A5056527039- Electron and X-Ray Spectroscopy Techniques
- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Surface and Thin Film Phenomena
- Semiconductor materials and devices
- Photocathodes and Microchannel Plates
- Particle Accelerators and Free-Electron Lasers
- Silicon and Solar Cell Technologies
- Anodic Oxide Films and Nanostructures
- Semiconductor materials and interfaces
- Advanced Materials Characterization Techniques
- X-ray Spectroscopy and Fluorescence Analysis
- Corrosion Behavior and Inhibition
- Particle accelerators and beam dynamics
- Advanced Chemical Physics Studies
- Copper Interconnects and Reliability
- Electronic and Structural Properties of Oxides
- Metal and Thin Film Mechanics
- nanoparticles nucleation surface interactions
- Aluminum Alloy Microstructure Properties
- Catalytic Processes in Materials Science
- Magnetic properties of thin films
- Gyrotron and Vacuum Electronics Research
- X-ray Diffraction in Crystallography
- Surface Chemistry and Catalysis
Daresbury Laboratory
2015-2024
Sci-Tech Daresbury
2009-2024
Cockcroft Institute
2015-2024
Science and Technology Facilities Council
2010-2023
University of Liverpool
2001-2022
Institute of Semiconductor Physics
2017-2022
Novosibirsk State University
2017-2022
Imperial College London
2020
Karlsruhe Institute of Technology
2016
École Polytechnique Fédérale de Lausanne
2016
New acceleration technology is mandatory for the future elucidation of fundamental particles and their interactions. A promising approach to exploit properties plasmas. Past research has focused on creating large-amplitude plasma waves by injecting an intense laser pulse or electron bunch into plasma. However, maximum energy gain electrons accelerated in a single stage limited driver. Proton bunches are most drivers wakefields accelerate TeV scale stage. An experimental program at CERN—the...
High dielectric constant hafnium oxide films were formed by electron beam (e-beam) evaporation on HF last terminated silicon (100) wafers. We report the influence of low energy argon plasma (∼70 eV) and oxygen flow rate electrical, chemical, structural properties metal-insulator-silicon structures incorporating these e-beam deposited HfO2 films. The use film-densifying during deposition results in an increase equivalent thickness (EOT) values. employ high resolution transmission microscopy...
A number of surface reconstructions formed on InSb(100) have been observed with atomic resolution using scanning tunneling microscopy (STM). Cycles low-energy ion bombardment and annealing result in the formation an In-rich a c(8\ifmmode\times\else\texttimes\fi{}2) diffraction pattern. Filled-states images this indicate (4\ifmmode\times\else\texttimes\fi{}1) periodicity arising from imaging occupied lone-pair orbitals exposed second-layer Sb atoms. The controlled deposition...
A method to accurately determine the sputter yield of matrix from earliest stages a profile is described. Using technique medium-energy ion-scattering spectroscopy, this provides data that enable depth scale be established subnanometer depths onward. It may adapted samples containing thin amorphous surface layer (e.g., preamorphized shallow implant) or crystalline surfaces heavy-element marker layer. In Brief Report we have used interpret near-surface using erosion-rate obtained 1-keV boron...
Abstract Barrier‐type anodic films 3–15 nm thick have been formed on electropolished 99.999% aluminium. Variable‐angle XPS has used to identify a significant proportion of hydroxyl ions at the surface relatively compact alumina films. The location an oxygen‐rich region outer oxide confirmed by medium‐energy ion scattering (MEIS). Combining information from these two techniques leads conclusion that hydroxyl‐containing is responsible for this layer, MEIS revealing approximately linear...
The structure of the $\mathrm{Ni}(111)(\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3})R30\ifmmode^\circ\else\textdegree\fi{}\ensuremath{-}\mathrm{Pb}$ surface phase formed by a nominal $\frac{1}{3}$ monolayer Pb has been investigated medium-energy ion scattering using 100 keV ${\mathrm{H}}^{+}$ ions in three different incidence directions. results show clearly that atoms occupy fcc hollow sites at surface, but also favor which these are surrounded Ni to form alloy phase. A with stacking...
