A5042948345- Silicon Nanostructures and Photoluminescence
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Metal and Thin Film Mechanics
- ZnO doping and properties
- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Nanowire Synthesis and Applications
- Analytical Chemistry and Sensors
- Electrochemical Analysis and Applications
- Chalcogenide Semiconductor Thin Films
- Nanoparticles: synthesis and applications
- solar cell performance optimization
- Advanced MEMS and NEMS Technologies
- Electrochemical sensors and biosensors
- Quantum Dots Synthesis And Properties
- Electrocatalysts for Energy Conversion
- Dielectric properties of ceramics
- Photonic and Optical Devices
- Ferroelectric and Piezoelectric Materials
- Electronic and Structural Properties of Oxides
- Semiconductor materials and interfaces
- Freshwater macroinvertebrate diversity and ecology
- Piezoelectric Actuators and Control
Université de Picardie Jules Verne
2004-2020
Laboratoire de physique de la matière condensée
2003-2016
Laboratoire de Physique Théorique de la Matière Condensée
2003-2012
Laboratoire de Glycochimie, des Antimicrobiens et des Agroressources
2003-2012
Centre de Recherche sur les Ions, les Matériaux et la Photonique
2010
Centre National de la Recherche Scientifique
1997-2007
Sorbonne Université
2007
Laboratoire de Cristallographie et Sciences des Matériaux
2000-2001
Laboratoire de Physique Corpusculaire de Caen
1998-1999
A spectroscopic ellipsometry technique is used to attempt a quantitative analysis of thin Si/SiO2 nanocomposite films obtained by magnetron co-sputtering. The layers are first fabricated with varying values deposition temperature and sputtered silicon area, before being annealed at different temperatures. Using an effective medium model, the tool allowed estimate thickness volume fraction agglomerates or grains, in addition optical parameters layer through tentative determination dielectric...
The photovoltaic performance (efficiency η) of an ITO/CdS/CdTe structure cell is studied in this article according to its electrical properties. study carried out by simulation with SCAPS (Solar Cell Capacitance Simulator) whose mathematical model based on solving the equations Poisson and continuity electrons holes. An conversion efficiency 23.58% obtained optimizing mobility (100 cm2/Vs), that holes (25 density (1015 cm-3), effective states conduction band (7.9 × 1017 cm-3) electronic...
Stoichiometry, bonding configurations and structural properties of plasma-deposited hydrogen-rich amorphous carbon nitride a-C1−xNx:H (0<x<0.20) films have been investigated using infrared Raman vibrational spectroscopies, along with x-ray photoemission spectroscopy at the C N K-edges. With increasing incorporation in a-C1−xNx:H, total H content decreases slightly C–H vibrations are progressively replaced by N–H vibrations. The dominant configuration is C=N throughout...
The analysis of the stress release and structural changes caused by postdeposition thermal annealing amorphous carbon nitride thin films (a-CNx) has been carried out. a-CNx were deposited on Si (100) using reactive radio frequency (rf) magnetron sputtering a high-purity graphite target in pure nitrogen plasma under various different rf powers. Combined Fourier transform infrared (FTIR), Raman spectroscopy, transmission photothermal deflexion residual measurements used to fully characterize...
The effect of annealing temperature (TA) on amorphous carbon nitride (a-CNx) thin films, deposited using radio-frequency (rf) magnetron sputtering technique a graphite target in pure nitrogen (N2) atmosphere at different rf power, is investigated. Film composition was analyzed Fourier transform infrared absorption (FTIR), Raman spectroscopy, optical transmission, and photothermal deflection spectroscopy (PDS) experiments. refractive index the mass density were determined transmission elastic...
The structure of nanocrystalline silicon thin films (nc-Si:H) deposited by rf magnetron sputtering a high-purity crystalline target using argon (30%) and hydrogen (70%) gas mixture, under different pressures (P = 2, 3 4 Pa) substrate temperature (Ts 100, 150 200 °C), has been studied with spectroscopic ellipsometry (SE; 1.5–5 eV) complemented Raman spectroscopy measurements. data were carefully analyzed the Bruggeman effective medium approximation Tauc–Lorentz model. results this...
Abstract Nitrogenous amorphous carbon (a‐CN x ) thin films were deposited by radio‐frequency cathodic magnetron sputtering (13.56 MHz) on polished and etched titanium disks. While these are cheaper to prepare than commonly reported carbon‐based electrodes, the usable electrochemical window in aqueous solution is within same range spans from −1.5 +1.8 V vs. SCE. The reactivity was tested using ferri‐ferrocyanide redox couple as a function of preparation parameters. obtained properties allow...
An optical wireless bistable micro-actuator is presented in this paper. The mechanism based on antagonistic pre-shaped double beams, which have the merits of simple pre-load operation and symmetrical output force. was fabricated with deep reactive ion etching (DRIE) technique using silicon insulator (SOI) wafer. beam has a thickness 25 μm depth 400 μm. stroke 300 8 thick compressive SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>...