A5061154771- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- ZnO doping and properties
- Plasma Diagnostics and Applications
- Metal and Thin Film Mechanics
- Nanowire Synthesis and Applications
- Advanced MEMS and NEMS Technologies
- Force Microscopy Techniques and Applications
- Advanced Sensor and Energy Harvesting Materials
- Mechanical and Optical Resonators
- Machine Learning in Materials Science
- Anodic Oxide Films and Nanostructures
Laboratoire des Technologies de la Microélectronique
2023-2024
Centre National de la Recherche Scientifique
2020-2024
CEA Grenoble
2024
CEA LETI
2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2024
Institut polytechnique de Grenoble
2020-2024
Université Grenoble Alpes
2020-2024
Laboratoire de Tribologie et Dynamique des Systèmes
2019-2020
Université Claude Bernard Lyon 1
2020
École Centrale de Lyon
2020
Piezoelectric semiconductor III-nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding further clarification of their piezoelectric behavior. Despite the feasibility piezoresponse force microscopy (PFM) to resolve piezoresponses at nanoscale, several difficulties arise when measurements are performed on low piezocoefficient materials due various artifacts. This work shows that...
The fabrication of organized AlN nanowires with well faceted m-sidewalls is demonstrated, exhibiting a narrow near-band-edge emission that confirms the high quality materials. In first step, top-down approach combining plasma etching process and subsequent wet KOH allows for strain-free nanopillars various densities diameters as small 250 nm m-oriented facets. second optimized overgrowth by MOVPE performed to recover hexagonal A growth model proposed fit evolution lateral rate function...
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