The specific dependence of the Si content on structural and optical properties O- H-free Si-rich nitride (SiNx>1.33) thin films deposited by magnetron sputtering is investigated. A semiempirical relation between composition refractive index was found. In absence Si-H, N-H, Si-O vibration modes in FTIR spectra, transverse longitudinal (TO-LO) Si-N stretching pair could be unambiguously identified using Berreman effect. With increasing content, LO TO bands shifted to lower wavenumbers, band...

A facile and rapid photochemical method for preparing supported silver nanoparticles (Ag-NPs) in a suspension of faujasite type (FAU) zeolite nanocrystals is described. Silver cations are introduced by ion exchange into the subsequently irradiated with Xe-Hg lamp (200 W) presence photoactive reducing agent (2-hydroxy-2-methylpropiophenone). UV-vis characterization indicates that irradiation time intensity (I0) influence significantly amount reduced. The full reduction takes place after 60 s...

Silicon-rich (SR)/SiO2 multilayered systems were produced by reactive magnetron sputtering, through an approach based on the ability of hydrogen, when alternatively mixed to argon plasma, reduce oxygen originated from SiO2 target. Optimum values both hydrogen partial pressure (45 mTorr) and deposition temperature (500 °C) have led highest incorporation Si in SR layer which crystallizes after annealing. The SR/SiO2 superlattices grown with such conditions showed that size nanocrystals is...

The present article deals with the optimized processing conditions leading to highest density of Si nanoclusters which play role sensitizing centers for nearby Er ions within a silica matrix. layers were obtained by reactive magnetron sputtering under plasma Ar mixed different rates hydrogen, and subsequently annealed at various temperatures. increase dilution degree hydrogen was found multiply nucleation sites whose foreshadows that formed upon annealing. Both content annealing temperature...

This paper investigates the interaction between Si nanoclusters (Si-nc) and Er in $\mathrm{Si}{\mathrm{O}}_{2}$, reports on optical characterization modeling of this system, attempts to clarify its effectiveness as a gain material for waveguide amplifiers at $1.54\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{m}$. Silicon-rich silicon oxide layers with an content $4--6\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}\mathrm{at.}∕{\mathrm{cm}}^{3}$ were deposited by...

CaF${}_{2}$ crystals as representatives of the class ionic nonamorphizable insulators were irradiated with many different swift heavy ions energy above 0.5 MeV/u providing a broad range electronic losses (${S}_{e}$). Beam-induced modifications characterized by Channeling Rutherford Backscattering Spectrometry (C-RBS) and x-ray diffraction (XRD), complemented transmission electron microscopy (TEM). Results from C-RBS give evidence significant damage appearing ${S}_{e}$ threshold 5...

Pump and probe experiments on Er3+ ions coupled to Si nanoclusters have been performed in rib-loaded waveguides investigate optical amplification at 1.5μm. Rib-loaded were obtained by photolithographic reactive ion etching of Er-doped silica layers containing grown sputtering. Insertion losses measurements the infrared erbium absorption region allowed gauge an cross section about 5×10−21cm2 1534nm. Signal transmission under pumping 1310nm shows confined carrier nanoclusters. Amplification...

Silicon carbide thin films have been deposited by reactive magnetron sputtering in a pure hydrogen plasma at substrate temperatures, Ts, ranging between 100 and 600 °C. The infrared (IR) absorption spectra the transmission electron microscopy observations reveal an onset of crystallization Ts as low 300 crystalline fraction increases with reaches value about 60% for Ts=600 Both refractive index n room temperature dark conductivity σd(RT) show quite consistent behaviors structural evolution...

This study reports the estimation of inverted Er fraction in a system doped silicon oxide sensitized by Si nanoclusters, made magnetron sputtering.Electroluminescence was obtained from erbium, with power efficiency 10 -2 %.By estimating density ions that are first excited state, we find up to 20% total concentration is best device, which one order magnitude higher than achieved optical pumping similar materials.

Three-dimensional imaging of silicon nanoclusters array in silicon-rich oxide layers was evidenced and studied. The atom probe tomography technique allows to give the composition interface with silica matrix. These results new insights for understanding properties Si-based photonic devices.

The influence of hydrogen rate on optical properties silicon nanocrystals deposited by sputtering method was studied means time-resolved photoluminescence spectroscopy as well transmission and reflection measurements. It found that decay is strongly non-single exponential can be described the stretched function. also shown effective probability density function may recovered Stehfest algorithm. Moreover, it proposed observed broadening obtained distributions reflects disorder in samples.

