A5030223076- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Neural Networks and Reservoir Computing
- Nanowire Synthesis and Applications
- Advanced Fiber Optic Sensors
Paul Scherrer Institute
2019-2022
ETH Zurich
2019-2022
CEA Grenoble
2019
CEA LETI
2019
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2019
Université Grenoble Alpes
2019
Board of the Swiss Federal Institutes of Technology
2019
Abstract Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and favourable band structure, which can be tuned by strain or alloying with Sn to become direct, it was found required interband semiconductor lasers. Here, we report lasing in the mid-infrared region (from λ = 3.20 μm up 3.66 μm) tensile strained Ge microbridges uniaxially loaded above 5.4% 5.9% upon optical pumping, differential quantum efficiency close 100%...
Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there two options. For many applications, based on III-V compounds provide compelling solutions, even if integration is complex therefore costly. However, where low costs also high density crucial, group-IV-based - made Ge GeSn, for example could be an alternative, provided their performance can improved. Such progresses will come with better materials but development...
Mid-Infrared lasing between 3.20 and 3.66 μ μm is achieved in undoped germanium microbridges strained up to 5.9 % a temperature of 100 K under optical pulsed excitation ps, exploiting nonequilibrium carrier dynamic.
Mid-Infrared lasing between 3.20 and 3.66 μm is achieved in undoped germanium microbridges strained up to 5.9 % a temperature of 100 K under optical pulsed excitation ps, exploiting non-equilibrium carrier dynamic.
Lasing in the Mid-Infrared region at 3.98 μm is achieved upon 2.15 continuous wave excitation undoped germanium microbridge strained 6.1 % low temperature, revealing a closed offset between G and L valleys.
The realization of a laser on silicon (Si) from group IV materials is long-cherished wish the semiconductor industry; it would enable mass production photonic systems at low cost. However, path towards an efficient light emitter requires material with direct band gap, in line all typical III-V lasers platforms [1]-[4]. Such configuration can be achieved by loading Ge tensile strain [5] alloying Sn [6] or both [7], [8]. Here, we demonstrate steady state lasing temperature strained germanium...