A5087608352- Metal and Thin Film Mechanics
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Plasma Diagnostics and Applications
- Advanced materials and composites
- Thin-Film Transistor Technologies
- Boron and Carbon Nanomaterials Research
- GaN-based semiconductor devices and materials
- Copper Interconnects and Reliability
- ZnO doping and properties
- Corrosion Behavior and Inhibition
- Laser-induced spectroscopy and plasma
- Laser-Ablation Synthesis of Nanoparticles
- Carbon Nanotubes in Composites
- Silicon Nanostructures and Photoluminescence
- Electronic and Structural Properties of Oxides
- Anodic Oxide Films and Nanostructures
- Silicon Carbide Semiconductor Technologies
- Bone Tissue Engineering Materials
- High-Temperature Coating Behaviors
- Lubricants and Their Additives
- Transition Metal Oxide Nanomaterials
- Acoustic Wave Resonator Technologies
- Muon and positron interactions and applications
Universidad Nacional Autónoma de México
2015-2024
Instituto de Investigaciones en Ciencia y Tecnología de Materiales
1989-2024
Universidad Autónoma de la Ciudad de México
2017
Center for Research and Advanced Studies of the National Polytechnic Institute
1999
Instituto Nacional de Investigaciones Nucleares
1998
University of Cambridge
1997
Instituto Politécnico Nacional
1996
Lancaster University
1979-1980
Lancaster University Ghana
1980
Titanium‐Tantalum coatings are deposited by magnetron co‐sputtering technique, using independently driven titanium and tantalum targets. The effect of the Ta content on structure, mechanical, wear properties Ti films i s investigated . It is found that percentage added varies linearly from 3.7 to 31.3 at% increasing power applied target 10 100 W. XRD results show crystalline, there no evidence formation intermetallic phases, instead metastable phases α ″ β depending observed, though samples...
A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates up to 900 Å/min over a 4″ diameter and an independent control ion energy. ta-C:H was deposited using acetylene as gas characterized in terms its sp3 content, mass density, intrinsic stress, hydrogen C–H bonding, Raman spectra, optical gap, surface roughness friction coefficient. results obtained...