A high efficiency infrared quantum cutting effect in a Tb 3+ –Yb codoped silicon oxynitride system is demonstrated. The thin films are deposited on Si substrates by reactive magnetron co‐sputtering of target topped with 4 O 7 and Yb 2 3 chips under pure nitrogen plasma. photoluminescence dynamics investigated, revealing this at 980 nm up to 197% for the higher concentration. Thus, via cooperative transfer mechanism between , an absorbed UV–visible photon gives rise almost two emitted IR...

Si excess, Er content, and processing parameters have been optimized in a series of cosputtered oxide layers for maximizing emission lifetime. The amount excited as function the incident photon flux has quantified resonant (488nm) nonresonant (476nm) excitations. Results show that maximum 3.5% ions is excitable through nanoclusters (Si-nc). This low value cannot be explained only by cooperative upconversion and/or state absorption. A short range (0.5nm) distance dependent interaction model...

Si-rich-SiO2(SRSO)/SiO2 multilayers (MLs) have been grown by reactive magnetron sputtering. The presence of silicon nanoclusters (Si-ncls) within the SRSO sublayer and annealing temperature influence optical absorption as well photoluminescence. optimized has found to be 1100 °C, which allows recovery defects thus enhances Four MLs with Si-ncl size ranging from 1.5 8 nm annealed using conditions then studied transmission measurements. Optical modeled so that a effect in linear coefficient α...

We have studied the current transport and electroluminescence properties of metal oxide semiconductor (MOS) devices in which layer, is codoped with silicon nanoclusters erbium ions, made by magnetron sputtering. Electrical measurements allowed us to identify a Poole–Frenkel conduction mechanism. observe an important contribution Si films, no evidence Fowler–Nordheim tunneling. The results suggest that ions these layers generated energy transfer from nanoparticles. Finally, we report power...

Abstract The vanadate SrVO 3 is a transparent conductor perovskite with optical and electrical properties competing those of the most‐used indium tin oxide material. Although its charge density comparable to that metals, shows plasma frequency below visible range due strong electronic correlations characterizing transport in this material enhancing effective mass. Therefore, well‐known interplay between structure strongly correlated systems can be used such tune properties, as also depends...

A spectroscopic ellipsometry technique is used to attempt a quantitative analysis of thin Si/SiO2 nanocomposite films obtained by magnetron co-sputtering. The layers are first fabricated with varying values deposition temperature and sputtered silicon area, before being annealed at different temperatures. Using an effective medium model, the tool allowed estimate thickness volume fraction agglomerates or grains, in addition optical parameters layer through tentative determination dielectric...

Er-doped Si-rich silica layers were obtained by reactive magnetron sputtering and both structural room-temperature photoluminescence properties investigated. The controlled introduction of hydrogen in the plasma was found to play a critical role microstructure distribution Si nanograins formed after annealing. Concomitant density increase size decrease these mostly amorphous noticed upon increasing partial pressure plasma. This accompanied systematic enhancement Er emission indicating that...

Rib-loaded waveguides containing Er <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> -coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence of Si-nc strongly improves the efficiency xmlns:xlink="http://www.w3.org/1999/xlink">3+ </sup> excitation but may introduce loss mechanisms, such as Mie scattering and confined carrier absorption. Losses affect possibility obtaining positive gain....

A detailed study of the carrier absorption (CA) mechanism in multilayered silicon-nanocrystals (Si-nc) rib waveguides is reported. pump (532nm) and probe (1535nm) technique used to assess two loss mechanisms due optical excitation system: one characterized by slow (seconds) dynamics related heating other fast (microsecond) associated CA within Si-nc. losses increase with pumping flux up 6dB∕cm for 3×1020photons∕cm2s. By comparing temporal time resolved photoluminescence, we suggest that both...

: Photoluminescence spectroscopy and atom probe tomography were used to explore the optical activity microstructure of Er3+-doped Si-rich SiO2 thin films fabricated by radio-frequency magnetron sputtering. The effect post-fabrication annealing treatment on properties was investigated. evolution nanoscale structure upon an found control interrelation between radiative recombination carriers via Si clusters 4f shell transitions in Er3+ ions. most efficient 1.53-μm photoluminescence observed...

The combination of photonics and silicon technology is a great challenge because the potentiality coupling electronics optical functions on single chip. Silicon nanocrystals are promising in various areas especially for light-emitting functionality photovoltaic cells. This review describes recent achievements remaining challenges Si with emphasis perspectives nanoscale materials. Many results properties can be simulated understood based theoretical studies. However, some key questions like...