A5079266332- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- ZnO doping and properties
- Semiconductor materials and devices
- Nuclear Materials and Properties
- Ion-surface interactions and analysis
- Electronic and Structural Properties of Oxides
- GaN-based semiconductor devices and materials
- Gas Sensing Nanomaterials and Sensors
- Fusion materials and technologies
- High-Temperature Coating Behaviors
- Ga2O3 and related materials
- High-pressure geophysics and materials
- Hydrogen embrittlement and corrosion behaviors in metals
- Force Microscopy Techniques and Applications
- Copper-based nanomaterials and applications
- Chalcogenide Semiconductor Thin Films
- Advanced Surface Polishing Techniques
- High Temperature Alloys and Creep
- Corrosion Behavior and Inhibition
- Quantum Dots Synthesis And Properties
- Semiconductor Quantum Structures and Devices
- Advanced Materials Characterization Techniques
- Boron and Carbon Nanomaterials Research
- Metallurgical Processes and Thermodynamics
Centre National de la Recherche Scientifique
2014-2024
Groupe d’Étude de la Matière Condensée
2015-2024
Université de Versailles Saint-Quentin-en-Yvelines
2014-2024
Université Paris-Saclay
2015-2024
Tbilisi State University
2022
Institut Català de Nanociència i Nanotecnologia
2022
Universität für Weiterbildung Krems
2022
Gesellschaft für Mikroelektronikanwendung Chemnitz (Germany)
2017
Laboratoire de Cristallographie et Sciences des Matériaux
1999-2012
Laboratoire de physique des Solides
1999-2008
The electrical activity of nitrogen as an acceptor in ZnO has been investigated two ways. First, was introduced by means diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation the range 1016–1021 cm−3. This led to significant compensation natural donors with a minimum electron concentration 5×1014 Second, diffusion carried out on undoped MOVPE layers under high pressure conditions stemming from decomposition NH4NO3. Conversion p-type conductivity observed...
Unintentionally doped ZnO layers grown epitaxially on a sapphire substrate have been exposed either to hydrogen or deuterium plasma. Secondary ion mass spectroscopy measurements performed subsequently showed rapid diffusion of in these layers. Furthermore, the presence samples is found be responsible for nearly factor 3 increase free electron concentration. This effect attributed passivation compensating acceptor impurities present as-grown
Chromia layers are formed on many industrial alloys and act as a protective barrier against the corrosion of materials by limiting diffusion oxygen cations. Most these contain manganese an impurity, oxides often found at outer surface oxide films. In order to clarify oxidation mechanism check if chromia acts barrier, in was studied both polycrystals films Ni–30Cr alloy temperature range 700–1100°C pressure 10−4 atm. After deposition Mn diffusing treatment, penetration profiles were...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri, Z. Djebbour, J.-H. Ryou, Patriarche, L. Largeau, H. J. Kim, Lochner, K. Pantzas, D. Alamarguy, F. Jomard, R. Dupuis, J.-P. Salvestrini, P. Voss, Ougazzaden; Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet...
The value of the impurity-to-band activation energy EA a dopant is basic feature electrical conductivity semiconductors. Various techniques were used to determine in n-type diamond doped with phosphorus, giving values varying from 0.43 eV 0.63 eV, 0.6 being commonly accepted for ionization phosphorus donors diamond. Nevertheless, up now, dispersion experimental remains unexplained. In this work, we investigate properties set homoepitaxial films different concentrations by Hall effect...
Among wide bandgap semiconductors, diamond presents physical properties particularly suited for high performance power electronic devices. Growth and doping of chemical vapor deposited (CVD) have been mainly optimized in the conventional (100) crystal orientation, highly studied on (111) surfaces recently initiated (113). This last orientation seems very promising, as is shown intrinsic p-type doped diamonds. In this work, we report growth CVD phosphorus films (113)-oriented substrates. The...
