A5019478108- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Electron and X-Ray Spectroscopy Techniques
- Electronic and Structural Properties of Oxides
- Advanced Chemical Physics Studies
- Surface and Thin Film Phenomena
- Ion-surface interactions and analysis
- Australian History and Society
- Gas Sensing Nanomaterials and Sensors
- Advanced Semiconductor Detectors and Materials
- Catalytic Processes in Materials Science
- Metal and Thin Film Mechanics
- Copper-based nanomaterials and applications
- X-ray Spectroscopy and Fluorescence Analysis
- Chalcogenide Semiconductor Thin Films
- Integrated Circuits and Semiconductor Failure Analysis
- Glass properties and applications
- Quantum Dots Synthesis And Properties
- nanoparticles nucleation surface interactions
- Molecular Junctions and Nanostructures
- Sport and Mega-Event Impacts
- Mental Health Research Topics
University of Warwick
2010-2024
Deakin University
2016-2024
RMIT University
2017-2024
Victoria University
2011-2024
Victoria School of Management
2011-2024
Geelong Hospital
2021
MIT University
2019-2020
The University of Melbourne
1980-2020
Austin Health
2020
Peninsula Health
2020
The electronic structure of clean InN(0001) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy the conduction band electron plasmon excitations. An intrinsic surface accumulation layer is found to exist and explained in terms a particularly low Gamma-point minimum wurtzite InN. As result, Fermi level pinning high vicinity Gamma point, but near average midgap energy, produces charged donor-type states with associated downward bending. Semiclassical dielectric...
The bulk and surface electronic structure of ${\text{In}}_{2}{\text{O}}_{3}$ has proved controversial, prompting the current combined experimental theoretical investigation. band gap single-crystalline is determined as $2.93\ifmmode\pm\else\textpm\fi{}0.15$ $3.02\ifmmode\pm\else\textpm\fi{}0.15\text{ }\text{eV}$ for cubic bixbyite rhombohedral polymorphs, respectively. valence-band density states investigated from x-ray photoemission spectroscopy measurements density-functional theory...
Antibiotic resistance has made the treatment of biofilm-related infections challenging. As such, quest for next-generation antimicrobial technologies must focus on targeted therapies to which pathogenic bacteria cannot develop resistance. Stimuli-responsive represent an alternative technological due their capability delivering treatment. This study provides a proof-of-concept investigation into use magneto-responsive gallium-based liquid metal (LM) droplets as antibacterial materials, can...
Water is a unique solvent that ubiquitous in biology and present variety of solutions, mixtures, materials settings. It therefore forms the basis for all molecular dynamics simulations biological phenomena, as well many chemical, industrial, investigations. Over years, water models have been developed, it remains challenge to find single model accurately reproduces experimental properties simultaneously. Here, we report comprehensive comparison structural dynamic 30 commonly used 3-point,...
We present a simple alternative pathway to transform carbon dioxide perpetually stored solid carbon.
High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the of undoped single-crystalline In2O3. From a combination measurements performed on heavily Sn-doped samples, charge neutrality level is shown lie approximately 0.4 eV above conduction band minimum in In2O3, explaining material, propensity for n-type conductivity, ease doping hence its...
The origin of electron accumulation at wurtzite InN surfaces is explained in terms the bulk band structure. Ab initio calculations electronic structure reveal an unusually low conduction minimum $\ensuremath{\Gamma}$-point. As a result, branch point energy, ${\mathrm{E}}_{B},$ which crossover from donor-type to acceptor-type surface states, located This allows states exist band. emit their electrons into band, thus giving rise surface. Experimental measurements, probing plasma, confirm...
The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, Hall effect measurements. Analysis simulation the optical data, including effects band nonparabolicity, Moss-Burstein filling renormalization, reveal room temperature values 2.16±0.02eV 0.21±0.01m0 respectively.
A new variant of the usual x-ray standing-wave experiment, scanning Bragg reflection in energy at normal incidence, is shown to be applicable metal crystals without special precautions being taken ensure high crystalline perfection. The structure Cu(111)(\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 )R30\ifmmode^\circ\else\textdegree\fi{}-Cl chemisorption phase found compatible with results a previous surface extended x-ray-absorption fine and photoelectron...
Muonium, and by analogy hydrogen, is shown to form a shallow-donor state in ${\text{In}}_{2}{\text{O}}_{3}$ ${\text{SnO}}_{2}$. The paramagnetic charge stable below $\ensuremath{\sim}50\text{ }\text{K}$ $\ensuremath{\sim}30\text{ ${\text{SnO}}_{2}$ which, coupled with its extremely small effective hyperfine splitting both cases, allows identification as the state. This has important implications for controversial issue of origins conductivity transparent conducting oxides.
Abstract Two-dimensional piezotronics will benefit from the emergence of new crystals featuring high piezoelectric coefficients. Gallium phosphate (GaPO 4 ) is an archetypal material, which does not naturally crystallise in a stratified structure and hence cannot be exfoliated using conventional methods. Here, we report low-temperature liquid metal-based two-dimensional printing synthesis strategy to achieve this goal. We exfoliate surface print interfacial oxide layer gallium, followed by...
The valence-band density of states single-crystalline rock-salt CdO(001), wurtzite $c$-plane ZnO, and rock- salt MgO(001) are investigated by high-resolution x-ray photoemission spectroscopy. A classic two-peak structure is observed in the VB-DOS due to anion $2p$-dominated valence bands. Good agreement found between experimental results quasi-particle-corrected density-functional theory calculations. Occupied shallow semicore $d$ levels CdO ZnO. While these exhibit similar spectral features...
We report the synthesis of centimeter sized ultrathin GaN and InN. The relies on ammonolysis liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite nanosheets featured typical thicknesses 1.3 nm, an optical bandgap 3.5 eV a carrier mobility 21.5 cm2 V-1 s-1, while InN thickness 2.0 nm. deposited highly crystalline, grew along (001) direction only three unit cells. method provides scalable approach for integration 2D morphologies...
Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with tunable bandgap, displays properties superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics optoelectronics. However, the lack successful synthesis techniques to prepare large-area stoichiometric atomically SnS layers...