V. Muñoz‐Sanjosé

ORCID: 0000-0002-3482-6957
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About
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Research Areas
  • ZnO doping and properties
  • Chalcogenide Semiconductor Thin Films
  • Copper-based nanomaterials and applications
  • Quantum Dots Synthesis And Properties
  • Advanced Semiconductor Detectors and Materials
  • Gas Sensing Nanomaterials and Sensors
  • Solid-state spectroscopy and crystallography
  • Ga2O3 and related materials
  • Semiconductor Quantum Structures and Devices
  • Electronic and Structural Properties of Oxides
  • Perovskite Materials and Applications
  • Crystal Structures and Properties
  • High-pressure geophysics and materials
  • Phase-change materials and chalcogenides
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • nanoparticles nucleation surface interactions
  • Muon and positron interactions and applications
  • Advanced Chemical Physics Studies
  • GaN-based semiconductor devices and materials
  • Optical properties and cooling technologies in crystalline materials
  • Advanced Thermoelectric Materials and Devices
  • Plasmonic and Surface Plasmon Research
  • Electron and X-Ray Spectroscopy Techniques
  • Semiconductor materials and interfaces

Universitat de València
2015-2024

Geociencias Barcelona
2023

Consejo Superior de Investigaciones Científicas
2023

Institut de Ciència de Materials de Barcelona
2005-2014

University of Warwick
2011

University of St Andrews
2011

Devon Energy (Canada)
2008

Universidad de Murcia
2007

Centre National de la Recherche Scientifique
1998-2004

Université Claude Bernard Lyon 1
2004

Mixed halide perovskites are one of the promising candidates in developing solar cells and light-emitting diodes (LEDs), among other applications, because their tunable optical properties. Nonetheless, photoinduced phase segregation, by formation segregated Br-rich I-rich domains, limits overall applicability. We tracked segregation with increasing crystalline size CsPbBr3-x I x photoluminescence under continuous-wave laser irradiation (405 nm, 10 mW cm-2) observed occurrence from threshold...

10.1021/acsenergylett.8b02207 article EN publisher-specific-oa ACS Energy Letters 2018-11-27

The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, Hall effect measurements. Analysis simulation the optical data, including effects band nonparabolicity, Moss-Burstein filling renormalization, reveal room temperature values 2.16±0.02eV 0.21±0.01m0 respectively.

10.1063/1.2833269 article EN Applied Physics Letters 2008-01-14

The structural and vibrational properties of bismuth selenide (Bi${}_{2}$Se${}_{3}$) have been studied by means x-ray diffraction Raman scattering measurements up to 20 30 GPa, respectively. complemented with ab initio total-energy lattice dynamics calculations. Our experimental results evidence a phase transition from the low-pressure rhombohedral ($R$-3$m$) (\ensuremath{\alpha}-Bi${}_{2}$Se${}_{3}$) sixfold coordination for Bi monoclinic $C$2/$m$ structure...

10.1103/physrevb.84.184110 article EN Physical Review B 2011-11-28

The valence-band density of states single-crystalline rock-salt CdO(001), wurtzite $c$-plane ZnO, and rock- salt MgO(001) are investigated by high-resolution x-ray photoemission spectroscopy. A classic two-peak structure is observed in the VB-DOS due to anion $2p$-dominated valence bands. Good agreement found between experimental results quasi-particle-corrected density-functional theory calculations. Occupied shallow semicore $d$ levels CdO ZnO. While these exhibit similar spectral features...

10.1103/physrevb.79.205205 article EN Physical Review B 2009-05-12

We have investigated the cathodoluminescence (CL) emission and Raman spectra along individual ZnO nanorods grown by a catalyst-free method. The spatial correlation between CL defect related modes permits establishing correspondence non-radiative recombination centres (NRRCs) defects responsible for 275 cm−1 band. According to this relation, NRRCs in these are tentatively associated with complexes of zinc interstitials.

10.1088/0022-3727/46/23/235302 article EN Journal of Physics D Applied Physics 2013-05-17

We report an experimental and theoretical lattice dynamics study of bismuth telluride (Bi${}_{2}$Te${}_{3}$) up to 23 GPa together with the optical absorption reflection 10 GPa. The indirect bandgap low-pressure rhombohedral (R-3$m$) phase (\ensuremath{\alpha}-Bi${}_{2}$Te${}_{3}$) was observed decrease pressure at a rate \ensuremath{-}6 meV/GPa. In regard dynamics, Raman-active modes \ensuremath{\alpha}-Bi${}_{2}$Te${}_{3}$ were 7.4 dependence their frequency width provides evidence...

10.1103/physrevb.84.104112 article EN Physical Review B 2011-09-09

Falcipain-2 and falcipain-3 are papain-family cysteine proteases of the malaria parasite Plasmodium falciparum that responsible for host hemoglobin hydrolysis to provide amino acids protein synthesis. Different heteroarylnitrile derivatives were studied as potential falcipain inhibitors therefore antiparasitic lead compounds, with 5-substituted-2-cyanopyrimidine chemical class emerging most potent promising series. Through a sequential optimization process considering different positions...

