A5047058152- 2D Materials and Applications
- MXene and MAX Phase Materials
- GaN-based semiconductor devices and materials
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Molecular Junctions and Nanostructures
- Metal and Thin Film Mechanics
- Advanced Memory and Neural Computing
- Catalytic Cross-Coupling Reactions
- Acoustic Wave Resonator Technologies
- Axial and Atropisomeric Chirality Synthesis
- Perovskite Materials and Applications
- Electrocatalysts for Energy Conversion
- Electron and X-Ray Spectroscopy Techniques
- Chalcogenide Semiconductor Thin Films
- Catalytic Processes in Materials Science
- Catalytic C–H Functionalization Methods
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Quantum-Dot Cellular Automata
- Ferroelectric and Negative Capacitance Devices
- Copper-based nanomaterials and applications
- Nanocluster Synthesis and Applications
- Orthopaedic implants and arthroplasty
Université Grenoble Alpes
2017-2024
CEA LETI
2016-2024
Institut polytechnique de Grenoble
2016-2024
CEA Grenoble
2016-2024
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2016-2024
Université Claude Bernard Lyon 1
2014-2021
Laboratory of Chemistry, Catalysis, Polymers and Process
2021
Institut de Chimie
2021
HCL Technologies (India)
2021
Hôpital Edouard Herriot
2021
<italic>Highway to MOF Ni</italic><sub>2</sub><italic>(dhtp)!</italic> 1 hour in boiling water under atmospheric pressure; a cheap synthesis of the linker is also reported.
The lack of scalable-methods for the growth 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here two-step ALD route new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in layer-by-layer deposition amorphous surface Mo(iv) thiolate at 50 °C, followed by subsequent annealing higher temperature leading ultra-thin...
A general protocol for the copper-catalyzed decarboxylation of α,β-unsaturated carboxylic acids in PEG, particularly biosourced cinnamic acid analogues, is reported. Moderate to high isolated yields (31–96%) towards styrene derivatives were obtained. For first time, α-amino corresponding amines was successfully performed with good and extended a few condensed heterocyclic compounds. Both use PEG as green solvent direct separation pure product reaction by distillation permitted reuse Cu-based...
Abstract AlN-based acoustic filters are key devices in Radio Frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. ALD-grown 2D-MoS2 thin filmquality. can be used as a template to improve crystal. However, after deposition thick sputtered films (≥ 200nm), systematic delamination AlN/MoS2 stack appears, drastically limiting integration materials RF We propose new elaboration process grow with improved while avoiding...
Abstract Two-dimensional (2D) materials offer exceptional properties for microelectronics, yet scaling these technologies from laboratory research to industrial applications remains challenging. Processes growth, transfer, and fabrication require significant adaptation. Direct bonding transfer without polymer intermediaries are particularly attractive avoiding organic residues potential defects. This study demonstrates the of 2D MoS2 layers onto full 200 mm silicon wafers using direct...
Tungsten disulfide (WS2) monolayers are promising for next-generation flat electronics, but few scalable deposition methods currently available. Here, the authors report fabrication of tungsten through a novel two-step chemical vapor process involving an amorphous sulfide layer at relatively mild temperature from W(CO)6 and 1,2-ethanedithiol precursors, followed by short annealing 800 °C under inert atmosphere. This allows crystalline WS2 deposit with low thermal budget. Raman, x-ray...
The electrochemical splitting of water provides an elegant way to store renewable energy, but it is limited by the cost noble metals used as catalysts. Among catalysts for reduction hydrogen, MoS2 has been identified one most promising materials can be engineered provide not only a large surface area also abundance unsaturated and reactive coordination sites. Using Mo[NMe2]4 H2S precursors, desired thickness amorphous deposited on TiO2 nanotubes atomic layer deposition. identity structure...
In the pursuit of ultrathin and highly sensitive photodetectors, a promising approach involves leveraging combination light-sensitive two-dimensional (2D) semiconducting transition-metal dichalcogenides, such as MoS
Aluminum nitride (AlN)-based acoustic filters are key devices of radio-frequency communications. However, the performance electroacoustic resonators remains limited by crystalline quality piezoelectric AlN material. An innovative material strategy that combines different types materials (2D and 3D materials) growth techniques is presented here to enhance thick films grown on silicon-based substrates. Building upon previous works showing efficacy 2D MoS2 in sputtered-AlN texturing, this paper...
Abstract Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. work, different CMOS-compatible protocols developed for fabrication MoS 2 -based memristors, resulting performances compared. The quality at...
Aluminum nitride (AlN) is a wide bandgap material used in acoustic devices, piezo- micro-electromechanical system and promising for other electronic applications. However, most applications, the AlN crystalline quality obtained by PVD or MOCVD insufficient, suitable growth substrates providing an adapted lattice match coefficient of thermal expansion are limited. Alternatively, monocrystalline wafers not yet available 200/300 mm sizes suffer from high costs issues. Here, we propose novel...
A deep understanding of semiconductors-dielectrics interface properties will provide guidelines to optimize efficient passivation solutions for InGaN/GaN based μLED. To this end, the quantum wells (QW) semiconductor is tremendous interest since a lot surface recombinations are likely occur at LED active regions edges and probably responsible low μLED efficiencies. Thus we discuss in paper about X-ray photoemission (XPS) wavelength dispersive fluorescence (WDXRF) characterizations...
Transition metal dichalcogenides (TMDs) have received great attention over the past decade due to their wide range of optoelectronic properties and intrinsic compatibility with ultimately downsized devices (as ultrathin or even 2D layers), making them desirable for next-generation technologies. To obtain TMDs satisfying properties, very high process annealing temperatures are generally applied (above 550 °C), requiring a dedicated growth substrate followed by mechanical transfer TMD layer...
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates replace silicon in several technologies with enhanced performances. In this respect, the two remaining challenges are wafer scale growth of TMDs and their integration into operational devices using clean room compatible processes. work, different CMOS-compatible protocols developed for fabrication MoS$_2$-based memristors, resulting performances compared. The quality MoS$_2$ at...
A molybdenum disulfide coating deposited on a macroporous substrate as an electrocatalyst is mobile underlying amorphous tin dioxide substrate, but remains continuous and impervious to acidic conditions crystalline dioxide.