materials with other chemical nature are present during etching. effects conditions on morphology compositions etched films studied detail using XPS AFM measurements. To aim, universal methodology proposed estimate...

We report on a signal-to-noise ratio characterizing the generation of identical photon pairs more than 4 orders magnitude in ring resonator system. Parasitic noise, associated with single-pump spontaneous four-wave mixing, is essentially eliminated by employing novel system design involving two resonators that are linearly uncoupled but nonlinearly coupled. This opens way to new class integrated devices exploiting unique properties same optical mode.

This article demonstrates that a 10 nm isolated silicon pattern on very thin gate can be achieved if the plasma parameters and chemistry impact critical dimension (CD) control are well understood. The investigated passivation layers form sidewalls which directly CD control, nature of mask used during process (resist or SiO2 hard mask), charging effects developed when lands oxide.

Plasma etching is the most standard patterning technology used in micro- and nano-technologies. Chlorine-based plasmas are often for silicon etching. However, behavior of thin oxide exposed to such a plasma still not fully understood. In this paper, we investigate how layer on behaves when it Cl2 plasma. The authors show that chlorine atoms diffuse and/or Cl+ ions implanted through (<2.5 nm) oxide, leading formation SiClx interface between two layers Si SiO2. Chlorine accumulates at...

Patterning complex metal gate stack becomes increasingly challenging since the dimension for all isolated as well dense structures present on 300 mm wafer needs to be controlled within nanometer range. In this article, authors show that SF6/CH2F2/Ar plasma chemistries etch polysilicon very interesting critical (CD) control capabilities advanced strategies compared commonly used HBr/O2/Cl2 chemistries, thanks different mechanisms involved in passivation layer formation sidewalls. Indeed,...