10.1021/jm100556b article EN Journal of Medicinal Chemistry 2010-07-30

An energy gap between the valence and conduction band is defining property of a semiconductor, size plays crucial role in design semiconductor devices. We show that presence two-dimensional electron gas near to surface can significantly alter its through many-body effects caused by high density, resulting much smaller than bulk. Apart from reconciling number disparate previous experimental findings, results suggest an entirely new route spatially inhomogeneous band-gap engineering.

10.1103/physrevlett.104.256803 article EN Physical Review Letters 2010-06-24

Abstract Bi 2 Se 3 , Te and Sb are narrow bandgap semiconductors with tetradymite crystal structure (R‐3m) which have been extensively studied along their alloys due to promising operation as thermoelectric materials in the temperature range between 300 500 K. Studies on these layered increased tremendously last years since they recently predicted demonstrated behave 3D topological insulators. In particular, a number of high‐pressure studies done recent materials. this work we summarize main...

10.1002/pssb.201200672 article EN physica status solidi (b) 2013-04-01

Temperature-dependent optical absorption, Hall effect, and infrared reflectance measurements have been performed on as-grown post-growth annealed CdO films grown by metal organic vapor phase epitaxy sapphire substrates. The evolution of the absorption edge conduction electron plasmon energy with temperature has modeled, including effects arising from Burstein-Moss shift bandgap renormalization. zero-temperature fundamental direct band effective mass determined to be 2.31 ± 0.02 eV...

10.1063/1.4775691 article EN Applied Physics Letters 2013-01-14

Within the most mesmerizing materials in world of optoelectronics, mixed halide perovskites (MHPs) have been distinguished because tunability their optoelectronic properties, balancing both light-harvesting efficiency and charge extraction into highly efficient solar devices. This feature has drawn attention analogous hot topics as photocatalysis for carrying out more efficiently degradation organic compounds. However, photo-oxidation ability perovskite depends not only on its excellent...

10.1021/acsami.9b19374 article EN ACS Applied Materials & Interfaces 2019-12-05

We have designed a synthesis procedure to obtain Cs2SnCl6 nanocrystals (NCs) doped with metal ion(s) emit visible light. NCs Bi3+, Te4+ and Sb3+ ions emitted blue, yellow red light, respectively. In addition, simultaneously Bi3+ were synthesized in single run. Combination of both dopant together gives rise the white emission. The photoluminescence quantum yields emissions are up 26.5, 28, 16.6%, respectively under excitation at 350, 390, 370 nm. Pure white-light emission CIE chromaticity...

10.1039/d1nr06255g article EN cc-by-nc Nanoscale 2022-01-01

A nonlinear optical effect is shown to occur in gallium and indium selenides at photon energies of the order 1.5 eV. It corresponds transitions from a lower-energy valence band uppermost one when nonequilibrium degenerate hole gas created latter by laser pulse. This inter-valence-band transition allowed crystal symmetry. Its oscillator strength estimated through $f$-sum rule turns out be about two orders magnitude higher than that fundamental transition. The intensity this stronger pump...

10.1103/physrevb.56.4075 article EN Physical review. B, Condensed matter 1997-08-15

In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found be donors in $n$-type CdO. Using this as a model system, the electrical behaviors of dopants, semiconductors unified by single energy level, charge neutrality giving much insight into current materials allowing band-structure engineering scheme for obtaining desired custom electronic properties new compound semiconductors.

10.1103/physrevb.79.035203 article EN Physical Review B 2009-01-15

The electronic structure of well-ordered single-crystal thin films CdO(100) has been studied using angle-resolved photoemission spectroscopy. Quantized electron subbands are observed above the valence-band maximum. existence these states provides evidence an intrinsic accumulation space-charge layer near CdO surface, interpretation supported by coupled Poisson-Schr\"odinger calculations. origin result is discussed in terms bulk band calculated quasiparticle-corrected density-functional...

10.1103/physrevb.78.165127 article EN Physical Review B 2008-10-29

We present a lattice-dynamics study of rocksalt cadmium oxide (CdO). use Raman scattering to investigate series high-quality CdO epilayers grown on sapphire substrates by means metal-organic vapor phase epitaxy. Two main features are found dominate the spectra CdO: sharp peak at ∼265 cm−1 and broad feature ∼390 cm−1. To assign these other weaker second-order that appear in spectra, we have carried out an ab initio calculation phonon dispersion CdO. From calculated two-phonon density states...

10.1063/1.3357377 article EN Journal of Applied Physics 2010-03-15

Halide perovskites are revolutionizing the photovoltaic and optoelectronic fields with outstanding performances obtained in a remarkably short time. However, two major challenges remain: long-term stability Pb content, due to its toxicity. Despite great effort carried out substitute by less hazardous element, lead-free perovskite still remains more unstable than lead-containing presents lower performance as well. In this work, we demonstrate colloidal preparation of Cs–Pb–Sn–Br nanoparticles...

10.1021/acs.jpcc.8b02499 article EN publisher-specific-oa The Journal of Physical Chemistry C 2018-04-29

We demonstrate that the anomalous Raman bands found in bulk and 2D tellurides (selenides) correspond to clusters or precipitates of trigonal Te (Se) form nanosize microsize polycrystalline grains layers are segregated from samples.

10.1039/d1tc00980j article EN Journal of Materials Chemistry C 2021-01-01
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