A5032836667- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Rare-earth and actinide compounds
- Semiconductor materials and devices
- High-pressure geophysics and materials
- Hydrogen Storage and Materials
- Electronic and Structural Properties of Oxides
- Ion-surface interactions and analysis
- Advanced Surface Polishing Techniques
- Nuclear Materials and Properties
- Magnetic Properties of Alloys
- Force Microscopy Techniques and Applications
- Inorganic Chemistry and Materials
- Advanced Fiber Laser Technologies
- Catalytic Processes in Materials Science
- Thermodynamic and Structural Properties of Metals and Alloys
- Magnetic and transport properties of perovskites and related materials
- Advanced Chemical Physics Studies
- Metallurgical and Alloy Processes
- Advanced Materials Characterization Techniques
- Advanced materials and composites
- Atomic and Subatomic Physics Research
- Intermetallics and Advanced Alloy Properties
- Laser-induced spectroscopy and plasma
- Catalysis and Oxidation Reactions
Laboratoire des Sciences des Procédés et des Matériaux
2015-2024
Université Sorbonne Paris Nord
2015-2024
Centre National de la Recherche Scientifique
2015-2024
Sorbonne Université
2020-2024
Sorbonne Paris Cité
2012-2020
Université Paris Cité
2011-2020
Université de Montpellier
2016
Laboratoire Charles Coulomb
2016
Groupe d’Étude de la Matière Condensée
2011
Université Paris-Sud
2007
The growth of monocrystalline diamond films electronic quality and large thickness (>few hundreds microns) is an important issue in particular for high-power electronics. In this paper, we will describe the different key parameters necessary to reach objective. First, examine deposition process establish that only microwave assisted plasma reactors can achieve optimal conditions efficient generation precursor species growth. Next, consider influence substrate orientation on epitaxial layer,...
Devices relying on microwave circuitry form a cornerstone of many classical and emerging quantum technologies. A capability to provide in-situ, noninvasive direct imaging the fields above such devices would be powerful tool for their function failure analysis. In this work, we build recent achievements in magnetometry using ensembles nitrogen vacancy centres diamond, present widefield microscope with few-micron resolution over millimeter-scale field view, 130nT/sqrt-Hz amplitude sensitivity,...
The ability to perform noninvasive, non-contact measurements of electric signals produced by action potentials is essential in biomedicine. A key method do this remotely sense the magnetic field they induce. Existing methods for sensing mammalian tissue, used techniques such as magnetoencephalography brain, require cryogenically cooled superconducting detectors. These have many disadvantages terms high cost, flexibility and limited portability well poor spatial temporal resolution. In work...
The nitrogen-vacancy (NV) centers in diamond are amongst the most promising candidates for quantum information applications. Up to now creation of such defects was highly probabilistic, requiring many copies nanodevice. Here we show that by employing a two step implantation process which includes low dose N2+ molecular ion implantations followed high C can increase generation efficiency NV over 50%. Moreover, detected intrinsic N14 concentration as 0.07 ppb converting nitrogen impurities...
We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced parallel by ion implantation through 80 nm diameter apertures patterned using electron beam lithography PMMA layer deposited on diamond surface. was performed with CN- molecules which increased NV defect formation yield. This could enable realization solid-state coupled-spin array and be used for positioning an optically active center photonic microstructure.
We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented substrate. More precisely, we demonstrate spontaneously generated NV are oriented with ∼97% probability along [111] axis, corresponding to most appealing among four possible crystallographic axes. Such nearly perfect preferential is explained by analyzing mechanism substrate and could extended other types defects. This work...
Abstract H 2 /O plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate surface prior chemical vapor deposition (CVD) growth. It allows removing defects induced on by polishing, thus leading an improved morphology and limiting stress within grown crystal. Moreover, they present advantage be performed in situ just before CVD In this work, were so that threading dislocations are etched preferentially, leaving typical etch‐pits. The...
In this work, we demonstrate initialization and readout of nuclear spins via a negatively charged silicon-vacancy (SiV) electron spin qubit. Under Hartmann-Hahn conditions the polarization is coherently transferred to spin. The observed fluorescence SiV. We also show that coherence time (6 ms) limited by spin-lattice relaxation due hyperfine coupling This work paves way towards realization building blocks quantum hardware with an efficient spin-photon interface based on SiV color center...
We demonstrate the fabrication of single-crystalline diamond nanopillars on a (111)-oriented chemical vapor deposited substrate. This crystal orientation offers optimal coupling nitrogen-vacancy (NV) center emission to nanopillar mode and is thus advantageous over previous approaches. characterize single native NV centers in these find one highest reported saturated fluorescence count rates crystalline excess 106 counts per second. show that our nano-fabrication procedure conserves...
A low-dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate-quality substrate hollowed out large square hole. Dislocations are found to propagate vertically and horizontally from the terminate at top surface or sides of hole, thus leaving central part with strongly reduced dislocation density.