Ultra-wide bandgap gallium oxide (∼5 eV) has emerged as a novel semiconductor platform for extending the current limits of power electronics and deep ultraviolet optoelectronics at predicted fraction cost. Finding effective acceptor dopant is hot issue. One element that quite often considered potential candidate zinc. A number experimental works have reported signature Zn-acceptor, but direct evidence hole conductivity was missing. In this work, p-type Zn-doped Ga2O3 thin films were grown by...
Abstract Homoepitaxial boron‐doped diamond layers grown by chemical vapor deposition on (100)‐oriented substrates are studied Hall effect and resistivity measurements as a function of the temperature. In range 140–600 K, hole concentration is well described neutrality equation in regime very low compensation, with characteristic E i /2 activation energy, where ionization energy boron acceptors. It indicates that residual donor extremely (<10 13 cm −3 ).
Tracer diffusion is one of most reliable techniques for providing basic kinetic data in solids. In the present review, selected direct methods, particular radiotracer measurements as a superior technique due to its high sensitivity, Secondary-Ion-Mass-Spectroscopy (SIMS) profiling, X-Ray Diffraction and Rutherford Backscattering Spectrometry are presented discussed. Special attention put on describing currently used sectioning detail with focus experimental applications complications. The...
A heterostructure of Ba$_{1-x}$Sr$_x$TiO$_3$/La$_{1.1}$Sr$_{0.9}$NiO$_3$ /SrTiO$_3$ has been analysed by magnetic sector secondary ion mass spectrometry (SIMS). The stoichiometry parameter $x$ the top layer was made varying continuously from 0 to 1 along width sample combinatorial pulsed laser deposition. Prior SIMS analysis, composition gradient Ba$_{1-x}$Sr$_x$TiO$_3$ quantitatively characterized chemical characterizations including wavelength and energy dispersive X-ray spectroscopies....
Abstract In this Letter, we present a significant advance in boron‐doped diamond material synthesis, with film resistivities reduced by almost two orders of magnitude respect to the reference data field for boron concentrations range from 1 × 10 18 3 19 cm –3 . The study is conducted on series homoepitaxial layers grown using microwave plasma assisted vapour phase epitaxy. electrical properties were obtained Hall effect measurements and conductivity probed van der Paw configuration at room...
For high power electronics, diamond is a promising semiconductor with phosphorus being the current substitutional donor. However, up to now, in (100) oriented grown diamond, only small fraction of atoms incorporated sites (&lt;30%) and epilayer surface exhibits macrosteps. In this work, we present phosphorus-doped where ∼100% are sites. The film low roughness (RMS = 0.5 nm). Our conductive (ρ 5.0 × 106 Ω · cm at 300 K) neutral detected infrared absorption.
Defects induced by boron doping in diamond layers were studied transmission electron microscopy. The existence of a critical level above which defects are generated is reported. This found to be dependent on the CH4/H2 molar ratios and growth directions. concentration lied 6.5–17.0 × 1020at/cm3 range ⟨111⟩ direction at 3.2 1021 at/cm3 for ⟨001⟩ one. Strain related effects shown not responsible. From location dislocations their Burger vectors, model proposed, together with generation mechanism.
We present the first study of thermal conductivity in superconducting SrTi$_{1-x}$Nb$_{x}$O$_{3}$, sufficiently doped to be near its maximum critical temperature. The bulk temperature, determined by jump specific heat, occurs at a significantly lower temperature than resistive T$_{c}$. Thermal conductivity, dominated electron contribution, deviates from normal-state magnitude T$_{c}$, following Bardeen-Rickayzen-Tewordt (BRT) behavior, expected for transport Bogoliubov excitations. Absence...
Nanocrystalline diamond (NCD) thin films were produced by chemical vapor deposition (CVD) and doped the addition of phosphine to gas mixture. The characterization focused on probing incorporation distribution phosphorus (P) dopants. Electron microscopy evaluated overall film morphology revealed interior structure nanosized grains. homogeneous with distinct grains featured a notably low sp2:sp3-ratio as confirmed Raman spectroscopy. High resolution spectroscopy methods demonstrated...