The substitutional surface alloy phases and have been investigated by medium-energy ion scattering (MEIS) using 100 keV ions. Blocking patterns in the scattered yield measured for incidence geometries. Simulations of these blocking performed a range trial structures optimum values structural parameters obtained are compared with those available from earlier low-energy electron diffraction (LEED) photoelectron (PhD) investigations. MEIS results confirm presence rumpling outermost layer,...
High depth resolution medium energy ion scattering (MEIS) has been used to examine the influence of dynamic defect annealing on damage formed in silicon substrates irradiated with ultralow ions (1 keV B+, 2.5 As+). Samples were implanted doses ranging from 3×1014 2×1016 cm−2 at sample temperatures −150/−120, 25, and 300 °C. For all examined, B implantation 25 °C produced a near-surface disordered layer 3–4 nm thick. above 1×1015 cm−2, second, deeper damaged was resolved greater than peak...
Complementary but independent medium-energy and low-energy ion scattering studies of the (0001) surfaces V(2)O(3) films grown on Pd(111), Au(111) Cu(3)Au(100) reveal a reconstructed full O(3)-layer termination creating VO(2) surface trilayer. This structure is fully consistent with previous calculations based thermodynamic equilibrium at during growth, contrasts suggestions that comprises complete monolayer vanadyl (V=O) species.
The compact linear accelerator for research and applications (CLARA) is an ultrabright electron beam test facility being developed at STFC Daresbury Laboratory. ultimate aim of CLARA to advanced free laser (FEL) schemes that can later be implemented on existing future short-wavelength FELs. In addition, a unique provide high-quality novel concepts ideas in wide range disciplines function as technology demonstrator United Kingdom x-ray FEL facility. built three phases; the first phase, or...
Using Al-Cu alloys, containing between 0.1 and 26 atom % Cu, deposited by magnetron sputtering etching in sodium hydroxide solution, enrichments of copper have been developed selectively the alloys. Rutherford backscattering spectroscopy medium energy ion scattering quantified their locations just beneath alumina-based oxides remaining from etching. In some cases, enrichment was sufficient for oxidation to take place; other it not, so that only aluminum oxidized, with being confined alloy,...
Ultrathin high-k layers such as hafnium oxide (HfO2) in combination with a subnanometer SiO2 or Hf silicate have emerged Si compatible gate dielectric materials. Medium energy ion scattering (MEIS) analysis has been carried out on range of metal chemical vapor deposition grown HfO2∕SiO2 and HfSiOx(60%Hf)∕SiO2 films thickness between 1 2nm Si(100), before after decoupled plasma nitridation (DPN). The ability MEIS spectrum simulation to provide quantitative layer information resolution is...
The (Cs,O)-activation procedure for p-GaAs(Cs,O)-photocathodes was studied with the aim of demarcating domains validity two practical models layer: dipole layer (DL) model and heterojunction (HJ) model. To do this, photocathode activated far beyond normal maximum quantum efficiency, several parameters were measured periodically during this process. In doing so, data obtained enabled us to determine DL- HJ-models, define more precisely characteristic within both these thus reveal...
Bimetallic systems respond dynamically to the nature of gas phase in contact with surface. The development a surface analytical tool which probes layer by composition bimetallic covered an adsorbate would be great benefit understanding complex catalytic and corrosion processes. This paper examines critically possibility using medium energy ion scattering obtain such information. unique shadowing blocking capabilities this technique make it possible, principle, selectively illuminate integer...
$100\phantom{\rule{0.3em}{0ex}}\mathrm{keV}$ ${\mathrm{H}}^{+}$ medium-energy ion scattering has been applied to investigate the surface relaxations of clean rutile ${\mathrm{TiO}}_{2}(110)\text{\ensuremath{-}}(1\ifmmode\times\else\texttimes\fi{}1)$ structure. A set blocking curves in four different incident directions show clear differences between and bulk attributable relaxation. Optimized values relaxation parameters give best fit structure are generally quite good agreement with a...
Medium energy ion scattering (MEIS) has been used to measure at the monolayer scale strain profile of self-organized GaN quantum dots grown on (11–20) or a-plane AlN by molecular-beam epitaxy. By confronting MEIS results with a structural analysis carried out atomic force microscopy, it is established that anisotropic, i.e., fully elastic along [1–100] and combination plastic [0001]. High resolution transmission electron microscopy measurements reveal presence misfit dislocations 1/2 [0001]...