A5063941249- Semiconductor materials and devices
- Magnetic properties of thin films
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Metal and Thin Film Mechanics
- Electronic and Structural Properties of Oxides
- Phase-change materials and chalcogenides
- Magnetic Properties and Applications
- Glass properties and applications
- Thin-Film Transistor Technologies
- Acoustic Wave Resonator Technologies
- Ion-surface interactions and analysis
- Chalcogenide Semiconductor Thin Films
- Advanced Memory and Neural Computing
- Advancements in Photolithography Techniques
- Photorefractive and Nonlinear Optics
- Electron and X-Ray Spectroscopy Techniques
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Copper Interconnects and Reliability
- Ferroelectric and Piezoelectric Materials
- Magneto-Optical Properties and Applications
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
- Magnetic Properties of Alloys
CEA LETI
2009-2023
CEA Grenoble
2009-2023
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2009-2023
Université Grenoble Alpes
2007-2023
Institut polytechnique de Grenoble
2007-2023
Laboratoire des systèmes et applications des technologies de l'information et de l'énergie
2019
Service de Physique de l'État Condensé
2015
CEA Paris-Saclay
2015
Direction de la Recherche Technologique
1992-2002
Laboratoire des Technologies de la Microélectronique
1997
The commercialization of Phase-Change Memories (PCM), based on the well-known GST compound, have been recently started, tailored for consumer applications. Despite other excellent performances (i.e. low-power, scalability,...), data retention is assured up to 85°C, still limited automotive market segment. Alternative active material able comply with stringent requirements applications should possibly exhibit higher crystallization temperature (T <sub...
Abstract For a better understanding of the physical and electronic properties emissive carbon films, one best ways is to compare results obtained with several surface structural analysis techniques. In this article, different types film depositions for developing large flat panel displays by field emission are analysed correlated their emissivity. Pulse laser ablation high‐temperature plasma‐enhanced chemical vapour deposition (PECVD) films low‐temperature PECVD characterized XPS, Raman...
Multilayers alternating cobalt with different spacers such as iron and chromium at nanometric scale have been deposited by rf diode sputtering. The structures characterized in situ kinetic ellipsometry ex grazing x-ray reflection, diffraction, Auger profile analysis, transmission electron microscopy. Nuclear magnetic resonance (NMR) high-field SQUID magnetometry used to determine the properties. In Co/Fe multilayers structure strongly depends on thickness tCo. For tCo below 2 nm, layers...
From structural analysis by x-ray diffraction, Rutherford backscattering spectroscopy, and physical investigations (magnetization resistance), reactive sputtering assisted microwave multidipolar plasma appears to be a powerful means for tailoring the stoichiometry of transition metal nitrides. Reactive sputtered nitride Ni layers were elaborated while keeping Ar partial pressure constant (∼1.5 μbar) varying N2 in 0.1–0.5 μbar range. A mixing Ni2N Ni3N single-phase are stabilized thin high...
Result of measured N-content in test set Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>:N samples. XRF calibrated using a reference materials certified by IBA.
We are growing at CEA (i) high purity 28 Si layers and (ii) c-Ge/SiGe heterostructures for electron hole spin quantum bits. describe here strategies usable the fabrication of SOI substrates, with a focus on SiH 4 consumption minimization, as such gas is very expensive hard to come by. also properties 0.26 Ge 0.74 0.21 0.79 Virtual Substrates (VS) grown 850°C, 20 Torr forward ramping-up Si(001) substrates. After some chemical polishing (to remove surface cross-hatch), those VS used templates...
The quality of the interface between a HfO2 high-k gate dielectric and Si substrate directly influences its electrical properties. chemical composition interfacial region deposited on SiO2∕Si(100) by pulsed liquid injection metal organic vapor deposition at 430 550°C was investigated medium energy ion scattering, angular resolved x-ray photoemission spectroscopy analysis, high resolution transmission electron microscopy. It is shown that HfO2∕SiO2 abrupt with low roughness no silicate. SiO2...
The phase change from the amorphous to crystalline state which occurs upon thermal annealing in prototypical Ge 2 Sb Te 5 and nitrogen-doped phase-change-materials (PCM) thin films is studied by concomitant, complementary combined situ ex X-ray diffraction (XRD) reflectivity (XRR) techniques. It demonstrated that scattering techniques allow accurate investigation clarification of structural, morphological mechanical variations occurring crystallization. crystallization process correlated...
Magnesium fluoride thin films were deposited on silica glass and single crystal silicon substrates by argon ion-beam assisted deposition (IBAD). The effects of ions impinging the growing film optical chemical properties layers investigated. Compared to MgF2 produced direct electron-beam evaporation, obtained IBAD exhibited increased absorption refractive indices, fluorine depletion oxygen contamination. Optical data analyzed are discussed with regard composition films.
We have assessed, in 300mm Reduced Pressure – Chemical Vapour Deposition chambers from major suppliers, the advantages and drawbacks of disilane for low temperature growth Si SiGe. rates are, T < 575°C, approximately ten times higher with Si2H6 than SiH4, which are turn roughly SiH2Cl2. For given GeH4 precursor mass-flow ratios, lower Ge contents much SiGe obtained at 550°C, 20 Torr SiH4 especially Growth (Ge concentrations) SiH2Cl2 (slightly lower) Supplier A B chamber. The situation is...
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices.It still represents an open issue nowadays.Electric magnetic doping TMDC develop basic devices such as p-n junctions or diluted semiconductors for spintronic applications are also important field investigation.Here, we have developed two different techniques grow MoSe 2 mono-and multi-layers on SiO /Si...
The development of materials for industrial applications is in constant evolution. Regarding environmental or health laws, the use some restricted (lead-based). In this context, lithium niobate (LiNbO3) studied order to develop performances RF (radio frequency) (for instance, filters using bulk acoustic wave surface technology). deposition LiNbO3 mainly performed by chemical physical vapor and solgel techniques, resulting polycrystalline films with without a preferred orientation. For...
Tb/Fe and (Tb/Fe)/Si3N4 multilayer films with layers in the nanometric range have been prepared using a reactive diode rf sputtering system. Their structural magneto-optical properties investigated to determine stack parameters, crystallization states, direction of easy magnetization, Kerr angle values. The structure can be observed even when terbium are about 0.2 nm thick. Iron appears depend on layer thickness. For Tb thicknesses greater than 0.37 nm, iron is amorphous thinner 3 nm. It...
Quartz was implanted with titanium ions at high doses (up to 3.3×1017 cm−2). At low energy (40 keV), a highly conductive layer formed near the surface. The measured sheet resistance less than 100 Ω/⧠. implantation-induced changes in quartz were characterized using various methods such as cross-sectional transmission electron microscopy, Rutherford backscattering spectrometry, and x-ray photoelectron spectroscopy (XPS). As result of ion implantation, SiO2 dissociated. Metallic new chemical...
Engineering of chalcogenide phase-change materials at the nanoscale is required to improve performances ultimate size memory devices and reduce their power consumption.
We report on structural and magnetic properties of diode rf-sputtered fcc Cu/Co(100) multilayers. All the samples exhibit a pseudo-epitaxial structure with interface roughness order 6 Å. As Cu layer thickness is varied, we observe oscillations magnetoresistance corresponding to interlayer coupling. The maximum found for tCu=18.5 Å (up ΔR/R≊6%). furthermore measure very high differential (ΔR/RΔH=1.4 kOe−1). A combination antiferromagnetic coupling quadratic in-plane anisotropy responsible...
The high‐k metal gate (HKMG) film stacks introduced because 32 nm node of complementary oxide semiconductor (CMOS) is one major case where composition determination mandatory. In this work, two high‐resolution chemical depth profiling characterization techniques, the parallel angle‐resolved X‐ray photoelectron spectroscopy (pARXPS) and medium energy ion scattering (MEIS), are used to determine with accuracy HfON/SiON (high‐k/interfacial layer) stack from 14 technology. pARXPS measurements...